公开(公告)号：US06362482B1

公开(公告)日：2002-03-26

申请号：US09154617

申请日：1998-09-16

Applicant: Roger Stettner ,  Howard W. Bailey

Inventor： Roger Stettner ,  Howard W. Bailey

IPC: G01T124

CPC classification number: G01T1/1644 ,  G01T1/2018 ,  G01T1/247 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50031 ,  H01J2231/50063 ,  H01J2231/50068 ,  H01J2231/5056 ,  H01L27/146 ,  H01L27/14625 ,  H01L27/148 ,  H01L2224/48137

Abstract: A device for the high-speed analysis of photon- or particle-generated image data or for the high-speed energy-discrimination analysis of photon- or particle-counting data. The device uses a sensor that collects the photons or particles on an array of solid state detectors, as electrical analog signals, and stores the analog-signal information on capacitors of readout arrays associated with the detector arrays. Integration of the photon or particle flux signals on the readout arrays proceeds for a given time frame and then image-related signals are transferred to an analog correction processor. The analog correction processor is comprised of one or more integrated circuit chips where each chip contains an array of correction processor unit cells. In these unit cells signals are corrected, in parallel, for gain and offset nonuniformities in the detection and processing chain. Corrections to all the signals are made in a time frame or less and the information is then transferred to an analog image processor. Particle-counting data is transferred directly from the readout array chips to the analog image processor. The analog image processor is comprised of one or more integrated circuit chips where each chip is made up of an array of image processor unit cells. Each unit cell contains circuitry for implementing an image processing or energy discrimination algorithm, and circuitry for outputting the signals and/or the position of only those unit cells for which the algorithm is satisfied. The analog image processor chip may also contain circuitry that counts the number of cells for which the algorithms have been satisfied. The analog image processor implements the algorithm and outputs the data in a time frame or less.

Abstract translation: 用于高速分析光子或粒子产生的图像数据或用于光子或粒子计数数据的高速能量鉴别分析的装置。 该装置使用将固态检测器阵列上的光子或粒子作为电气模拟信号收集的传感器，并将模拟信号信息存储在与检测器阵列相关联的读出阵列的电容器上。 光子或粒子通量信号在读出阵列上的集成在给定的时间帧上进行，然后将图像相关的信号传送到模拟校正处理器。 模拟校正处理器由一个或多个集成电路芯片组成，其中每个芯片包含校正处理器单元单元阵列。 在这些单元中，信号被并行校正，用于检测和处理链中的增益和偏移不均匀性。 所有信号的校正是在一个或多个时间帧内进行的，然后信息被传送到模拟图像处理器。 粒子计数数据直接从读出阵列芯片传送到模拟图像处理器。 模拟图像处理器由一个或多个集成电路芯片组成，其中每个芯片由图像处理器单元单元的阵列组成。 每个单位单元包括用于实现图像处理或能量鉴别算法的电路，以及仅输出算法满足的单位单元的信号和/或位置的电路​​。 模拟图像处理器芯片还可以包含对已经满足算法的单元数量进行计数的电路。 模拟图像处理器实现该算法并且在一个或多个时间帧内输出数据。

公开(公告)号：US5834791A

公开(公告)日：1998-11-10

申请号：US960592

申请日：1997-10-30

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01L29/20

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

公开(公告)号：US5747826A

公开(公告)日：1998-05-05

申请号：US671195

申请日：1996-06-27

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

IPC: H01J1/34 ,  H01L29/47

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

Abstract translation: 本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在 光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成 由形成在引线电极和一个表面之间的电场发射预定的极性电压。

公开(公告)号：US5684360A

公开(公告)日：1997-11-04

申请号：US499945

申请日：1995-07-10

Applicant: Aaron Wolf Baum ,  Kenneth A. Costello

Inventor： Aaron Wolf Baum ,  Kenneth A. Costello

IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J27/04 ,  H01J37/073 ,  H01J40/06

CPC classification number: G03F7/70375 ,  H01J27/04 ,  H01J3/021 ,  H01J37/073 ,  H01J2201/3423

Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

Abstract translation: 电子源包括透光性基板上的负电子亲合性光电阴极和光束发生器，用于将光束引导到光电阴极处的基板，用于将电子激发到导带中。 光电阴极具有用于发射尺寸小于约两微米的电子的至少一个有源面积。 电子源还包括用于将电子形成电子束的电子光学器件和用于将光电阴极保持在高真空的真空外壳。 在一个实施例中，光电阴极的有效发射面积由入射在光电阴极上的光束限定。 在另一个实施方案中，光电阴极的活性发射面积是通过光电阴极的表面改性预先确定的。 该光源从光电阴极的超小活性发射区提供非常高的亮度。

公开(公告)号：US5680007A

公开(公告)日：1997-10-21

申请号：US507985

申请日：1995-07-27

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

IPC: H01J1/34 ,  H01J43/08

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。 光电子在该电场加速度下获得能量，并且在电子发射层中被转变到更高能量级的导带，并且发射到真空中。

公开(公告)号：US5315127A

公开(公告)日：1994-05-24

申请号：US876579

申请日：1992-04-30

Applicant: Tsutmu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutmu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01L29/161

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.

Abstract translation: 一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高自旋极化电子束的半导体器件; 在第一化合物半导体层上与砷化镓GaAs形成的第二化合物半导体层，具有与第一晶格常数不同的第二晶格常数，第二化合物半导体层在接受光能时发射高度自旋极化的电子束 ; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t限定第一和第二晶格常数之间的失配量，使得失配的大小提供残余应变， εR在第二层中不小于2.0×10 -3。 砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了在重孔带 以及第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。

公开(公告)号：US5268570A

公开(公告)日：1993-12-07

申请号：US811781

申请日：1991-12-20

Applicant: Hyo-Sup Kim

Inventor： Hyo-Sup Kim

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01J31/50

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50015 ,  Y10S438/936

Abstract: An improved photocathode for use in a night vision system, comprising a glass face plate, an AlInAs window layer having an anti-reflection and protective coating bonded to the face plate, an InGaAs active layer epitaxially grown to the window layer, and a chrome electrode bonded to the face plate, the window layer, and the active layer providing an electrical contact between the photocathode and the night vision system, whereby an optical image illuminated into the face plate results in a corresponding electron pattern emitted from the active layer.

公开(公告)号：US4990766A

公开(公告)日：1991-02-05

申请号：US354714

申请日：1989-05-22

Applicant: Robert A. Simms ,  Charley B. Burgett

Inventor： Robert A. Simms ,  Charley B. Burgett

IPC: H01J1/304 ,  H01J1/34 ,  H01J31/50

CPC classification number: H01J1/3042 ,  H01J1/34 ,  H01J31/50 ,  H01J2201/319 ,  H01J2201/3423 ,  H01J2231/50026 ,  H01J2231/50036 ,  H01J2231/50042 ,  H01J2231/50063

Abstract: A microscopic voltage controlled field emission electron amplifier device consists of a dense array of field emission cathodes with individual cathode impedances employed to modulate and control the field emission currents of the device. These impedances are selected to be sensitive to an external stimulus such as light, x-rays, infrared radiation or particle bombardment; so that the field emission current varies spacially in proportion to the intensity of the controlling stimulus. When a phosphorus screen or other suitable responsive element is provided, the device functions as a solid state image convertor or intensifier.

Abstract translation: 微电压控制的场致发射电子放大器装置由致密阵列的场致发射阴极组成，具有单独的阴极阻抗，用于调制和控制器件的场发射电流。 这些阻抗被选择为对诸如光，x射线，红外辐射或粒子轰击的外部刺激敏感; 使得场致发射电流与控制刺激的强度成比例地变化。 当提供磷屏或其它合适的响应元件时，该装置用作固态图像转换器或增强器。

公开(公告)号：US4906894A

公开(公告)日：1990-03-06

申请号：US331007

申请日：1989-03-28

Applicant: Mamoru Miyawaki ,  Yukio Masuda ,  Ryuichi Arai ,  Nobutoshi Mizusawa ,  Takahiko Ishiwatari ,  Hitoshi Oda

Inventor： Mamoru Miyawaki ,  Yukio Masuda ,  Ryuichi Arai ,  Nobutoshi Mizusawa ,  Takahiko Ishiwatari ,  Hitoshi Oda

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoelectron beam converting device including a semiconductor substrate having a p-n junction formed between an n-type region and a p-type region and an opening portion formed on the side of the semiconductor substrate. An electron beam is generated by a light which enters from the opening portion and by a reverse voltage to be applied to the p-n junction.

Abstract translation: 一种光电子束转换装置，包括在n型区域和p型区域之间形成有p-n结的半导体衬底和形成在半导体衬底的侧面上的开口部分。 电子束由从开口部分进入的光和由p-n结施加的反向电压产生。

公开(公告)号：US4736135A

公开(公告)日：1988-04-05

申请号：US875801

申请日：1986-06-18

Applicant: Jan Zwier ,  Johannes H. A. Vasterink ,  Johannes Van Esdonk

Inventor： Jan Zwier ,  Johannes H. A. Vasterink ,  Johannes Van Esdonk

IPC: H01J1/304 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J3/02 ,  H01J1/13 ,  H01J5/02

CPC classification number: H01J1/32 ,  H01J1/308 ,  H01J1/34 ,  H01J3/02 ,  H01J2201/3423

Abstract: In order to improve the stability of a cold cathode (5) of the reverse biased junction type, a vacuum space (2) is coupled with a reservoir (10), within which a source (21) of material reducing the work function, for example caesium, is present. By influencing the vapor pressure and the temperature in component parts (13, 16) of the reservoir (10) and in the source (21), loss of caesium due to adsorption or other phenomena occurring at the emitting surface (8) of the cathode (5) can be compensated for by an incident flow of caesium (25).

Abstract translation: 为了提高反向偏置接合型的冷阴极（5）的稳定性，真空空间（2）与储存器（10）联接，在该储存器内部将减少功函数的材料源（21）用于 例如铯，存在。 通过影响储存器（10）和源（21）的部件（13,16）中的蒸汽压力和温度，由于在阴极的发射表面（8）处发生的吸附或其它现象引起的铯的损失 （5）可以通过铯（25）的入射流补偿。