ION SOURCE FOR TIME-OF-FLIGHT MASS SPECTROMETERS FOR ANALYZING GAS SAMPLES
    4.
    发明申请
    ION SOURCE FOR TIME-OF-FLIGHT MASS SPECTROMETERS FOR ANALYZING GAS SAMPLES 失效
    用于分析气体样品的飞行时间质谱仪的离子源

    公开(公告)号:US20030057378A1

    公开(公告)日:2003-03-27

    申请号:US09550171

    申请日:2000-04-14

    CPC classification number: H01J27/04 H01J43/246 H01J49/08 H01J49/147

    Abstract: In accordance with the invention, the ion source of a time-of-flight mass spectrometer includes an electron gun having an electron source and at least one electrode for conditioning the flow of electrons, followed by at least one microchannel wafer for generating a pulsed secondary electron beam containing a greater number of electrons from a pulsed primary electron beam. The secondary electron beam enters a gas ionization area of an ion gun which produces a flow of ions which is then passed through the flight tube in order to be analyzed by an ion detector. This provides a high-performance ion source which is compact, sensitive and easy to integrate.

    Abstract translation: 根据本发明,飞行时间质谱仪的离子源包括具有电子源的电子枪和用于调节电子流的至少一个电极,随后是用于产生脉冲次级的至少一个微通道晶片 电子束包含来自脉冲一次电子束的更多数量的电子。 二次电子束进入离子枪的气体离子化区域,其产生离子流,然后将其流过飞行管,以便通过离子检测器进行分析。 这提供了一种高性能的离子源,它是紧凑,灵敏和容易集成的。

    Gaseous ion source feed for oxygen ion implantation
    5.
    发明申请
    Gaseous ion source feed for oxygen ion implantation 失效
    用于氧离子注入的气态离子源进料

    公开(公告)号:US20020166975A1

    公开(公告)日:2002-11-14

    申请号:US10139411

    申请日:2002-05-06

    Inventor: Jaime M. Reyes

    CPC classification number: H01J27/04 H01J37/08 H01J2237/31701

    Abstract: Methods and apparatus are provided for generating oxygen ions in an ion source having an arc chamber containing at least one oxidizable metal. The method includes the steps of feeding gaseous H2O into the arc chamber and operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.

    Abstract translation: 提供了用于在具有包含至少一种可氧化金属的电弧室的离子源中产生氧离子的方法和装置。 该方法包括以下步骤:在气体H 2 O的形成自由能小于可氧化金属的氧化物的自由能的温度范围内将气态H 2 O供入到电弧室中并操作电弧室。

    Ion generation chamber
    6.
    发明申请
    Ion generation chamber 有权
    离子发生室

    公开(公告)号:US20020117637A1

    公开(公告)日:2002-08-29

    申请号:US09796194

    申请日:2001-02-28

    CPC classification number: H01J27/04 H01J37/08 H01J2237/31701

    Abstract: An ion generator chamber, for an implantation apparatus, having its interior walls surfaces knurled or roughened so that any of the materials used in the chamber cannot deposit onto the interior wall surfaces in a size sufficiently large enough to adversely affect the operation of the chamber, if the deposits peel off the interior walls of the chamber. By limiting the size of any deposits on interior chamber walls, the invention extends the average life of the filaments used in the chamber as well as extending the average time between any necessary cleaning of the inner chamber walls thereby extending the operating life of the chamber.

    Abstract translation: 一种用于植入装置的离子发生器室,其内壁表面滚花或粗糙化,使得在室中使用的任何材料不能以足够大的尺寸沉积到内壁表面上,从而不利地影响室的操作, 如果沉积物从室的内壁剥离。 通过限制内部室壁上的任何沉积物的尺寸,本发明延长了室中使用的长丝的平均寿命,并且延长了在内室壁的任何必要的清洁之间的平均时间,从而延长了室的使用寿命。

    Plasma gun and methods for the use thereof

    公开(公告)号:US06300720B1

    公开(公告)日:2001-10-09

    申请号:US09283135

    申请日:1999-03-31

    Applicant: Daniel Birx

    Inventor: Daniel Birx

    CPC classification number: H05H1/54 F03H1/0087 H01J27/04 H05G2/003 H05G2/005

    Abstract: A high pulse repetition frequency (PRF) plasma gun is provided, which gun inlets a selected propellant gas into a column formed between a center electrode and a coaxial outer electrode, utilizes a solid state high repetition rate pulse driver to provide a voltage across the electrodes and provides a plasma initiator at the base of the column, which is normally operative when the driver is fully charged. For preferred embodiments, the initiator includes a sold state simulated RF driver, the outputs from which are applied to electrodes affixed in an insulator and producing a high voltage field at a surface of the insulator which forms part of the base end of the column. The plasma expands from the base end of the column and off the exit end thereof. When used as a thruster, for example in space applications, the driver voltage and electrode lengths are selected such that the plasma for each pulse exits the column at approximately the same time the voltage across the electrodes reaches zero, thereby maximizing the thrust. When used as a radiation source, the voltage and electrode length are selected such that the plasma exits the column when the current is maximum. The plasma is magnetically pinched as it exits the, column, thereby raising the plasma temperature, energizing an element in fluid state applied to the pinch, for example through the center electrode, to provide radiation at a desired wavelength. The element may also be applied to the pinch by forming at least one of the center and outer electrodes of a sintered powder refractory metal, the element in fluid form being wicked into the electrode. The plasm gun parameters can be selected to achieve a desired wavelength, which may for example be within the EUV or VUV band. The pulse driver preferably provides a high voltage spike followed by a lower voltage, longer duration sustainer signal, most of the driver energy being provided by the sustainer signal. The plasma gun of this invention, which is capable of operating at PRFs in the range of approximately 100 Hz to in excess of 5,000 Hz, may also be used in other applications.

    Boron ion sources for ion implantation apparatus
    8.
    发明授权
    Boron ion sources for ion implantation apparatus 失效
    用于离子注入装置的硼离子源

    公开(公告)号:US5977552A

    公开(公告)日:1999-11-02

    申请号:US990323

    申请日:1997-12-11

    Applicant: Majeed A. Foad

    Inventor: Majeed A. Foad

    CPC classification number: H01J27/04 H01J2237/31701

    Abstract: In an efficient ion source BF.sub.3 gas is first passed over solid boron heated in an oven to at least 1100.degree. C. to reduce the BF.sub.3 to BF molecules. It is also proposed to use solid boron as feed stock by heating this in an oven to at least 1800.degree. C. to produce boron vapour. Either a reactive gas such as fluorine or an inert gas such as Argon is also introduced into the arc chamber to react with or sputter off boron condensing on the arc chamber walls.

    Abstract translation: 在有效的离子源中,BF 3气体首先通过在烘箱中加热至1100℃以上的固体硼,以将BF 3还原成BF分子。 还提出使用固体硼作为原料,通过在烘箱中将其加热到至少1800℃以产生硼蒸气。 诸如氟或惰性气体如氩气的反应性气体也被引入电弧室中以与在电弧室壁上凝结的硼反应或溅射掉。

    Metal ion plasma generator having magnetic field forming device located
such that a triggering is between the magnetic field forming device and
an anode
    9.
    发明授权
    Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode 失效
    具有磁场形成装置的金属离子等离子体发生器,其定位成使得在磁场形成装置和阳极之间触发

    公开(公告)号:US5896012A

    公开(公告)日:1999-04-20

    申请号:US908985

    申请日:1997-08-08

    CPC classification number: H01J37/32055 C23C14/325 H01J27/04 H01J37/3266

    Abstract: When a trigger discharge between a metal cathode and a trigger ring induces a vacuum-arc discharge between the cathode an anode, which vaporizes the substances of the cathode surface to produce a metal ion plasma, setting the pulse length of the arc pulse applied between the cathode and the anode to 1 msec or longer will soon short-circuit between the cathode and the trigger ring due to the vaporized substances deposited on the surface of the insulating ring. In order to solve this problem, a permanent magnet 36 for forming a magnetic field across a space between the anode 26 and the cathode 34 is provided close to the rear side of the trigger ring 35 so as to guide the substances vaporized from the cathode 34 toward the anode 26. Thereby, a longer continuous operation can be done with setting the arc pulse longer. moreover, since the permanent magnet 36 is provided at the foregoing position, the magnet does not receive a thermal load by the vacuum-arc discharge, which maintains a stable operation and makes the total construction compact.

    Abstract translation: 当金属阴极和触发环之间的触发放电在阴极和阴极表面的物质蒸发以产生金属离子等离子体的阴极之间引起真空电弧放电时,设置施加在金属阴极和触发环之间的电弧脉冲的脉冲长度 阴极和阳极至1毫秒或更长时间将由于沉积在绝缘环表面上的汽化物质而在阴极和触发环之间短路。 为了解决这个问题,在触发环35的后侧附近设置用于在阳极26和阴极34之间的空间形成磁场的永磁体36,以引导从阴极34蒸发的物质 从而可以通过更长时间地设置电弧脉冲来进行更长的连续操作。 此外,由于永久磁铁36设置在上述位置,所以磁体不会受到真空电弧放电的热负荷的影响,从而保持了稳定的动作,使总体结构紧凑。

    Single potential ion source
    10.
    发明授权
    Single potential ion source 失效
    单电位离子源

    公开(公告)号:US5600136A

    公开(公告)日:1997-02-04

    申请号:US474593

    申请日:1995-06-07

    CPC classification number: H01J27/04 H01J49/16

    Abstract: A single potential ion source includes a single conical electrode encircled by a cylindrical magnet. At least one filament is placed proximate to the electrode. This arrangement serves to accelerate electrons created by energy from the filament toward a center axis of the conical electrode. The electrons collide with gas particles to create a focused ion stream. The stream may be directed into a magnetic field in a mass spectrometer tube.

    Abstract translation: 单个电位离子源包括由圆柱形磁体包围的单个圆锥形电极。 至少一根细丝放置在电极附近。 这种布置用于加速从细丝向锥形电极的中心轴产生的能量。 电子与气体颗粒碰撞以产生聚焦离子流。 流可以被引导到质谱管中的磁场中。

Patent Agency Ranking