ELECTRICAL POWER CONTROL OF A FIELD EMISSION LIGHTING SYSTEM
    121.
    发明申请
    ELECTRICAL POWER CONTROL OF A FIELD EMISSION LIGHTING SYSTEM 有权
    场发射照明系统的电力控制

    公开(公告)号:US20140062335A1

    公开(公告)日:2014-03-06

    申请号:US13989200

    申请日:2011-12-07

    Applicant: Qiu-Hong Hu

    Inventor: Qiu-Hong Hu

    Abstract: The present invention relates to a field emission lighting arrangement, comprising an anode structure at least partly covered by a phosphor layer, an evacuated envelope inside of which an anode structure is arranged, and a field emission cathode, wherein the field emission lighting arrangement is configured to receive a drive signal for powering the field emission lighting arrangement and to sequentially activate selected portions of the phosphor layer for emitting light. The same control regime may be applied to an arrangement comprising a plurality of field emission cathodes and a single field emission anode. Advantages with the invention includes increase lifetime of the field emission lighting arrangement.

    Abstract translation: 本发明涉及一种场发射照明装置,其包括至少部分地被荧光体层覆盖的阳极结构,其中布置有阳极结构的真空外壳和场发射阴极,其中,所述场发射照明装置被配置 以接收用于为场发射照明装置提供动力的驱动信号,并且依次激活用于发射光的磷光体层的选定部分。 相同的控制方式可以应用于包括多个场致发射阴极和单场发射阳极的装置。 本发明的优点包括增加场发射照明装置的寿命。

    LIGHT SOURCE
    122.
    发明申请
    LIGHT SOURCE 有权
    光源

    公开(公告)号:US20130215618A1

    公开(公告)日:2013-08-22

    申请号:US13877361

    申请日:2011-08-17

    Inventor: Shigeki Matsuura

    CPC classification number: F21V7/043 H01J61/025 H01J63/04 H01J63/08 H01J65/04

    Abstract: This light source 1 is provided with a luminescent cylinder 3A housing a luminescent part 2 to generate light; a light guide cylinder 3B connected to the luminescent cylinder 3A on a one end side, and configured to guide the light generated by the luminescent part 2, to an exit window 4 provided on the other end side; and a cylindrical reflective cylinder 9 inserted and fixed between the exit window 4 of the light guide cylinder 3B and a portion connecting the luminescent cylinder 3A and the exit window 4, and having an inner wall surface as a reflective surface 9a to reflect the light.

    Abstract translation: 该光源1设置有容纳发光部2以发光的发光筒3A; 导光筒3B,其在一端侧与发光筒3A连接,并被配置为将由发光部2产生的光引导到另一端侧的出射窗4; 以及插入并固定在导光筒3B的出射窗4与连接发光筒3A和出射窗4的部分之间并具有作为反射光的反射面9a的内壁面的筒状反射筒9。

    LIGHT EMISSION APPARATUS AND MANUFACTURING METHOD THEREOF
    123.
    发明申请
    LIGHT EMISSION APPARATUS AND MANUFACTURING METHOD THEREOF 审中-公开
    轻量排放装置及其制造方法

    公开(公告)号:US20130209794A1

    公开(公告)日:2013-08-15

    申请号:US13881020

    申请日:2010-12-20

    Abstract: A light emission apparatus (10) and a manufacturing method thereof are provided. The light emission apparatus includes a light emission base body (13) and a metal layer (14) with metal microstructure. The metal layer is set on the surface of the light emission base body. The material of light emission base body is transparent ceramic Y3Al5O12:Tb. By setting a metal layer with metal microstructure on the light emission base body, the interface between the metal layer and the light emission base body could form a surface plasmon under the cathode ray (16). The spontaneous emission of the transparent ceramic and the emission efficiency of the light emission base body could be enhanced by the effect of surface plasmon.

    Abstract translation: 一种发光装置(10)及其制造方法。 发光装置包括具有金属微结构的发光基体(13)和金属层(14)。 金属层设置在发光基体的表面上。 发光基体材料为透明陶瓷Y3Al5O12:Tb。 通过在发光基体上设置具有金属组织的金属层,金属层和发光基体之间的界面可以在阴极射线(16)下形成表面等离子体。 透明陶瓷的自发发射和发光基体的发射效率可以通过表面等离子体的作用而得到提高。

    FIELD EMISSION ANODE PLATE, FIELD EMISSION LIGHT SOURCE AND MANUFACTURING METHOD FOR LIGHT SOURCE
    124.
    发明申请
    FIELD EMISSION ANODE PLATE, FIELD EMISSION LIGHT SOURCE AND MANUFACTURING METHOD FOR LIGHT SOURCE 审中-公开
    场发射阳极板,场光发射光源和光源的制造方法

    公开(公告)号:US20130175918A1

    公开(公告)日:2013-07-11

    申请号:US13822187

    申请日:2010-09-26

    Abstract: A field emission anode plate (1), a field emission light source and a manufacturing method for the light source are provided. The field emission anode plate comprises a transparent ceramic base (10) and an anode conductive layer (11) provided on the surface of the transparent ceramic base which can be excited to produce light by cathode rays. The field emission light source comprises the field emission anode plate, a field emission cathode plate (2) and a supporter (3). The field emission cathode plate comprises a substrate (20) and a cathode conductive layer (21) provided on the surface of the substrate. The anode conductive layer and the cathode conductive layer are arranged opposite to each other, and two ends of the supporter are hermetically connected to the field emission anode plate and the field emission cathode plate respectively, thus the field emission anode plate, the field emission cathode plate and the supporter constitute a vacuum chamber. As the transparency and electron-impact resistance are improved and the corrosion and wear resistance properties are increased, the field emission anode plate is low-cost with luminance uniformity, and the field emission light source also exhibits high luminance intensity, luminance uniformity and a long service life.

    Abstract translation: 提供场致发射阳极板(1),场发射光源和用于光源的制造方法。 场致发射阳极板包括透明陶瓷基体(10)和设置在透明陶瓷基底表面上的阳极导电层(11),该阳极导电层可被激发以通过阴极射线产生光。 场发射光源包括场致发射阳极板,场发射阴极板(2)和支架(3)。 场发射阴极板包括设置在基板的表面上的基板(20)和阴极导电层(21)。 阳极导电层和阴极导电层彼此相对布置,并且支撑体的两端分别与场致发射阳极板和场致发射阴极板气密连接,因此场发射阳极板,场致发射阴极 板和支撑构成真空室。 由于透明性和电子冲击性得到改善并且耐腐蚀和耐磨性能提高,所以场致发射阳极板的成本低,亮度均匀,场发射光源也具有高亮度,亮度均匀性和长 使用寿命。

    Phosphor for low-voltage electron beam and vacuum fluorescent display apparatus
    125.
    发明授权
    Phosphor for low-voltage electron beam and vacuum fluorescent display apparatus 有权
    用于低压电子束和真空荧光显示装置的荧光粉

    公开(公告)号:US08465676B2

    公开(公告)日:2013-06-18

    申请号:US12932136

    申请日:2011-02-17

    Applicant: Koji Kato

    Inventor: Koji Kato

    CPC classification number: C09K11/54 C09K11/77 H01J63/04

    Abstract: In order to provide a phosphor for a low-voltage electron beam and a vacuum fluorescent display apparatus in which the phosphor is used, a deposition layer is formed on a surface of a main body of a phosphor shown by the following chemical formula (1), the deposition layer being a plurality of oxide layers sequentially deposited on the surface of the phosphor main body. The phosphor for a low-voltage electron beam contains no cadmium, but has exceptional high-temperature exposure characteristics, as well as prolonged service life and higher brightness. Ca1-xSrxTiO3:Pr,M  (1) where M is at least one element selected from Al, Ga, In, Mg, Zn, Li, Na, K, Gd, Y, La, Cs, and Rb; and 0≦x≦1.

    Abstract translation: 为了提供低电压电子束的荧光体和使用荧光体的真空荧光显示装置,在由下列化学式(1)表示的荧光体的主体的表面上形成沉积层, ,沉积层是顺序沉积在荧光体主体的表面上的多个氧化物层。 用于低电压电子束的荧光体不含镉,但具有特殊的高温曝光特性,以及延长的使用寿命和更高的亮度。 Ca1-xSrxTiO3:Pr,M(1)其中M是选自Al,Ga,In,Mg,Zn,Li,Na,K,Gd,Y,La,Cs和Rb中的至少一种元素; 和0 @ x @ 1。

    ULTRAVIOLET IRRADIATION APPARATUS
    126.
    发明申请
    ULTRAVIOLET IRRADIATION APPARATUS 失效
    超紫外线辐射装置

    公开(公告)号:US20130075697A1

    公开(公告)日:2013-03-28

    申请号:US13701213

    申请日:2011-05-30

    CPC classification number: H01L33/04 F21K9/69 H01J61/305 H01J63/04 H01J63/06

    Abstract: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered. film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x

    Abstract translation: 提供一种能够高效率地发射紫外线的小型紫外线照射装置。 该紫外线照射装置在容器中包括多层的半导体。 膜元件和用于用电子束照射半导体多层膜元件的电子束照射源,容器被密封以具有负的内部压力并具有紫外线透过窗口。 此外,半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N(0&nlE; x <1,0

    VACUUM WINDOW WITH EMBEDDED INFORMATION DISPLAY
    127.
    发明申请
    VACUUM WINDOW WITH EMBEDDED INFORMATION DISPLAY 审中-公开
    真空窗户嵌入信息显示

    公开(公告)号:US20130063019A1

    公开(公告)日:2013-03-14

    申请号:US13595507

    申请日:2012-08-27

    CPC classification number: H01J63/04

    Abstract: Disclosed are a semiconductor apparatus and a manufacturing method thereof. The manufacturing method of the semiconductor apparatus includes: forming a semiconductor chip on a semiconductor substrate; adhering a carrier wafer with a plurality of through holes onto the semiconductor chip; polishing the semiconductor substrate; forming a first via hole at the rear side of the polished semiconductor substrate; forming a first metal layer below the polished semiconductor substrate and at the first via hole; and removing the carrier wafer from the polished semiconductor substrate.

    Abstract translation: 公开了半导体装置及其制造方法。 半导体装置的制造方法包括:在半导体基板上形成半导体芯片; 将具有多个通孔的载体晶片粘附到所述半导体芯片上; 抛光半导体衬底; 在抛光的半导体衬底的后侧形成第一通孔; 在所述抛光的半导体衬底下方和所述第一通孔处形成第一金属层; 以及从抛光的半导体衬底去除载体晶片。

    TRIODE-TYPE FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME
    128.
    发明申请
    TRIODE-TYPE FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    三角型场发射装置及其制造方法

    公开(公告)号:US20130015778A1

    公开(公告)日:2013-01-17

    申请号:US13419821

    申请日:2012-03-14

    CPC classification number: H01J9/18 B82Y10/00 H01J63/04

    Abstract: A triode-type field emission device and method of manufacturing the same, suitable for use in screen print process of curved or planar substrate, comprising the following steps: firstly, form a cathode and a gate on a cathode substrate at the same time by means of screen printing, and a gap is located between gate and cathode, to avoid short circuit or interference; next, form a hedgehog-shape field emission layer on at least said cathode; then, form a transparent conductive layer and a light emitting layer sequentially on an anode substrate; and finally, dispose cathode substrate and anode substrate in parallel and spaced apart, and package them into a triode-type field emission device. Bias of cathode and gate can be controlled to achieve local adjustment of light. Also, gate may serve as an emitter, to increase field emission efficiency and its service life.

    Abstract translation: 一种适用于弯曲或平面基板的丝网印刷工艺的三极管型场发射器件及其制造方法,包括以下步骤:首先,通过装置同时在阴极基板上形成阴极和栅极 的丝网印刷,并且在栅极和阴极之间存在间隙,以避免短路或干扰; 接下来,在至少所述阴极上形成刺猬形场发射层; 然后依次在阳极基板上形成透明导电层和发光层; 最后,将阴极基板和阳极基板平行布置并间隔开,并将其封装成三极管型场致发射器件。 可以控制阴极和栅极的偏置,以实现局部光调节。 此外,门可以作为发射器,以增加场发射效率及其使用寿命。

    DEEP-ULTRAVIOLET LIGHT SOURCE CAPABLE OF STOPPING LEAKAGE OF HARMFUL X-RAYS
    129.
    发明申请
    DEEP-ULTRAVIOLET LIGHT SOURCE CAPABLE OF STOPPING LEAKAGE OF HARMFUL X-RAYS 有权
    DEEP-ULTRAVIOLET光源可以阻止有害X射线的泄漏

    公开(公告)号:US20120241651A1

    公开(公告)日:2012-09-27

    申请号:US13428987

    申请日:2012-03-23

    Abstract: In a deep-ultraviolet tight source includes sapphire substrate, a wide band gap semiconductor layer having a wavelength smaller than 300 nm, formed on the sapphire substrate, and en electron beam source for irradiating the wide band gap semiconductor layer with an electron beam. The wide band gap semiconductor layer is configured to be irradiated with the electron beam to emit deep-ultraviolet light through the sapphire substrate. A thickness t1 of the sapphire substrate satisfies: t1≧α·E3 where B s an energy of the electron beam (keV); and α is 1 μm/(keV)3.

    Abstract translation: 在深紫外线源中,包括形成在蓝宝石衬底上的蓝宝石衬底,波长小于300nm的宽带隙半导体层,以及用电子束照射宽带隙半导体层的电子束源。 宽带隙半导体层被配置为用电子束照射以通过蓝宝石衬底发射深紫外光。 蓝宝石基板的厚度t1满足:t1≥α·E3,其中B s是电子束的能量(keV); α为1μm/(keV)3。

    Method of making arrays of thin sheet microdischarge devices
    130.
    发明授权
    Method of making arrays of thin sheet microdischarge devices 有权
    制备薄片微放电器件阵列的方法

    公开(公告)号:US08221179B2

    公开(公告)日:2012-07-17

    申请号:US11981412

    申请日:2007-10-31

    Abstract: The cavity 102 defines an empty volume formed in the insulator 108 has its walls defined by the insulator 108 and may extend through either (or both) the first electrode 106 or the second electrode 104, in which case the first electrode and/or second electrode also define the walls of the cavity 102. The cavity 102 is preferably cylindrical and has a diameter of 0.1 μm-1 mm. More preferably, the diameter ranges from 0.1 μm-500 μm, 1 μm-100 μm, or 100 μm-500 μm. The cavity 102 will be filled with a gas that contacts the cavity walls, fills the entire cavity 102 and is selected for its breakdown voltage or light emission properties at breakdown. Light is produced when the voltage difference between the first electrode 106 and the second electrode 104 creates an electric field sufficiently large to electrically break down the gas (nominally about 104 V-cm). This light escapes from the microcavity 102 through at least one end of the cavity 102.

    Abstract translation: 空腔102限定在绝缘体108中形成的空的体积具有由绝缘体108限定的壁,并且可延伸穿过第一电极106或第二电极104(或两者)中的一个或两者,在这种情况下,第一电极和/或第二电极 还限定空腔102的壁。空腔102优选是圆柱形的并且具有0.1μm-1mm的直径。 更优选的是,直径为0.1μm〜500μm,1μm〜100μm或100μm〜500μm。 空腔102将填充有与空腔壁接触的气体,填充整个空腔102,并且在击穿时选择其击穿电压或发光特性。 当第一电极106和第二电极104之间的电压差产生足够大的电场以电气分解气体(标称约为104V-cm)时产生光。 该光通过空腔102的至少一端从微腔102逸出。

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