公开(公告)号：US20230359124A1

公开(公告)日：2023-11-09

申请号：US18352556

申请日：2023-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

公开(公告)号：US11784046B2

公开(公告)日：2023-10-10

申请号：US17150356

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Lin Wei ,  Ming-Hui Weng ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Yahru Cheng ,  Jr-Hung Li ,  Ching-Yu Chang ,  Tze-Liang Lee ,  Chi-Ming Yang

IPC: H01L21/033 ,  H01L21/308 ,  G03F7/20 ,  G03F1/22 ,  G03F7/00

CPC classification number: H01L21/0332 ,  G03F1/22 ,  G03F7/70033 ,  H01L21/0334 ,  H01L21/3081

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

公开(公告)号：US11754923B2

公开(公告)日：2023-09-12

申请号：US17214660

申请日：2021-03-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ching Chang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: B05D1/00 ,  G03F7/16 ,  H01L21/67 ,  H01L21/02

CPC classification number: G03F7/16 ,  H01L21/6715 ,  H01L21/67017 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282

Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

公开(公告)号：US11681221B2

公开(公告)日：2023-06-20

申请号：US16681610

申请日：2019-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  H01L21/027 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0046 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/32 ,  H01L21/0274

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure:




The second ligands each have a following structure:




represents the core group. L′ represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1˜6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1˜6 carbon atoms saturated by H. L′″ represents a chemical that includes 1˜6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L′″ together.

公开(公告)号：US11550220B2

公开(公告)日：2023-01-10

申请号：US16810002

申请日：2020-03-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Li-Po Yang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/16

Abstract: A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist.

公开(公告)号：US20220187711A1

公开(公告)日：2022-06-16

申请号：US17689103

申请日：2022-03-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/09

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

公开(公告)号：US11361943B2

公开(公告)日：2022-06-14

申请号：US17072861

申请日：2020-10-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Shun Hsu ,  Ching-Yu Chang ,  Chiao-Kai Chang ,  Wai Hong Cheah ,  Chien-Fang Lin

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/311

Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.

公开(公告)号：US11355318B2

公开(公告)日：2022-06-07

申请号：US17072866

申请日：2020-10-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Shun Hsu ,  Ching-Yu Chang ,  Chiao-Kai Chang ,  Wai Hong Cheah ,  Chien-Fang Lin

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.

公开(公告)号：US11300878B2

公开(公告)日：2022-04-12

申请号：US15938599

申请日：2018-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Joy Cheng

IPC: G03F7/32 ,  G03F7/004 ,  H01L21/47 ,  H01L21/027 ,  G03F7/038

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15 pKa>9.5; and a chelate.

公开(公告)号：US11295961B2

公开(公告)日：2022-04-05

申请号：US16697988

申请日：2019-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Hao Chen ,  Wei-Han Lai ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/00 ,  H01L21/321 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105

Abstract: A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.