Integrated inertial sensor and pressure sensor, and forming method therefor
    132.
    发明授权
    Integrated inertial sensor and pressure sensor, and forming method therefor 有权
    集成惯性传感器和压力传感器及其形成方法

    公开(公告)号:US09448251B2

    公开(公告)日:2016-09-20

    申请号:US14004595

    申请日:2012-02-23

    Applicant: Lianjun Liu

    Inventor: Lianjun Liu

    Abstract: An integrated inertial sensor and pressure sensor may include a first substrate including a first surface and a second surface; at least one or more conductive layers, formed on the first surface of the first substrate; a movable sensitive element, formed by using a first region of the first substrate; a second substrate and a third substrate, the second substrate being coupled to a surface of the conductive layer, the third substrate being coupled to the second surface of the first substrate in which the movable sensitive element of the inertial sensor is formed, and the third substrate and the second substrate are respectively arranged on opposite sides of the movable sensitive element; and a sensitive film of the pressure sensor, including at least a second region of the first substrate, or including at least one of the conductive layers on the second region of the first substrate.

    Abstract translation: 集成的惯性传感器和压力传感器可以包括包括第一表面和第二表面的第一基底; 形成在所述第一基板的所述第一表面上的至少一个或多个导电层; 通过使用第一衬底的第一区域形成的可移动敏感元件; 第二基板和第三基板,所述第二基板耦合到所述导电层的表面,所述第三基板耦合到所述第一基板的形成所述惯性传感器的可移动敏感元件的第二表面,并且所述第三基板 基板和第二基板分别布置在可移动敏感元件的相对侧上; 以及压力传感器的敏感膜,包括第一衬底的至少第二区域,或者在第一衬底的第二区域上包括至少一个导电层。

    Micromechanical inertial sensor and method for manufacturing same
    133.
    发明授权
    Micromechanical inertial sensor and method for manufacturing same 有权
    微机械惯性传感器及其制造方法

    公开(公告)号:US09434606B2

    公开(公告)日:2016-09-06

    申请号:US13890752

    申请日:2013-05-09

    Abstract: A micromechanical inertial sensor includes an ASIC element having a processed front side, an MEMS element having a micromechanical sensor structure, and a cap wafer mounted above the micromechanical sensor structure, which sensor structure includes a seismic mass and extends over the entire thickness of the MEMS substrate. The MEMS element is mounted on the processed front side of the ASIC element above a standoff structure and is electrically connected to the ASIC element via through-contacts in the MEMS substrate and in adjacent supports of the standoff structure. A blind hole is formed in the MEMS substrate in the area of the seismic mass, which blind hole is filled with the same electrically conductive material as the through-contacts, the conductive material having a greater density than the MEMS substrate.

    Abstract translation: 微机械惯性传感器包括具有经处理的前侧的ASIC元件,具有微机械传感器结构的MEMS元件和安装在微机械传感器结构上方的盖晶片,该传感器结构包括地震块并在MEMS的整个厚度上延伸 基质。 MEMS元件安装在ASIC元件的经处理的前侧,位于支架结构之上,并通过MEMS基板中的通孔和隔离结构的相邻支撑件电连接到ASIC元件。 在地震质量区域中的MEMS衬底中形成盲孔,该盲孔填充有与穿透接触件相同的导电材料,导电材料具有比MEMS衬底更大的密度。

    Electronic device, electronic module, electronic apparatus, and moving object
    135.
    发明授权
    Electronic device, electronic module, electronic apparatus, and moving object 有权
    电子设备,电子模块,电子设备和移动物体

    公开(公告)号:US09321627B2

    公开(公告)日:2016-04-26

    申请号:US14660058

    申请日:2015-03-17

    Inventor: Makoto Furuhata

    Abstract: An electronic device includes an accommodation space formed between a first base material and a second base material, and a first functional element and a second functional element in the accommodation space. The accommodation space is disposed in an internal region of a bonding portion that bonds the first base material and the second base material together. The bonding portion includes a first bonding region provided on one side thereof and a second bonding region provided on the other side thereof. The electronic device includes a first wiring portion which is electrically connected to the first functional element and has a first direction toward the outside of the accommodation space through the first bonding region, and a second wiring portion which is electrically connected to the second functional element and has a second direction toward the outside of the accommodation space through the second bonding region.

    Abstract translation: 电子设备包括形成在第一基材和第二基材之间的容纳空间,以及在容纳空间中的第一功能元件和第二功能元件。 容纳空间设置在将第一基材和第二基材结合在一起的接合部的内部区域。 接合部包括设置在其一侧的第一接合区域和设置在其另一侧的第二接合区域。 电子设备包括:第一布线部,其与第一功能元件电连接,并且具有通过第一接合区域朝向容纳空间的外侧的第一方向;以及第二布线部,其与第二功能元件电连接, 具有通过第二接合区域朝向容纳空间的外侧的第二方向。

    Vertical mount package and wafer level packaging therefor
    136.
    发明授权
    Vertical mount package and wafer level packaging therefor 有权
    垂直安装封装和晶圆级封装

    公开(公告)号:US09278851B2

    公开(公告)日:2016-03-08

    申请号:US14484151

    申请日:2014-09-11

    Inventor: Xiaojie Xue

    Abstract: Vertical mount packages and methods for making the same are disclosed. A method for manufacturing a vertical mount package includes providing a device substrate with a plurality of device regions on a front surface, and a plurality of through-wafer vias. MEMS devices or integrated circuits are formed or mounted onto the device regions. A capping substrate having recesses is mounted over the device substrate, enclosing the device regions within cavities defined by the recesses. A plurality of aligned through-wafer contacts extend through the capping substrate and the device substrate. The device substrate and capping substrate can be singulated by cutting through the aligned through-wafer contacts, with the severed through-wafer contacts forming vertical mount leads. A vertical mount package includes a device sealed between a device substrate and a capping substrate. At least of the side edges of the package includes exposed conductive elements for vertical mount leads.

    Abstract translation: 公开了垂直安装封装及其制造方法。 一种用于制造垂直安装封装的方法包括:在前表面上提供具有多个器件区域的器件基板,以及多个贯通晶片通孔。 MEMS器件或集成电路形成或安装到器件区域上。 具有凹槽的封盖基板安装在器件基板上,将器件区域包围在由凹槽限定的空腔内。 多个对准的跨晶片触点延伸穿过封盖衬底和器件衬底。 可以通过切割对准的通过晶片的触点来切割器件衬底和封盖衬底,切断的晶片接触件形成垂直安装引线。 垂直安装封装包括密封在器件基板和封盖基板之间的器件。 封装的至少侧边缘包括用于垂直安装引线的露出的导电元件。

    MICRO-ELECTRO-MECHANICAL DEVICE WITH COMPENSATION OF ERRORS DUE TO DISTURBANCE FORCES, SUCH AS QUADRATURE COMPONENTS
    138.
    发明申请
    MICRO-ELECTRO-MECHANICAL DEVICE WITH COMPENSATION OF ERRORS DUE TO DISTURBANCE FORCES, SUCH AS QUADRATURE COMPONENTS 有权
    微机电装置补偿由于干扰力等因素造成的错误,如作为平衡部件

    公开(公告)号:US20150377624A1

    公开(公告)日:2015-12-31

    申请号:US14750840

    申请日:2015-06-25

    Abstract: MEMS device having a support region elastically carrying a suspended mass through first elastic elements. A tuned dynamic absorber is elastically coupled to the suspended mass and configured to dampen quadrature forces acting on the suspended mass at the natural oscillation frequency of the dynamic absorber. The tuned dynamic absorber is formed by a damping mass coupled to the suspended mass through second elastic elements. In an embodiment, the suspended mass and the damping mass are formed in a same structural layer, for example of semiconductor material, and the damping mass is surrounded by the suspended mass.

    Abstract translation: MEMS器件具有通过第一弹性元件弹性地携带悬挂质量的支撑区域。 调谐动态吸收器弹性耦合到悬挂质量并且被配置为在动态吸收体的固有振荡频率下抑制作用在悬浮质量上的正交力。 调谐动态吸收器由通过第二弹性元件联接到悬挂质量的阻尼物质形成。 在一个实施例中,悬挂质量和阻尼质量形成在相同的结构层中,例如半导体材料,并且阻尼块被悬挂质量包围。

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