公开(公告)号：US20140342557A1

公开(公告)日：2014-11-20

申请号：US14370529

申请日：2013-01-03

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Bernard Diem

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  H01L21/3083

Abstract: A method for etching a desired complex pattern in a first face of a substrate, including: simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the said first face; and removing or eliminating the separating wall to expose the desired complex pattern.

Abstract translation: 一种在衬底的第一面中蚀刻期望的复合图案的方法，包括：通过衬底的第一面同时蚀刻至少第一和第二子图案，蚀刻的子图案被至少一个 分隔壁，所述第一子图案的宽度大于所述第一面处的所述第二子图案的宽度，并且所述第一子图案的深度大于所述第二子图案的方向上的深度 垂直于所述第一面; 以及去除或除去分离壁以暴露所需的复杂图案。

公开(公告)号：US08887569B2

公开(公告)日：2014-11-18

申请号：US13177485

申请日：2011-07-06

Applicant: Jong Woon Kim ,  Won Kyu Jeung

Inventor： Jong Woon Kim ,  Won Kyu Jeung

IPC: G01P15/02 ,  G01P15/09 ,  G01P15/18 ,  G01C19/56 ,  C23F1/02 ,  G01P15/08

CPC classification number: B81C1/00158 ,  B81B3/0062 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2203/053 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/01 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  C09K13/00 ,  C09K13/08 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/0922 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0871

Abstract: Disclosed herein an inertial sensor and a method of manufacturing the same. An inertial sensor 100 according to a preferred embodiment of the present invention is configured to include a plate-shaped membrane 110, a mass body 120 that includes an adhesive part 123 disposed under a central portion 113 of the membrane 110 and provided at the central portion thereof and a patterning part 125 provided at an outer side of the adhesive part 123 and patterned to vertically penetrate therethrough, and a first adhesive layer 130 that is formed between the membrane 110 and the adhesive part 123 and is provided at an inner side of the patterning part 125. An area of the first adhesive layer 130 is narrow by isotropic etching using the patterning part 125 as a mask, thereby making it possible to improve sensitivity of the inertial sensor 100.

Abstract translation: 本文公开了一种惯性传感器及其制造方法。 根据本发明的优选实施例的惯性传感器100被配置为包括板状膜110，质量体120，其包括设置在膜110的中心部分113下方并设置在中心部分处的粘合部123 以及设置在粘合部123的外侧并被图案化以垂直贯穿其中的图案形成部分125，以及形成在膜110和粘合部123之间的第一粘合层130，并且设置在第一粘合层130的内侧 图形部分125.通过使用图案形成部分125作为掩模的各向同性蚀刻，第一粘合剂层130的区域变窄，从而可以提高惯性传感器100的灵敏度。

公开(公告)号：US08815177B2

公开(公告)日：2014-08-26

申请号：US12812974

申请日：2009-01-21

Applicant: Thomas D. Perroud ,  Kamlesh D. Patel

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel

IPC: G01N1/40 ,  B01L3/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of immobilizing a particle which comprise focusing the flow of a sample fluid containing the particle into a virtual channel which flows towards an unoccupied hydrodynamic trap in a microfluidic channel such that the particle flows into the hydrodynamic trap and becomes immobilized therein. Also disclosed are microfluidic devices which comprise at least one microchannel having at least one hydrodynamic trap, at least one focusing fluid inlet, said focusing fluid inlet is upstream of the hydrodynamic trap such that a focusing fluid introduced therein results in a virtual channel of a sample fluid when present which preferentially flows toward the hydrodynamic trap.

Abstract translation: 本文公开了固定颗粒的方法，其包括将含有颗粒的样品流体的流动聚焦到虚拟通道中，该虚拟通道朝向微流体通道中的未占据的流体动力阱捕获，使得颗粒流入流体动力阱并固定在其中。 还公开了微流体装置，其包括具有至少一个流体动力捕集器，至少一个聚焦流体入口的至少一个微通道，所述聚焦流体入口在流体动力捕集器的上游，使得其中引入的聚焦流体导致样品的虚拟通道 存在时优先流向流体动力阱的流体。

公开(公告)号：US20140103497A1

公开(公告)日：2014-04-17

申请号：US14052812

申请日：2013-10-14

Applicant: Robert Bosch GmbH

Inventor： Friedjof Heuck ,  Christoph Schelling ,  Mirko Hattass ,  Benjamin Schmidt

IPC: B81C1/00

CPC classification number: B81C1/00531 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00619 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01C19/5769

Abstract: A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.

Abstract translation: 用于微机械部件的制造方法包括至少部分地从至少一个单晶硅层构造至少一个结构，至少通过给定的（110）表面在硅层的上侧执行晶体取向依赖性蚀刻步骤 硅层的取向。 对于至少一个结构的至少部分结构，在硅层的给定（110）表面取向附近在硅层的上侧附加地执行至少一个不依赖晶体取向的蚀刻步骤。

公开(公告)号：US20140001353A1

公开(公告)日：2014-01-02

申请号：US14017499

申请日：2013-09-04

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Former name: COMMISSARIAT A L'ENERGI

Inventor： Jean-Sebastien DANEL ,  Laurent DURAFFOURG ,  Frederic PROGENT ,  Charles-Marie TASSETTI

IPC: H01J49/40 ,  B05D3/10

CPC classification number: H01J49/405 ,  B05D3/10 ,  B81C1/00119 ,  B81C2201/0133 ,  B81C2203/031 ,  H01J49/0018

Abstract: A micro-reflectron for a time-of-flight mass spectrometer including a substrate and integrated with the volume of the substrate, means for application of a potential gradient in a volume suitable for constituting a flight zone of the ions. The means of application includes at least two polarization electrodes and a wall of at least one resistive material that can be polarized between these electrodes so as to generate a continuous potential gradient, itself providing the function of reflectron, this flight zone, these electrodes and this wall being obtained by the technology of microelectromechanical systems (MEMS) and this micro-reflectron having a thickness of less than 5 millimetres while its other dimensions are less than 10 times this thickness.

Abstract translation: 用于包括衬底并与衬底的体积整合的飞行时间质谱仪的微反射器是在适于构成离子的飞行区域的体积中施加电位梯度的装置。 施加装置包括至少两个极化电极和至少一个电阻材料的壁，其可以在这些电极之间极化，以便产生连续的电势梯度，其本身提供反射器的功能，该飞行区域，这些电极和这些电极 通过微机电系统（MEMS）的技术获得壁，该微反射器的厚度小于5毫米，而其它尺寸小于该厚度的10倍。

公开(公告)号：US08318606B2

公开(公告)日：2012-11-27

申请号：US12546855

申请日：2009-08-25

Applicant: Frank Baiocchi ,  David Kern ,  John DeLucca

Inventor： Frank Baiocchi ,  David Kern ,  John DeLucca

IPC: H01L21/302

CPC classification number: H01L21/31111 ,  B81B2201/042 ,  B81C1/00801 ,  B81C2201/0133

Abstract: An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.

Abstract translation: 当在诸如铜，钨，钛，金等的过渡金属存在下进行蚀刻时，使诸如二氧化硅的电介质的蚀刻剂使得由蚀刻剂暴露的单晶硅表面没有蚀刻损伤，例如蚀刻凹坑 等等。蚀刻剂包括氢氟酸和卤素阴离子源，例如盐酸或金属卤化物。 蚀刻剂在微机电系统器件制造和集成电路等的去处理中是有用的。

公开(公告)号：US20120126346A1

公开(公告)日：2012-05-24

申请号：US13290905

申请日：2011-11-07

Applicant: Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

Inventor： Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81C2201/0112 ,  B81C2201/0133 ,  B81C2201/0136

Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

Abstract translation: 在制造微机械膜结构的方法中，在硅衬底的前侧产生掺杂区域，其掺杂区域的深度对应于所需的膜厚度，并且其掺杂区域的横向范围至少覆盖预期的 膜表面积。 另外，在施加到硅衬底的背侧的DRIE（深反应离子蚀刻）工艺中，在掺杂区域之下产生空腔，在空腔到达掺杂区域之前DRIE工艺被中止。 然后在KOH蚀刻工艺中加深空腔，其中掺杂衬底区域用作蚀刻停止层，使得掺杂衬底区域保持为空腔上的基本膜。

公开(公告)号：US08148264B2

公开(公告)日：2012-04-03

申请号：US12711992

申请日：2010-02-24

Applicant: Michael D. Henry ,  Andrew P. Homyk ,  Axel Scherer ,  Sameer Walavalkar

Inventor： Michael D. Henry ,  Andrew P. Homyk ,  Axel Scherer ,  Sameer Walavalkar

IPC: H01L21/44 ,  H01L29/40

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabrication of high aspect ratio micropillars and nanopillars are described. Use of alumina as an etch mask for the fabrication methods is also described. The resulting micropillars and nanopillars are analyzed and a characterization of the etch mask is provided.

Abstract translation: 描述了用于制造高纵横比微柱和纳米柱的方法。 还描述了使用氧化铝作为制造方法的蚀刻掩模。 分析所得到的微柱和纳米柱，并提供蚀刻掩模的表征。

公开(公告)号：US08093085B2

公开(公告)日：2012-01-10

申请号：US12816231

申请日：2010-06-15

Applicant: Siew Seong Tan

Inventor： Siew Seong Tan

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  B81C2203/0735

Abstract: A method of forming a suspension object on a monolithic substrate is provided. A silicon base layer of the monolithic substrate has a circuit layer composed of at least one wet etching region, at least one circuit region, and at least one microstructure region. The wet etching region is used to partition the circuit region and the microstructure region, and extends downwards to a surface of the silicon base layer, so as to form an etching path for etching the silicon base layer from above the substrate. Next, an upper surface and a lower surface of the silicon base layer are respectively etched through dry etching, such that the microstructure region is suspended.

Abstract translation: 提供了在整体式基板上形成悬挂物体的方法。 单片基板的硅基层具有由至少一个湿蚀刻区域，至少一个电路区域和至少一个微结构区域构成的电路层。 湿蚀刻区域用于分隔电路区域和微结构区域，并向下延伸到硅基层的表面，以便形成用于从衬底上方蚀刻硅基底层的蚀刻路径​​。 接下来，分别通过干蚀刻蚀刻硅基层的上表面和下表面，使得微结构区域被悬浮。

公开(公告)号：US20110290022A1

公开(公告)日：2011-12-01

申请号：US13177485

申请日：2011-07-06

Applicant: Jong Woon Kim ,  Won Kyu Jeung

Inventor： Jong Woon Kim ,  Won Kyu Jeung

IPC: G01P15/02 ,  C23F1/02

CPC classification number: B81C1/00158 ,  B81B3/0062 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2203/053 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/01 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  C09K13/00 ,  C09K13/08 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/0922 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0871

Abstract: Disclosed herein an inertial sensor and a method of manufacturing the same. An inertial sensor 100 according to a preferred embodiment of the present invention is configured to include a plate-shaped membrane 110, a mass body 120 that includes an adhesive part 123 disposed under a central portion 113 of the membrane 110 and provided at the central portion thereof and a patterning part 125 provided at an outer side of the adhesive part 123 and patterned to vertically penetrate therethrough, and a first adhesive layer 130 that is formed between the membrane 110 and the adhesive part 123 and is provided at an inner side of the patterning part 125. An area of the first adhesive layer 130 is narrow by isotropic etching using the patterning part 125 as a mask, thereby making it possible to improve sensitivity of the inertial sensor 100.

Abstract translation: 本文公开了一种惯性传感器及其制造方法。 根据本发明的优选实施例的惯性传感器100被配置为包括板状膜110，质量体120，其包括设置在膜110的中心部分113下方并设置在中心部分处的粘合部123 以及设置在粘合部123的外侧并被图案化以垂直贯穿其中的图案形成部分125，以及形成在膜110和粘合部123之间的第一粘合层130，并且设置在第一粘合层130的内侧 图形部分125.通过使用图案形成部分125作为掩模的各向同性蚀刻，第一粘合剂层130的区域变窄，从而可以提高惯性传感器100的灵敏度。