公开(公告)号：US09594306B2

公开(公告)日：2017-03-14

申请号：US14002000

申请日：2011-12-21

Applicant: Vadim Yevgenyevich Banine ,  Wilhelmus Petrus De Boeij ,  Antonius Johannes Josephus Van Dijsseldonk Van Dijsseldonk ,  Erik Roelof Loopstra ,  Johannes Hubertus Josephina Moors ,  Jan Bernard Plechelmus Van Schoot ,  Gerardus Hubertus Petrus Maria Swinkels ,  Andrei Mikhailovich Yakunin

Inventor： Vadim Yevgenyevich Banine ,  Wilhelmus Petrus De Boeij ,  Antonius Johannes Josephus Van Dijsseldonk Van Dijsseldonk ,  Erik Roelof Loopstra ,  Johannes Hubertus Josephina Moors ,  Jan Bernard Plechelmus Van Schoot ,  Gerardus Hubertus Petrus Maria Swinkels ,  Andrei Mikhailovich Yakunin

IPC: G03F7/20 ,  B82Y10/00 ,  G21K1/06 ,  H05G2/00

CPC classification number: G03F7/70191 ,  B82Y10/00 ,  G02B1/11 ,  G02B5/1838 ,  G02B5/281 ,  G02B5/283 ,  G03F7/70008 ,  G03F7/702 ,  G03F7/70308 ,  G03F7/70575 ,  G21K1/062 ,  G21K1/067 ,  G21K2201/061 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract translation: 一种光刻设备，用于将辐射束图案化并将其投影到衬底上，包括至少两个光谱纯度滤光器，其被配置为在至少一个不期望的辐射波长范围内降低辐射束中的辐射强度，其中两个光谱纯度 过滤器具有彼此不同的辐射过滤结构。

公开(公告)号：US09500602B2

公开(公告)日：2016-11-22

申请号：US14488379

申请日：2014-09-17

Applicant: Siemens Aktiengesellschaft

Inventor： Gisela Anton ,  Florian Bayer ,  Jürgen Durst ,  Thilo Michel ,  Georg Pelzer ,  Jens Rieger ,  Thomas Weber

IPC: G03H5/00 ,  G01N23/20 ,  G21K1/06 ,  G21K5/04 ,  G01N23/04 ,  A61B6/00

CPC classification number: G01N23/20075 ,  A61B6/4291 ,  A61B6/4441 ,  A61B6/4452 ,  A61B6/4476 ,  A61B6/484 ,  A61B6/5241 ,  G01N23/04 ,  G01N2223/401 ,  G01N2223/612 ,  G21K1/067 ,  G21K5/04 ,  G21K2201/067 ,  G21K2207/005

Abstract: A method, for examining an object using an X-ray recording system, includes during an X-ray image recording, moving components relative to one another with the lateral displacement by displacement distances. The method includes generating the X-ray image recording during the displacement from n partial images, so that the total exposure time of the X-ray image recording is made up from a sum of partial exposure times. In each of the partial images, the intensity is determined in each pixel. The position of the second component relative to the first component is determined for each recording of the partial images. Finally, the image information is determined from the partial images and the displacements.

Abstract translation: 一种用于使用X射线记录系统检查物体的方法包括在X射线图像记录期间，通过位移距离的横向位移相对于彼此移动部件。 该方法包括在从n个部分图像的位移期间产生X射线图像记录，使得X射线图像记录的总曝光时间由部分曝光时间之和构成。 在每个部分图像中，在每个像素中确定强度。 针对部分图像的每个记录确定第二分量相对于第一分量的位置。 最后，从部分图像和位移确定图像信息。

公开(公告)号：US09470872B2

公开(公告)日：2016-10-18

申请号：US14528690

申请日：2014-10-30

Applicant: Carl Zeiss SMT GmbH

Inventor： Boris Bittner ,  Norbert Wabra ,  Sonja Schneider ,  Ricarda Schneider ,  Hendrik Wagner ,  Rumen Iliew ,  Walter Pauls

IPC: G03F9/00 ,  G03F1/52 ,  G02B7/18 ,  G01N21/95 ,  G03F7/20 ,  G03F1/84 ,  G21K1/06

CPC classification number: G02B7/181 ,  G01N21/95 ,  G01N2201/0636 ,  G03F1/52 ,  G03F1/84 ,  G03F7/702 ,  G03F7/70316 ,  G03F7/70891 ,  G03F7/7095 ,  G21K1/062 ,  G21K2201/067

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract translation: 用于微光刻投影曝光装置的反射型光学元件，掩模检查装置等。 反射光学元件具有光学有效的表面，元件基底（12,32,42,52），反射层系统（14,34,44,54）和至少一个变形减小层（15,35,45） 55，58）。 当光学有效表面（11,31,41,51）被电磁辐射照射时，与没有变形减少层的类似构造的反射光学元件的变形水平相比，反射层系统的最大变形水平降低。

公开(公告)号：US20160195648A1

公开(公告)日：2016-07-07

申请号：US14796612

申请日：2015-07-10

Applicant: Carl Zeiss SMT GMBH

Inventor： Thomas Schicketanz ,  Hans-Jochen Paul ,  Christoph Zaczek

IPC: G02B5/08 ,  G03F7/20

CPC classification number: G03F7/70316 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/0891 ,  G03F7/702 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: An EUV mirror with a substrate and a multilayer arrangement including: a periodic first layer group having N1>1 first layer pairs of period thickness P1 and arranged on a radiation entrance side of the multilayer arrangement; a periodic second layer group having N2>1 second layer pairs of period thickness P2 and arranged between the first layer group and the substrate; and a third layer group having N3 third layer pairs arranged between the first and second layer groups. N1>N2. The third layer group has a mean third period thickness P3 which deviates from an average period thickness PM=(P1+P2)/2 by a period thickness difference ΔP. ΔP corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of N3 and cos(AOIM), AOIM being the mean incidence angle for which the multilayer arrangement is designed.

Abstract translation: 一种具有基板和多层布置的EUV反射镜，包括：具有N1> 1个第一层周期厚度P1并布置在多层布置的辐射入口侧的周期性第一层组; 周期性第二层组，具有N 2> 1个第二层周期厚度P2并且布置在第一层组和衬底之间; 以及第三层组，其具有布置在第一和第二层组之间的N3个第三层对。 N1> N2。 第三层组的平均第三期厚度P3偏离周期厚度差Dgr; P的平均周期厚度PM =（P1 + P2）/ 2。 ＆Dgr; P对应于四分之一波长层的光学层厚度（λ/ 4）和N3和cos（AOIM）的乘积，AOIM是设计多层布置的平均入射角。

公开(公告)号：US09341958B2

公开(公告)日：2016-05-17

申请号：US14032724

申请日：2013-09-20

Applicant: CARL ZEISS SMT GmbH

Inventor： Hartmut Enkisch ,  Stephan Muellender ,  Martin Endres

IPC: G03B27/54 ,  G03F7/20 ,  G02B17/06 ,  G21K1/06 ,  B82Y10/00

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B17/06 ,  G02B17/0663 ,  G03F7/70191 ,  G03F7/70308 ,  G03F7/70316 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.

Abstract translation: 一种用于使用具有掠入射的偏转镜照射投影曝光设备（1067）的物平面中的物场的微光刻投影曝光设备的偏转镜（1,501等）。 该偏转镜具有衬底（3,503等）和至少一个层系（5,505等），并且在操作期间，光以多个入射角撞击在所述反射镜上，其中层系是 设计成使得对于波长小于30nm的光，对于入射角在55°和70°之间的反射率的变化小于20％，特别是小于12％。

公开(公告)号：US09263162B2

公开(公告)日：2016-02-16

申请号：US14473837

申请日：2014-08-29

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takayuki Teshima

IPC: C23F1/00 ,  G21K1/06 ,  C23F1/12 ,  C09K13/02 ,  C09K13/08 ,  C23F1/02 ,  C23F1/18 ,  C23F1/28 ,  C23F1/44 ,  C25D1/08

CPC classification number: G21K1/067 ,  C09K13/02 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  C23F1/18 ,  C23F1/28 ,  C23F1/44 ,  C25D1/08 ,  G21K2201/067 ,  G21K2207/005

Abstract: A method is provided for producing a microstructure. The method includes the first step of forming a supporting layer on a base substrate including a silicon substrate provided with recessed sections at a first surface thereof and a metal structure filling the recessed sections so as to come in contact with the metal structure at the first surface, the second step of forming a structure including the metal structure and the supporting layer by selectively etching the silicon substrate to expose at least the surface of the metal structure opposite the surface in contact with the supporting layer from the silicon substrate, and the third step of selectively etching the supporting layer of the metal structure.

Abstract translation: 提供了一种生产微结构的方法。 该方法包括在包括在其第一表面上设置有凹部的硅基板的基底基板上形成支撑层的第一步骤和填充凹部的金属结构，以在第一表面与金属结构接触 第二步是通过选择性地蚀刻硅衬底来形成包括金属结构和支撑层的结构，以至少暴露出与硅衬底相接触的与支承层接触的表面的金属结构的表面，第三步骤 选择性地蚀刻金属结构的支撑层。

公开(公告)号：US09249501B2

公开(公告)日：2016-02-02

申请号：US13475173

申请日：2012-05-18

Applicant: Dirk Heinrich Ehm ,  Franz-Josef Stickel ,  Juergen Mueller

Inventor： Dirk Heinrich Ehm ,  Franz-Josef Stickel ,  Juergen Mueller

IPC: G03B27/52 ,  C23C14/48 ,  G03B7/20 ,  G02B26/08 ,  G03F7/20 ,  G21K1/06 ,  G02B17/06

CPC classification number: C23C14/48 ,  G02B17/0657 ,  G02B26/0825 ,  G03B7/20 ,  G03F7/70266 ,  G03F7/70316 ,  G03F7/7095 ,  G21K1/062 ,  G21K2201/067

Abstract: A mirror (1) for a microlithography projection exposure apparatus including a substrate (3) and a reflective coating (5). A functional coating (11) between the substrate (3) and the reflective coating (5) has a local form variation (19) for correcting the surface form of the mirror (1), wherein the local form variation (19) is brought about by a local variation in the chemical composition of the functional coating (11) and wherein a thickness of the reflective coating (5) is not changed by the local variation in the chemical composition of the functional coating (11). The local variation in the chemical composition of the functional coating (11) can be brought about by bombardment with particles (15), for example with hydrogen ions.

Abstract translation: 一种用于包括基板（3）和反射涂层（5）的微光刻投影曝光装置的反射镜（1）。 在基板（3）和反射涂层（5）之间的功能性涂层（11）具有用于校正反射镜（1）的表面形状的局部形状变化（19），其中局部形状变化（19）带来 通过功能性涂层（11）的化学组成的局部变化，并且其中反射涂层（5）的厚度不会由于功能涂层（11）的化学组成的局部变化而改变。 功能性涂层（11）的化学组成的局部变化可以通过用颗粒（15）例如用氢离子轰击来实现。

公开(公告)号：US09234856B2

公开(公告)日：2016-01-12

申请号：US13809335

申请日：2011-08-01

Applicant: Taihei Mukaide

Inventor： Taihei Mukaide

IPC: G01N23/04 ,  G01N23/20 ,  G01N23/083 ,  G21K1/06

CPC classification number: G01N23/20 ,  G01N23/04 ,  G01N23/083 ,  G21K1/06 ,  G21K2201/06 ,  G21K2201/067 ,  G21K2207/005

Abstract: An apparatus for deriving X-ray absorbing and phase information comprises; a splitting element for splitting spatially an X-ray, a detector for detecting intensities of the X-rays transmitted through an object, the intensity of the X-rays changing according to X-ray phase and also position changes, and an calculating unit for calculating an X-ray transmittance image, and an X-ray differential phase contrast or phase sift contrast image as the phase information. The X-ray is split into two or more X-rays having different widths, and emitted onto the detector unit. And, the calculating unit calculates the X-ray absorbing and phase information based on a difference, between the two or more X-rays, in correlation between the changing of the phase of the X-ray and the changing the intensity of the X-ray in the detector unit.

Abstract translation: 用于导出X射线吸收和相位信息的装置包括： 用于在空间上分割X射线的分离元件，用于检测透过物体的X射线的强度的检测器，X射线相位变化的X射线的强度以及位置变化，以及用于 计算X射线透射率图像，以及X射线差分相位对比度或相移筛选图像作为相位信息。 X射线被分成具有不同宽度的两个或更多个X射线，并被发射到检测器单元上。 并且，计算单元根据X射线的相位的变化与X射线的强度的变化的关系，基于两个以上的X射线之间的差异来计算X射线吸收和相位信息， 射线在检测器单元。

公开(公告)号：US09229331B2

公开(公告)日：2016-01-05

申请号：US14227784

申请日：2014-03-27

Applicant: CARL ZEISS SMT GMBH

Inventor： Gisela von Blanckenhagen ,  Dirk Heinrich Ehm

IPC: G03B27/70 ,  G02B5/08 ,  G03F7/20 ,  G21K1/06 ,  C23C16/30 ,  B82Y10/00 ,  F21V9/04 ,  F21V9/06 ,  G02B5/20 ,  B05D3/06

CPC classification number: G03F7/702 ,  B82Y10/00 ,  C23C16/308 ,  G02B5/0891 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: A mirror (13) for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate (15) and a coating (16) reflective to EUV radiation (6), the reflective coating having a capping layer (18) composed of an oxynitride, in particular composed of SiNxOY, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror (13) and a method for operating such an EUV lithography apparatus.

Abstract translation: 镜子（13） 在EUV光刻设备或EUV掩模测量系统中，具有：反射到EUV辐射（6）的基底（15）和涂层（16），所述反射涂层具有由氮氧化物组成的覆盖层（18），特别是 由SiN x O Y组成，其中氮氧化物N x OY中的氮比例x在0.4和1.4之间。 还提供了具有至少一个这样的EUV反射镜（13）的EUV光刻设备和用于操作这样的EUV光刻设备的方法。

公开(公告)号：US20150355112A1

公开(公告)日：2015-12-10

申请号：US14655686

申请日：2013-12-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Genta Sato

IPC: G01N23/04 ,  G21K1/06 ,  G06F5/01 ,  G01N23/20

CPC classification number: G01N23/04 ,  A61B6/4035 ,  A61B6/4291 ,  A61B6/481 ,  A61B6/484 ,  A61B6/504 ,  A61B6/5235 ,  G01N23/20075 ,  G06F5/01 ,  G21K1/067 ,  G21K2201/067

Abstract: A computation apparatus includes a normalization unit configured to normalize values of two of distributions including a distribution of absorption information of a subject, a distribution of phase information of the subject, and a distribution of scattering information of the subject which are calculated by using a projection image of the subject by X-rays, and a calculation unit configured to calculate a difference or quotient of the normalized two distributions and obtain a composite distribution.

Abstract translation: 计算装置包括归一化单元，其被配置为对包括被摄体的吸收信息的分布，被检体的相位信息的分布以及被检体的散射信息的分布的两个分布的值进行归一化， 以及计算单元，被配置为计算归一化的两个分布的差或商，并获得复合分布。