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    METHODS AND COMPOSITIONS FOR DIELECTRIC MATERIALS
    142.
    发明申请
    METHODS AND COMPOSITIONS FOR DIELECTRIC MATERIALS 审中-公开
    电介质材料的方法和组合物

    公开(公告)号：US20100136223A1

    公开(公告)日：2010-06-03

    申请号：US12644543

    申请日：2009-12-22

    Applicant: Kevin G. NELSON

    Inventor： Kevin G. NELSON

    IPC: H05K3/02 ,  B05D5/12

    CPC classification number: H01B3/445 ,  C08K7/14 ,  C08L27/18 ,  C08L2205/025 ,  H05K1/034 ,  H05K2201/015 ,  H05K2201/0209 ,  H05K2203/1131 ,  Y10T428/24322 ,  Y10T428/249953 ,  Y10T428/249991 ,  Y10T428/26 ,  Y10T428/266 ,  Y10T428/31544 ,  Y10T428/31678

    Abstract: The present invention comprises methods and compositions of dielectric materials. The dielectric materials of the present invention comprise materials having a dielectric constant of more than 1.0 and less than 1.9 and/or a dissipation factor of less than 0.0009. Other characteristics include the ability to withstand a wide range of temperatures, from both high temperatures of approximately +260° C. to low temperatures of approximately −200° C., operate in wide range of atmospheric conditions and pressures (e.g., a high atmosphere, low vacuum condition such as that found in the outer-space as well as conditions similar to those found at sea level or below sea level). The dielectric materials of the present invention may be used in the manufacture of composite structures that can be used alone or in combination with other materials, and can be used in electronic components or devices such as RF interconnects.

    Abstract translation: 本发明包括介电材料的方法和组合物。 本发明的电介质材料包括介电常数大于1.0且小于1.9的材料和/或损耗系数小于0.0009的材料。 其他特征包括能够承受大范围的温度，从大约+ 260℃的高温到约-200℃的低温，在大气条件和压力的大范围（例如高气氛 ，诸如在外层空间中发现的低真空条件以及类似于海平面或海平面以下的条件的条件）。 本发明的电介质材料可以用于复合结构的制造，其可以单独使用或与其它材料组合使用，并且可以用于电子部件或诸如RF互连的装置中。

    Metal pattern and process for producing the same
    143.
    发明授权
    Metal pattern and process for producing the same 失效
    金属图案及其制造方法

    公开(公告)号：US07658860B2

    公开(公告)日：2010-02-09

    申请号：US10568158

    申请日：2005-01-13

    Applicant: Tohru Nakagawa

    Inventor： Tohru Nakagawa

    IPC: C03C15/00 ,  C03C25/68 ,  C25F3/00

    CPC classification number: C25D5/022 ,  C23F1/02 ,  C23F1/14 ,  C23F1/18 ,  C23F1/30 ,  C23F1/40 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L51/0019 ,  H01L51/0022 ,  H05K3/061 ,  H05K2201/015 ,  H05K2201/0239 ,  H05K2203/013 ,  H05K2203/0582 ,  H05K2203/0585 ,  H05K2203/122

    Abstract: A metal pattern of the present invention is a metal pattern (13′) formed on a surface of a substrate by etching, and a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) is formed on a surface of a metal film composing the metal pattern (13′), and a masking film (18) is formed by penetration of a molecule having a mercapto group (—SH) or a disulfide (—SS—) group into interstices between molecules composing the monomolecular film. The metal pattern is produced by: forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) on a surface of a metal film; forming a masking film by applying a solution in which a molecule having a mercapto group (—SH) or a disulfide (—SS—) group is dissolved over a surface of the monomolecular film so that the molecule having a mercapto group (—SH) or a disulfide (—SS—) group penetrates in interstices between molecules composing the monomolecular film; and etching the metal film by exposing the surface of the metal film to an etching solution so that a portion of the metal film in a region not covered with the masking film is removed.

    Abstract translation: 本发明的金属图案是通过蚀刻形成在基板的表面上的金属图案（13'），并且含有氟化烷基链（CF 3（CF 2）n - ，其中n表示整数）的单分子膜形成在 构成金属图案（13'）的金属膜的表面和通过将具有巯基（-SH）或二硫化物（-SS-））基团的分子渗入分子之间的分子形成掩蔽膜（18） 组成单分子膜。 金属图案通过在金属膜的表面上形成含有氟化烷基链（CF 3（CF 2）n - ，其中n表示整数）的单分子膜; 通过将分子中具有巯基（-SH）或二硫键（-SS-））的分子溶解在单分子膜的表面上形成掩蔽膜，使得具有巯基的分子（-SH） 或二硫化物（-SS-）基团穿透构成单分子膜的分子之间的间隙; 并且通过将金属膜的表面暴露于蚀刻溶液来蚀刻金属膜，从而去除未被掩模膜覆盖的区域中的金属膜的一部分。

    Metal pattern and process for producing the same
    147.
    发明申请
    Metal pattern and process for producing the same 失效
    金属图案及其制造方法

    公开(公告)号：US20090139421A1

    公开(公告)日：2009-06-04

    申请号：US10568158

    申请日：2005-01-13

    Applicant: Tohru Nakagawa

    Inventor： Tohru Nakagawa

    IPC: B41N3/00

    CPC classification number: C25D5/022 ,  C23F1/02 ,  C23F1/14 ,  C23F1/18 ,  C23F1/30 ,  C23F1/40 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L51/0019 ,  H01L51/0022 ,  H05K3/061 ,  H05K2201/015 ,  H05K2201/0239 ,  H05K2203/013 ,  H05K2203/0582 ,  H05K2203/0585 ,  H05K2203/122

    Abstract: A metal pattern of the present invention is a metal pattern (13′) formed on a surface of a substrate by etching, and a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) is formed on a surface of a metal film composing the metal pattern (13′), and a masking film (18) is formed by penetration of a molecule having a mercapto group (—SH) or a disulfide (—SS—) group into interstices between molecules composing the monomolecular film. The metal pattern is produced by: forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) on a surface of a metal film; forming a masking film by applying a solution in which a molecule having a mercapto group (—SH) or a disulfide (—SS—) group is dissolved over a surface of the monomolecular film so that the molecule having a mercapto group (—SH) or a disulfide (—SS—) group penetrates in interstices between molecules composing the monomolecular film; and etching the metal film by exposing the surface of the metal film to an etching solution so that a portion of the metal film in a region not covered with the masking film is removed.

    Abstract translation: 本发明的金属图案是通过蚀刻形成在基板的表面上的金属图案（13'），并且含有氟化烷基链（CF 3（CF 2）n - ，其中n表示整数）的单分子膜形成在 构成金属图案（13'）的金属膜的表面和通过将具有巯基（-SH）或二硫化物（-SS-））基团的分子渗入分子之间的分子形成掩蔽膜（18） 组成单分子膜。 金属图案通过在金属膜的表面上形成含有氟化烷基链（CF 3（CF 2）n - ，其中n表示整数）的单分子膜; 通过将分子中具有巯基（-SH）或二硫键（-SS-））的分子溶解在单分子膜的表面上形成掩蔽膜，使得具有巯基的分子（-SH） 或二硫化物（-SS-）基团穿透构成单分子膜的分子之间的间隙; 并且通过将金属膜的表面暴露于蚀刻溶液来蚀刻金属膜，从而去除未被掩模膜覆盖的区域中的金属膜的一部分。

    HIGH-FREQUENCY SUBSTRATE AND PRODUCTION METHOD THEREFOR
    148.
    发明申请
    HIGH-FREQUENCY SUBSTRATE AND PRODUCTION METHOD THEREFOR 有权
    高频基板及其生产方法

    公开(公告)号：US20090127517A1

    公开(公告)日：2009-05-21

    申请号：US12096873

    申请日：2006-12-05

    Applicant: Masao Tamada ,  Noriaki Seko ,  Eiji Sakata ,  Naoki Itoh

    Inventor： Masao Tamada ,  Noriaki Seko ,  Eiji Sakata ,  Naoki Itoh

    IPC: H01B1/22 ,  H01B1/12 ,  B32B37/00

    CPC classification number: H05K3/386 ,  C08J7/16 ,  C08J2327/18 ,  H05K1/034 ,  H05K3/16 ,  H05K3/181 ,  H05K3/381 ,  H05K3/387 ,  H05K3/388 ,  H05K2201/015 ,  H05K2203/092 ,  H05K2203/1168 ,  Y10T428/31699

    Abstract: To provide a technique for producing a high-frequency substrate featuring a superior adhesion force of a conductor.The high-frequency substrate is constructed of a base member and a conductor adhered to the base member, and the base member is composed of a polymer which is a fluoropolymer having a conductor-affinitive monomer graftpolymerized at a grafting percentage of 1% or less by weight. After reactive sites necessary for graftpolymerization are formed on a film of a fluoropolymer under an oxygen-free atmosphere by irradiating the film with an electron beam or the like, the fluoropolymer film is introduced into a solution of a conductor-affinitive monomer so as to cause graftpolymerization, and a conductor is adhered thereto to thereby produce a substrate, with a grafting percentage of the monomer to the fluoropolymer being 1% or less by weight in the graftpolymerization.

    Abstract translation: 提供用于制造具有优异的导体粘附力的高频基板的技术。 高频基板由基材和粘合到基材的导体构成，基材由聚合物构成，该聚合物是具有以1％以下接枝率接枝聚合的导体亲和性单体的含氟聚合物，接枝率为1％以下 重量。 在通过用电子束等照射薄膜的情况下，在无氧气氛的氟聚合物的膜上形成接枝聚合所需的活性部位后，将含氟聚合物膜引入导体亲和性单体的溶液中， 接枝聚合，并且将导体粘附到其上，从而制备基材，在接枝聚合中单体与含氟聚合物的接枝百分比为1重量％或更少。

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