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    Thermally activated polymer device
    155.
    发明申请
    Thermally activated polymer device 有权
    热活化聚合物装置

    公开(公告)号：US20020037221A1

    公开(公告)日：2002-03-28

    申请号：US09874927

    申请日：2001-06-05

    Inventor： Carlos H. Mastrangelo ,  Edwin T. Carlen

    IPC: H01L041/08 ,  H01L041/18 ,  B05B017/04 ,  E03B001/00 ,  B05B012/08 ,  F17D001/00 ,  H02N002/00 ,  A01G025/00 ,  A01G027/00 ,  F04B049/02

    CPC classification number: F15C5/00 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2201/054 ,  F03G7/06 ,  F04B17/00 ,  F04B43/043 ,  F15B2015/208 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0036 ,  F16K2099/0074 ,  F16K2099/008 ,  F16K2099/0084 ,  Y10T137/0368

    Abstract: A microfluidic device adapted for use with a power source is disclosed. The device includes a substrate and a heater member. The substrate and heater member form a first portion. A second portion is formed adjacent to the first portion. The second portion includes a high activating power polymer portion, at least one resin layer and a shield member. The second portion is selectively shaped to form a thermal expansion portion. A diaphragm member encapsulates the thermal expansion portion so that when power is applied to the heater portion, the high activating power polymer expands against the diaphragm member, causing the diaphragm member to deflect. This device is adapted for use as a microactuator or a blocking microvalve.

    Abstract translation: 公开了一种适用于电源的微流体装置。 该装置包括基板和加热器构件。 衬底和加热器构件形成第一部分。 第二部分与第一部分相邻地形成。 第二部分包括高激活力聚合物部分，至少一个树脂层和屏蔽部件。 第二部分被选择成形以形成热膨胀部分。 隔膜构件封装热膨胀部分，使得当向加热器部分施加电力时，高启动力聚合物抵靠隔膜构件膨胀，导致隔膜构件偏转。 该装置适用于微致动器或阻塞微型阀。

    Microactuators including a metal layer on distal portions of an arched beam
    158.
    发明授权
    Microactuators including a metal layer on distal portions of an arched beam 有权
    微型致动器包括在拱形梁的远端部分上的金属层

    公开(公告)号：US06255757B1

    公开(公告)日：2001-07-03

    申请号：US09388321

    申请日：1999-09-01

    Applicant: Vijayakumar R. Dhuler ,  Mark David Walters

    Inventor： Vijayakumar R. Dhuler ,  Mark David Walters

    IPC: H02N1000

    CPC classification number: F15C5/00 ,  B81B3/0051 ,  B81B2201/031 ,  B81B2201/054 ,  B81B2203/0109 ,  B81B2203/051 ,  B81C2203/031 ,  B81C2203/036 ,  F16K99/0001 ,  F16K99/0007 ,  F16K99/0009 ,  F16K99/0011 ,  F16K99/0036 ,  F16K2099/0074 ,  F16K2099/008 ,  H01H2001/0042

    Abstract: A microelectromechanical (MEMS) device is provided that includes a microelectronic substrate and a thermally actuated microactuator and associated components disposed on the substrate and formed as a unitary structure from a single crystalline material, wherein the associated components arc actuated by the microactuator upon thermal actuation thereof. For example, the MEMS device may be a valve. As such, the valve may include at least one valve plate that is controllably brought into engagement with at least one valve opening in the microelectronic substrate by selective actuation of the microactuator. While the MEMS device can include various microactuators, the microactuator advantageously includes a pair of spaced apart supports disposed on the substrate and at least one arched beam extending therebetween. By heating the at least one arched beam of the microactuator, the arched beams will further arch such that the microactuator moves between a closed position in which the valve plate sealingly engages the valve opening and an open position in which the valve plate is at least partly disengaged from and does not seal the valve opening. The microactuator may further include metallization traces on distal portions of the arched beams to constrain the thermally actuated regions of arched beams to medial portions thereof. The valve may also include a latch for maintaining the valve plate in a desired position without requiring continuous energy input to the microactuator. An advantageous method for fabricating a MEMS valve having unitary structure single crystalline components is also provided.

    Abstract translation: 提供了一种微机电（MEMS）装置，其包括微电子基板和热致动微致动器以及设置在基板上并由单晶材料形成为单一结构的相关部件，其中相关联的部件由微致动器在其热致动时被致动 。 例如，MEMS器件可以是阀。 因此，阀可以包括至少一个阀板，该阀板通过选择性地致动微致动器而可控制地与微电子衬底中的至少一个阀开口接合。 虽然MEMS器件可以包括各种微致动器，微致动器有利地包括设置在基板上的一对间隔开的支撑件和在其间延伸的至少一个拱形梁。 通过加热微致动器的至少一个拱形梁，拱形梁将进一步拱起，使得微致动器在关闭位置之间移动，在该关闭位置中阀板密封地接合阀开口和打开位置，在该位置阀板至少部分地 与阀开口脱离并不密封。 微致动器还可以包括在拱形梁的远侧部分上的金属化迹线，以将拱形梁的热致动区域约束到其中间部分。 阀还可以包括用于将阀板保持在期望位置的闩锁，而不需要连续的能量输入到微致动器。 还提供了一种用于制造具有单一结构单晶组件的MEMS阀的有利方法。

    Boron nutride membrane in wafer structure
    160.
    发明授权
    Boron nutride membrane in wafer structure 失效
    硼硅胶膜晶圆结构

    公开(公告)号：US5270125A

    公开(公告)日：1993-12-14

    申请号：US782705

    申请日：1991-10-25

    Applicant: William G. America ,  Richard R. Poole

    Inventor： William G. America ,  Richard R. Poole

    IPC: C23C16/34 ,  G01N25/18 ,  G03F1/22 ,  B32B9/00 ,  G03F9/00

    CPC classification number: B81B3/0021 ,  C23C16/342 ,  G01N25/18 ,  G03F1/22 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/052 ,  B81B2201/054 ,  B81B2203/0127 ,  B81B2203/0315 ,  Y10T428/24612 ,  Y10T428/24777

    Abstract: A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B.sub.3 N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.

    Abstract translation: 叠层结构包括具有膜的膜片构件，膜由具有标称组成B3N的基本上无氢的氮化硼形成。 该结构可以是用于实现机械功能的机械装置中的部件，或者膜可以在晶片上形成掩模层。 该结构包括由至少两个晶片构件形成的主体，所述至少两个晶片构件在其间形成有腔，其中氮化硼膜延伸到空腔中，以便提供结构部件，例如气体中的加热元件或膜的支撑体 阀。 在另一方面，硼化物选择性地从氮化硼扩散到硅晶片的<100>表面。 然后将表面暴露于扩散层所抵抗的EDP蚀刻剂，从而形成具有平滑壁用于流体流动的晶片构件的通道。

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