公开(公告)号：US08999492B2

公开(公告)日：2015-04-07

申请号：US12026214

申请日：2008-02-05

Applicant: Dan B. Millward ,  Gurtej S. Sandhu

Inventor： Dan B. Millward ,  Gurtej S. Sandhu

IPC: G03G7/00 ,  B05D5/02 ,  C08F2/46 ,  C03C25/68 ,  G03F7/00 ,  B81C99/00 ,  B82Y10/00 ,  B05D1/28 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: B41N1/08 ,  B05D1/283 ,  B41N3/036 ,  B81C99/009 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  Y02C20/30 ,  Y10T428/24802

Abstract: Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

Abstract translation: 提供用于制造用于图案化衬底的印记和系统的方法以及由这些方法产生的器件。

公开(公告)号：US20150091137A1

公开(公告)日：2015-04-02

申请号：US14040245

申请日：2013-09-27

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  C08G81/00

CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0149 ,  C08G81/00 ,  C08L53/005 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058

Abstract: A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.

Abstract translation: 形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂 与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

公开(公告)号：US20150048049A1

公开(公告)日：2015-02-19

申请号：US14384725

申请日：2013-03-21

Applicant: Tokyo Electron Limited

Inventor： Eiichi Nishimura ,  Fumiko Yamashita ,  Satoko Niitsuma

IPC: C08J7/12 ,  H01J37/32

CPC classification number: C08J7/123 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08J2353/00 ,  G03F7/0002 ,  H01J37/32366 ,  H01J37/32651 ,  H01J2237/334 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31127 ,  H01L21/31133 ,  H01L21/31138

Abstract: A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process.

Abstract translation: 提供一种使第一聚合物和第二聚合物嵌段共聚物自组装在下层膜上并在引导层中形成周期性图案的方法。 该方法包括通过从第一气体产生的等离子体蚀刻第二聚合物的第一蚀刻工艺，在第一聚合物的表面上沉积第一保护膜的第一膜沉积工艺和除第二聚合物的蚀刻部分之外的引导层 通过在第一蚀刻工艺之后由第二气体产生的等离子体，以及第二蚀刻工艺，在第一膜沉积工艺之后，通过由第一气体产生的等离子体进一步蚀刻第二聚合物。

公开(公告)号：US08952502B2

公开(公告)日：2015-02-10

申请号：US14010991

申请日：2013-08-27

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Cheng-Hsiung Tsai ,  Chung-Ju Lee ,  Yu-Sheng Chang ,  Tsung-Jung Tsai

IPC: H01L23/58 ,  H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  B81C1/00 ,  H01L29/02

CPC classification number: H01L21/32139 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/324 ,  H01L29/02

Abstract: One or more techniques or systems for forming a pattern during semiconductor fabrication are provided herein. In some embodiments, a photo resist (PR) region is patterned and a spacer region is formed above or surrounding at least a portion of the patterned PR region. Additionally, at least some of the spacer region and the patterned PR region are removed to form one or more spacers. Additionally, a block co-polymer (BCP) is filled between the spacers. In some embodiments, the BCP comprises a first polymer and a second polymer. In some embodiments, the second polymer is removed, thus forming a pattern comprising the first polymer and the spacers. In this manner, a method for forming a pattern during semiconductor fabrication is provided, such that a width of the spacer or the first polymer is controlled.

Abstract translation: 本文提供了一种或多种用于在半导体制造期间形成图案的技术或系统。 在一些实施例中，对光致抗蚀剂（PR）区域进行图案化，并且在图案化PR区域的至少一部分上方或周围形成间隔区域。 此外，除去间隔区域和图案化的PR区域中的至少一些以形成一个或多个间隔物。 此外，嵌段共聚物（BCP）填充在间隔物之间​​。 在一些实施方案中，BCP包含第一聚合物和第二聚合物。 在一些实施方案中，除去第二聚合物，从而形成包含第一聚合物和间隔物的图案。 以这种方式，提供了在半导体制造期间形成图案的方法，使得间隔物或第一聚合物的宽度受到控制。

公开(公告)号：US20150034593A1

公开(公告)日：2015-02-05

申请号：US14447376

申请日：2014-07-30

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Tasuku Matsumiya ,  Takehiro Seshimo ,  Ken Miyagi ,  Takaya Maehashi ,  Takahiro Dazai ,  Yoshiyuki Utsumi

IPC: B05D3/10 ,  B05D3/02 ,  B05D3/14 ,  B05D1/36

CPC classification number: C08L53/00 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  B82B3/00 ,  C09D153/00

Abstract: A method of producing a structure containing a phase-separated structure, including: forming a layer including a neutralization film on a substrate; forming a layer containing a block copolymer on the layer including the neutralization film, the PA block and PB block being mutually bonded in the block copolymer, and the PB block including a structural unit other than a structural unit constituting the PA block; and subjecting the layer containing the block copolymer to an annealing treatment, such that, in the case where a surface free energy of the PA block, a surface free energy of the PB block and a surface free energy of the neutralization film are represented by a coordinate point A of the PA block, a coordinate point B of the PB block and a coordinate point N of the neutralization film, respectively in the plane of coordinates, the coordinate point N of the neutralization film is within the predetermined range.

Abstract translation: 一种制造包含相分离结构的结构的方法，包括：在基板上形成包含中和膜的层; 在包含中和膜的层上形成包含嵌段共聚物的层，PA嵌段和PB嵌段相互结合在嵌段共聚物中，PB组分包括构成PA嵌段的结构单元以外的结构单元; 并使含有嵌段共聚物的层进行退火处理，使得在PA嵌段的表面自由能，PB嵌段的表面自由能和中和膜的表面自由能由 PA块的坐标点A，PB块的坐标点B和中和膜的坐标点N分别在坐标平面中，中和膜的坐标点N在预定范围内。

公开(公告)号：US20150011089A1

公开(公告)日：2015-01-08

申请号：US14202494

申请日：2014-03-10

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroshi Yamamoto ,  Tsubasa Imamura ,  Hisataka Hayashi ,  Mitsuhiro Omura

IPC: H01L21/308

CPC classification number: H01L21/3088 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816

Abstract: According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide.

Abstract translation: 根据一个实施例，图案形成方法包括在下层之上形成层。 该层包括嵌段共聚物。 该方法还包括通过相分离嵌段共聚物形成包含第一聚合物和第二相包含第二聚合物的第一相，并且通过使用包括一氧化碳的蚀刻气体干蚀刻该层来选择性地除去第一相。

公开(公告)号：US20140370717A1

公开(公告)日：2014-12-18

申请号：US13918794

申请日：2013-06-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： VIDHYA CHAKRAPANI ,  AKITERU KO ,  KAUSHIK KUMAR

IPC: H01L21/311

CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/12

Abstract: Provided is a method for preparing a patterned directed self-assembly layer, comprising: providing a substrate having a block copolymer layer comprising a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer; and performing an etching process to selectively remove the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the surface of the substrate, the etching process being performed at a substrate temperature less than or equal to about 20 degrees C. The method further comprises providing a substrate holder for supporting the substrate, the substrate holder having a first temperature control element for controlling a first temperature at a central region and second temperature control element at an edge region of the substrate and setting a target value for the first and the second temperature.

Abstract translation: 提供了一种制备图案化定向自组装层的方法，包括：提供具有嵌段共聚物层的基材，所述嵌段共聚物层包含在嵌段共聚物层中限定第一图案的第一相分离聚合物和限定第二相分离聚合物的第二相分离聚合物 嵌段共聚物层中的图案; 并且执行蚀刻工艺以选择性地除去第二相分离聚合物，同时留下基材表面上的第一相分离聚合物的第一图案，蚀刻工艺在小于或等于约20的衬底温度下进行 该方法还包括提供用于支撑衬底的衬底保持器，衬底保持器具有用于控制中心区域的第一温度的第一温度控制元件和在衬底的边缘区域处的第二温度控制元件，并且设置靶 第一和第二温度的值。

公开(公告)号：US20140353800A1

公开(公告)日：2014-12-04

申请号：US13603869

申请日：2012-09-05

Applicant: Michael A. GUILLORN ,  Steven J. HOLMES ,  Chi-Chun LIU ,  Hiroyuki MIYAZOE ,  Hsinyu TSAI

Inventor： Michael A. GUILLORN ,  Steven J. HOLMES ,  Chi-Chun LIU ,  Hiroyuki MIYAZOE ,  Hsinyu TSAI

IPC: H01L21/033 ,  H01L21/308

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

Abstract translation: 在衬底上设置有机平面化层（OPL）和模板层的叠层。 将模板层图案化以引起随后沉积的共聚物层的自组装。 共聚物层被沉积并退火以形成相分离的共聚物嵌段。 通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。 原始图案通过各向异性蚀刻转移到OPL中，并且去除第一相分离的聚合物和模板层。 在包含原始图案的图案化OPL上沉积旋涂电介质（SOD）材料层，以形成填充图案化OPL内的沟槽的SOD部分。 图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。

公开(公告)号：US20140349486A1

公开(公告)日：2014-11-27

申请号：US14455583

申请日：2014-08-08

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Dan Millward

IPC: H01L21/308 ,  C08J5/00

CPC classification number: H01L21/3083 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  C08J5/00 ,  C08J2353/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A main body of copolymer may be formed across a substrate, and self-assembly of the copolymer may be induced to form a pattern of structures across the substrate. A uniform thickness throughout the main body of the copolymer may be maintained during the inducement of the self-assembly. In some embodiments, the uniform thickness may be maintained through utilization of a wall surrounding the main body of copolymer to impede dispersal of the copolymer from the main body. In some embodiments, the uniform thickness may be maintained through utilization of a volume of copolymer in fluid communication with the main body of copolymer.

Abstract translation: 一些实施方案包括使用共聚物形成图案的方法。 共聚物的主体可以横跨基底形成，并且可以诱导共聚物的自组装以在基底上形成结构图案。 在自组装的诱导期间，可以保持整个共聚物主体的均匀厚度。 在一些实施方案中，通过利用围绕共聚物主体的壁阻止共聚物从主体的分散，可以维持均匀的厚度。 在一些实施方案中，可以通过使用与共聚物主体流体连通的一定体积的共聚物来维持均匀的厚度。

公开(公告)号：US20140335455A1

公开(公告)日：2014-11-13

申请号：US14341022

申请日：2014-07-25

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC ,  DOW GLOBAL TECHNOLOGIES LLC

Inventor： Peter Trefonas, III ,  Phillip Dene Hustad ,  Cynthia Pierre

IPC: G03F7/038 ,  C08F220/18 ,  C08F212/08

CPC classification number: G03F7/0388 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F212/08 ,  C08F220/18 ,  C08F297/026 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/11 ,  G03F7/165 ,  G03F7/26

Abstract: A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.

Abstract translation: 形成图案的方法包括将通过照射感光层的一部分形成的酸扩散到包含具有酸可分解基团的酸敏感共聚物和共价键合到基材表面的附着基团和/或形成互聚物交联的底层 。 扩散包括加热底层和感光层。 酸敏感基团与扩散的酸反应，在底层上形成具有图案形状的极性区域。 去除感光层，形成包含具有对极性区域具有亲和力的第一嵌段的嵌段共聚物的自组装层和对极性区域具有较小亲和性的第二嵌段。 第一块形成与极性区对准的域，并且第二块形成与第一块对准的另一域。 删除任一域暴露了底层的一部分。