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公开(公告)号：US08958138B2
公开(公告)日：2015-02-17
申请号：US13483095
申请日：2012-05-30
Applicant: Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
Inventor： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
CPC classification number: G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
Abstract: In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
Abstract translation: 在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括：显示面板，包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在所述至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。
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152.发明授权Planar cavity MEMS and related structures, methods of manufacture and design structures 有权平面腔MEMS及相关结构，制造方法和设计结构公开(公告)号：US08956903B2
公开(公告)日：2015-02-17
申请号：US12973147
申请日：2010-12-20
Applicant: Russell T. Herrin , Christopher V. Jahnes , Anthony K. Stamper , Eric J. White
Inventor： Russell T. Herrin , Christopher V. Jahnes , Anthony K. Stamper , Eric J. White
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.
Abstract translation: 形成至少一个微机电系统（MEMS）空腔的方法包括在布线层和基板上形成第一牺牲腔层。 该方法还包括在第一牺牲腔层上形成绝缘体层。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔的平坦表面。
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153.发明授权Planar cavity MEMS and related structures, methods of manufacture and design structures 有权平面腔MEMS及相关结构，制造方法和设计结构公开(公告)号：US08921144B2
公开(公告)日：2014-12-30
申请号：US12973333
申请日：2010-12-20
Applicant: George A. Dunbar, III , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper
Inventor： George A. Dunbar, III , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.
Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括形成用于形成下腔的较低牺牲材料。 该方法还包括通过将下腔体连接到上部空腔来形成空腔。 空腔通孔形成有圆形或倒角边缘的顶视图。 该方法还包括在空腔内部和上方形成上部牺牲材料，其具有基于空腔通路的轮廓的合成表面。 上空腔形成有没有会干扰MEMS梁的结构的盖，包括：在上牺牲材料的所得表面上沉积盖材料; 并且排出上部牺牲材料以形成上部空腔，使得盖子材料形成与上部牺牲材料的合成表面一致的盖子。
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154.发明申请PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权平面CAVITY MEMS及相关结构，制造方法和设计结构公开(公告)号：US20140166463A1
公开(公告)日：2014-06-19
申请号：US14184950
申请日：2014-02-20
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
IPC: H01H1/00
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。
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155.发明申请DETACHABLE COMPONENTS FOR SPACE-LIMITED APPLICATIONS THROUGH MICRO AND NANOTECHNOLOGY (DECAL-MNT) 审中-公开通过微观和纳米技术（DECAL-MNT）进行空间有限应用的可拆卸组件公开(公告)号：US20140049933A1
公开(公告)日：2014-02-20
申请号：US14000674
申请日：2012-02-24
Applicant: Hans-Heinrich Gatzen , Tim Griesbach
Inventor： Hans-Heinrich Gatzen , Tim Griesbach
CPC classification number: H05K1/0271 , B81B3/0072 , B81B2201/11 , B81C2201/0167 , H05K3/303 , Y10T29/49133
Abstract: The invention relates to space-saving micro- and nano-components and to methods for producing same. The components are characterized in that they do not comprise a rigid substrate having a considerable thickness. The mechanical stresses, which result in deformations and/or warpage within a component, are compensated by means of a mechanically stress-compensated design and/or by means of active mechanical stress compensation by depositing suitable stress compensation layers such that there is no need for relatively thick substrates. Thus, the overall thickness of the components is decreased and the integration options thereof in technical systems are improved. In addition, the field of application of such components is expanded.
Abstract translation: 本发明涉及节省空间的微米和纳米组分及其制备方法。 这些部件的特征在于它们不包括具有相当厚度的刚性基板。 导致部件内的变形和/或翘曲的机械应力通过机械应力补偿设计和/或借助于通过沉积合适的应力补偿层的有源机械应力补偿来补偿，使得不需要 相对厚的基材。 因此，组件的总体厚度减小，并且其技术系统中的集成选项得到改善。 此外，这些组件的应用领域也得到了扩展。
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Patent Agency Ranking
156.发明申请PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权平面CAVITY MEMS及相关结构，制造方法和设计结构公开(公告)号：US20130234265A1
公开(公告)日：2013-09-12
申请号：US13868147
申请日：2013-04-23
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Anthony K. Stamper , John G. Twombly
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
Abstract translation: 形成至少一个微电子机械系统（MEMS）的方法包括：对布线层进行图案化以形成至少一个固定板并在布线层上形成牺牲材料。 该方法还包括在至少一个固定板上形成一层或多层薄膜的绝缘体层，以及下层衬底的暴露部分，以防止在布线层和牺牲材料之间形成反应产物。 该方法还包括形成至少一个可在该至少一个固定板上移动的MEMS光束。 该方法还包括排出或剥离牺牲材料以形成至少第一腔。
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157.发明申请公开(公告)号：US20130062710A1
公开(公告)日：2013-03-14
申请号：US13230264
申请日：2011-09-12
Applicant: Alfons Dehe
Inventor： Alfons Dehe
CPC classification number: H04R7/125 , B81B2201/0257 , B81B2203/0127 , B81C1/00158 , B81C1/00476 , B81C2201/0167 , G01L9/0016 , H04R1/005 , H04R7/14 , H04R7/24 , H04R19/005 , H04R31/003 , H04R2201/003 , H04R2440/05
Abstract: A micro electrical mechanical system includes a membrane structure and a backplate structure. The backplate structure includes a backplate material and at least one pre-tensioning element mechanically connected to the backplate material. The at least one pre-tensioning element causes a mechanical tension on the backplate material for a bending deflection of the backplate structure in a direction away from the membrane structure.
Abstract translation: 微电气机械系统包括膜结构和背板结构。 背板结构包括背板材料和机械地连接到背板材料的至少一个预张紧元件。 所述至少一个预张紧元件在所述背板材料上引起机械张力，以使所述背板结构沿远离所述膜结构的方向弯曲偏转。
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公开(公告)号：US20120307334A1
公开(公告)日：2012-12-06
申请号：US13483095
申请日：2012-05-30
Applicant: Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
Inventor： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
CPC classification number: G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
Abstract: In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
Abstract translation: 在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括：显示面板，包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。
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公开(公告)号：US20120286903A1
公开(公告)日：2012-11-15
申请号：US13468052
申请日：2012-05-10
Applicant: Mika Prunnila , Antti Jaakkola , Tuomas Pensala
Inventor： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
CPC classification number: B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81C2201/0164 , B81C2201/0167 , B81C2201/0177 , G06F17/5045 , H03H9/02448 , H03H9/2447 , H03H2009/2442
Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.
Abstract translation: 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 在区域的至少一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。 还公开了一种设计该设备的方法。
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160.发明申请PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权平面CAVITY MEMS及相关结构，制造方法和设计结构公开(公告)号：US20110316097A1
公开(公告)日：2011-12-29
申请号：US12973147
申请日：2010-12-20
Applicant: Russell T. HERRIN , Christopher V. JAHNES , Anthony K. STAMPER , Eric J. WHITE
Inventor： Russell T. HERRIN , Christopher V. JAHNES , Anthony K. STAMPER , Eric J. WHITE
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.
Abstract translation: 形成至少一个微机电系统（MEMS）空腔的方法包括在布线层和基板上形成第一牺牲腔层。 该方法还包括在第一牺牲腔层上形成绝缘体层。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔的平坦表面。
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