Abstract:
A multi-layer printed circuit board includes: a resin substrate including a plurality of laminated thermoplastic resin films; a thin film resistor embedded in the resin substrate; and an electrode disposed on the thin film resistor. The thermoplastic resin film includes a conductive pattern made of metallic film. The electrode is covered with the conductive pattern disposed over or under the electrode.
Abstract:
A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.
Abstract:
The present invention provides a manufacturing method of an electronic circuit device including a multi-layer circuit board incorporated with a thin film capacitor small in size and of high performance capable of attaining higher capacitance value with a thin dielectric film of high dielectric constant and with favorable film quality. A first electrode layer and a thin film dielectric layer are laminated continuously in this order in one identical to laminate each of the layers on a leveled substrate in one identical chamber and then the first electrode layer is fabricated a conductor pattern.
Abstract:
The present invention relates to a thin film circuit board device having passive elements in wiring layers. The thin film circuit board device includes a base board (2) and a circuit part (3) including insulating layers (11) and (16) and pattern wiring (14) and (17) formed on a build-up forming surface (2a). On the first insulating layer (11), a receiving electrode part (21) is formed and the passive elements electrically connected to the receiving electrode part (21) are formed. In the circuit part (3), a substrate titanium film and a substrate film are laminated so as to cover the receiving electrode part (21) and the passive elements respectively. The substrate film and the substrate titanium film in areas in which a metallic film is not formed are etched through the metallic film serving as the first pattern wiring (14) formed on the substrate film as a mask. Thus, a substrate layer (23) and a substrate titanium layer (22) are formed. Consequently, the substrate titanium film serving as the substrate titanium layer (22) prevents the corrosion of the receiving electrode part and the respective passive elements due to etching liquid to form the passive elements with high performance.
Abstract:
A circuit board is manufactured by filling a via-hole formed in an insulating substrate with conductive material, disposing conductive layers on both sides of the insulating substrate, and forming alloy of component material of the conductive material with component material of the conductive layers. In the circuit board, therefore, the conductive material filled in the via-hole formed in the insulating substrate is securely connected electrically as well as mechanically to the conductive layers on both sides of the insulating substrate with high reliability.
Abstract:
A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.
Abstract:
A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.
Abstract:
A system and method for the fabrication of high reliability capacitors (1011), inductors (1012), and multi-layer interconnects (1013) (including resistors (1014)) on various thin film hybrid substrate surfaces (0501) is disclosed. The disclosed method first employs a thin metal layer (0502) deposited and patterned on the substrate (0501). This thin patterned layer (0502) is used to provide both lower electrodes for capacitor structures (0603) and interconnects (0604) between upper electrode components. Next, a dielectric layer (0705) is deposited over the thin patterned layer (0502) and the dielectric layer (0705) is patterned to open contact holes (0806) to the thin patterned layer. The upper electrode layers (0907, 0908, 1009, 1010) are then deposited and patterned on top of the dielectric (0705).
Abstract:
A method of fabricating a thermal conductive plug of a ceramic substrate of a multi-chip package. A plurality of conductive openings and thermal conductive openings are formed on green tapes. A metal paste is filled into the conductive openings and the thermal conductive openings. The green tapes are stacked together so that the metal paste inside the conductive openings and the thermal conductive openings of every green tape is in contact respectively with its neighboring metal paste within the conductive openings and thermal conductive openings of the green tapes. Cofire those green tapes and the metal paste to form a pre-substrate. The pre-substrate comprises an insulating structure, a plurality of thermal conductive plugs and conductive plugs.
Abstract:
A system for interconnecting a set of device chips by means of an array of microjoints disposed on an interconnect carrier is taught. The carrier is provided with a dense array of microjoint receptacles with an adhesion layer, barrier layer and a noble metal layer; the device wafers are fabricated with an array of microjoining pads comprising an adhesion layer, barrier layer and a fusible solder layer with pads being located at matching locations in reference to the barrier receptacles; said device chips are joined to said carrier through the microjoint arrays resulting in interconnections capable of very high input/output density and inter-chip wiring density.