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    MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME
    161.
    发明申请
    MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    MEMS器件及其制造方法

    公开(公告)号：US20150274509A1

    公开(公告)日：2015-10-01

    申请号：US14643388

    申请日：2015-03-10

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Takahiko YOSHIZAWA

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0041 ,  B81B3/0078 ,  B81B2201/0271 ,  B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0172

    Abstract: A present MEMS device includes: a structural member that is provided on a surface of a substrate and forms a cavity surrounding a functional element; a first layer in which an opening is formed in a predetermined position, the first layer covering a part of the cavity in such a manner that a gap is present between the first layer and the functional element; a second layer in which an opening is formed in a position corresponding to the predetermined position, the second layer being provided on a surface of the first layer; and a sealing portion that is provided on a surface of the second layer across a range broader than the opening of the first layer and the opening of the second layer, and seals at least the opening of the second layer.

    Abstract translation: 本MEMS装置包括：结构构件，其设置在基板的表面上并形成围绕功能元件的空腔; 第一层，其中开口形成在预定位置，第一层以这样的方式覆盖空腔的一部分，使得在第一层和功能元件之间存在间隙; 第二层，其中开口形成在与所述预定位置相对应的位置，所述第二层设置在所述第一层的表面上; 以及密封部分，其在比第一层的开口和第二层的开口宽的范围上设置在第二层的表面上，并且至少密封第二层的开口。

    THROUGH-SILICON VIA (TSV)-BASED DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS
    162.
    发明申请
    THROUGH-SILICON VIA (TSV)-BASED DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS 有权
    通过硅胶（TSV）设备和相关技术和配置

    公开(公告)号：US20150255372A1

    公开(公告)日：2015-09-10

    申请号：US14203415

    申请日：2014-03-10

    Applicant: Telesphor Kamgaing

    Inventor： Telesphor Kamgaing

    IPC: H01L23/48 ,  H01L49/02 ,  B81B7/00 ,  H01L21/768

    CPC classification number: H01L23/481 ,  B81B2201/0271 ,  B81B2207/096 ,  B81C1/00246 ,  B81C1/00301 ,  H01L23/5228 ,  H01L23/642 ,  H01L23/647 ,  H01L25/0657 ,  H01L27/0694 ,  H01L28/20 ,  H01L28/60 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2924/15311

    Abstract: Embodiments of the present disclosure are directed toward through-silicon via (TSV)-based devices and associated techniques and configurations. In one embodiment, an apparatus includes a die having active circuitry disposed on a first side of the die and a second side disposed opposite to the first side, a bulk semiconductor material disposed between the first side and the second side of the die and a device including one or more of a capacitor, resistor or resonator disposed in the bulk semiconductor material, the capacitor, resistor or resonator including one or more TSV structures that extend through the bulk semiconductor material, an electrically insulative material disposed in the one or more TSV structures and an electrode material or resistor material in contact with the electrically insulative material within the one or more TSV structures.

    Abstract translation: 本公开的实施例涉及基于硅通孔（TSV）的器件及相关技术和配置。 在一个实施例中，一种装置包括具有设置在管芯的第一侧上的有源电路和与第一侧相对设置的第二侧的管芯，设置在管芯的第一侧和第二侧之间的体半导体材料， 包括设置在体半导体材料中的电容器，电阻器或谐振器中的一个或多个，包括延伸穿过体半导体材料的一个或多个TSV结构的电容器，电阻器或谐振器，设置在一个或多个TSV结构中的电绝缘材料 以及与一个或多个TSV结构内的电绝缘材料接触的电极材料或电阻材料。

    TEMPERATURE COMPENSATED OSCILLATOR AND CONTROL METHOD THEREOF
    163.
    发明申请
    TEMPERATURE COMPENSATED OSCILLATOR AND CONTROL METHOD THEREOF 审中-公开
    温度补偿振荡器及其控制方法

    公开(公告)号：US20150214957A1

    公开(公告)日：2015-07-30

    申请号：US14219009

    申请日：2014-03-19

    Applicant: HARMONY ELECTRONICS CORP.

    Inventor： Hsin-Hung LI ,  Shui-Yuan HSIEH

    IPC: H03L1/02 ,  B81B7/00 ,  H03B5/30

    CPC classification number: H03L1/022 ,  B81B7/0087 ,  B81B2201/0271 ,  H03H9/02448 ,  H03H9/08 ,  H03H9/2452

    Abstract: A temperature compensated oscillator and a control method are provided. The oscillator includes a Micro Electro Mechanical Systems (MEMS) resonator group, a heating device, and a controller. The MEMS resonator group includes a first MEMS resonator and a second MEMS resonator. The first MEMS resonator outputs a main oscillation frequency according to a control signal. The second MEMS resonator outputs an auxiliary oscillation frequency according to a temperature of the second MEMS resonator. The heating device increases a temperature of the MEMS resonator group. The controller controls the heating device according to a difference between the main oscillation frequency and the auxiliary oscillation frequency. In the control method, at first, the MEMS resonator group is provided. Thereafter, a frequency difference between the main oscillation frequency and the auxiliary oscillation frequency is calculated. Then, the temperature of the MEMS resonator group is controlled according to the frequency difference.

    Abstract translation: 提供温度补偿振荡器和控制方法。 振荡器包括微机电系统（MEMS）谐振器组，加热装置和控制器。 MEMS谐振器组包括第一MEMS谐振器和第二MEMS谐振器。 第一MEMS谐振器根据控制信号输出主振荡频率。 第二MEMS谐振器根据第二MEMS谐振器的温度输出辅助振荡频率。 加热装置增加了MEMS谐振器组的温度。 控制器根据主振荡频率和辅助振荡频率之间的差异来控制加热装置。 在控制方法中，首先提供MEMS谐振器组。 此后，计算主振荡频率和辅助振荡频率之间的频率差。 然后，根据频率差来控制MEMS谐振器组的温度。

    Microelectronic device and electronic apparatus
    165.
    发明授权
    Microelectronic device and electronic apparatus 有权
    微电子器件和电子设备

    公开(公告)号：US09083309B2

    公开(公告)日：2015-07-14

    申请号：US13297692

    申请日：2011-11-16

    Applicant: Yoko Kanemoto

    Inventor： Yoko Kanemoto

    IPC: H01L21/00 ,  H03H9/24 ,  B81B3/00 ,  B81C1/00 ,  H03H9/02

    CPC classification number: H03H9/2457 ,  B81B3/0013 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81C1/00968 ,  H03H2009/02511

    Abstract: A movable section located in a hollow portion covered with a wall and a first sealing layer which are on a substrate and the first sealing layer located in an area facing the movable section are provided, the movable section is located between the substrate and the first sealing layer, and at least part of the movable section and the first sealing layer is an electric conductor.

    Abstract translation: 设置在位于衬底上的覆盖有中空部分的空心部分和位于与可动部分相对的区域中的第一密封层的可移动部分位于衬底和第一密封件之间 层，并且可动部的至少一部分和第一密封层是电导体。

    METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING MEMS DEVICES AND INTEGRATED CIRCUITS ON OPPOSING SIDES OF SUBSTRATES, AND RELATED STRUCTURES AND DEVICES
    166.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING MEMS DEVICES AND INTEGRATED CIRCUITS ON OPPOSING SIDES OF SUBSTRATES, AND RELATED STRUCTURES AND DEVICES 有权
    形成包括MEMS器件的半导体结构的方法和基板对准面的集成电路及其相关结构和器件

    公开(公告)号：US20150191344A1

    公开(公告)日：2015-07-09

    申请号：US14416825

    申请日：2013-07-08

    Applicant: Soitec

    Inventor： Mariam Sadaka ,  Bernard Aspar ,  Chrystelle Lagahe Blanchard

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81B2201/0271 ,  B81B2207/012 ,  B81B2207/015 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00301 ,  B81C2203/0735 ,  B81C2203/0792 ,  H01L2224/16 ,  H03H9/10

    Abstract: Methods of forming semiconductor devices comprising integrated circuits and microelectromechanical system (MEMS) devices operatively coupled with the integrated circuits involve the formation of an electrically conductive via extending at least partially through a substrate from a first major surface of the substrate toward an opposing second major surface of the substrate, and the fabrication of at least a portion of an integrated circuit on the first major surface of the substrate. A MEMS device is provided on the second major surface of the substrate, and the MEMS device is operatively coupled with the integrated circuit using the at least one electrically conductive via. Structures and devices are fabricated using such methods.

    Abstract translation: 形成包括集成电路的半导体器件和与集成电路可操作耦合的微机电系统（MEMS）器件的方法包括形成导电通孔，该导电通孔至少部分地穿过衬底，从衬底的第一主表面向相对的第二主表面延伸 的衬底，以及在衬底的第一主表面上制造集成电路的至少一部分。 MEMS器件设置在衬底的第二主表面上，并且MEMS器件使用至少一个导电通孔与集成电路操作耦合。 使用这种方法制造结构和装置。

    MEMS Device with Sealed Cavity and Release Chamber and Related Double Release Method
    167.
    发明申请
    MEMS Device with Sealed Cavity and Release Chamber and Related Double Release Method 有权
    具有密封腔和释放室的MEMS器件及相关的双重释放方法

    公开(公告)号：US20150158721A1

    公开(公告)日：2015-06-11

    申请号：US14508673

    申请日：2014-10-07

    Applicant: Newport Fab, LLC dba Jazz Semiconductor

    Inventor： Michael J. DeBar ,  David J. Howard

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00293 ,  B81B2201/0221 ,  B81B2201/0271 ,  B81C2203/0145

    Abstract: Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.

    Abstract translation: 公开了具有具有相似压力和/或类似气体化学性质的下部，上部和释放室的MEMS器件。 MEMS器件包括顶部MEMS板和底部MEMS板。 MEMS器件还包括在底部MEMS板和顶部MEMS板之间的下腔室，以及位于顶部MEMS板和第一密封层之间的上腔室。 MEMS装置还包括在顶部MEMS板和第二密封层之间的释放室，释放室允许上部和/或下部腔室的气体含量被释放。 还公开了用于释放上部和/或下部室的气体含量的双重释放方法。

    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
    170.
    发明申请
    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
    共振传感器及其制造方法，以及谐振传感器的多层结构

    公开(公告)号：US20150028434A1

    公开(公告)日：2015-01-29

    申请号：US14336613

    申请日：2014-07-21

    Applicant: YOKOGAWA ELECTRIC CORPORATION

    Inventor： Takashi YOSHIDA ,  Shuuji OKUDA ,  Shigeto IWAI

    IPC: B81B3/00 ,  B81C1/00 ,  B81B7/02

    CPC classification number: B81B3/0021 ,  B81B3/0002 ,  B81B7/02 ,  B81B2201/0271 ,  B81B2201/0285 ,  B81C1/00198 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L1/14 ,  G01N29/12 ,  G01N2291/014 ,  G01N2291/02827 ,  H01L41/094 ,  H03H3/0072 ,  H03H9/2463

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

    Abstract translation: 谐振换能器包括硅单晶衬底，设置在硅单晶衬底上的硅单晶谐振器，由硅构成的外壳，围绕谐振器间隙，并与硅单晶衬底一起形成腔室，令人兴奋的 模块，其被配置为激励所述谐振器;振动检测模块，被配置为检测所述谐振器的振动，设置在所述腔室上的第一层，所述第一层具有通孔，设置在所述第一层上的第二层， 第一层和第二层，以及从第二层朝向谐振器延伸的突起，突起与谐振器在空间上分离，突起与第一层隔开第一间隙，第二层与第一层分离 通过第二间隙，第一间隙与第二间隙连通。

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