公开(公告)号：US20140048922A1

公开(公告)日：2014-02-20

申请号：US14059662

申请日：2013-10-22

Applicant: DENSO CORPORATION

Inventor： Masaya TANAKA ,  Tetsuo FUJII

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/498 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2207/095 ,  B81C2203/0118 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76898 ,  H01L21/84 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L27/1203 ,  H01L2224/04042 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate Wand extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.

Abstract translation: 半导体器件包括由硅制成的基底衬底，帽基底和具有金属部分的引导电极。 基底基板具有在其表面层的预定部分彼此绝缘和分离的基底半导体区域。 盖基板结合到基底基板的表面层的预定部分。 引导电极具有连接到基底基板的多个基底半导体区域中的一个的第一端，并且穿过盖衬底延伸，使得引导电极的第二端邻近盖衬底的表面定位，以允许电气 与外部部分的连接，该表面与基底基底和盖基底接合的接合表面相对。 引导电极在其外表面和盖基板之间限定凹槽。

公开(公告)号：US20140021515A1

公开(公告)日：2014-01-23

申请号：US13942744

申请日：2013-07-16

Applicant: Robert Bosch GmbH

Inventor： Johannes Classen ,  Miko Hattass ,  Lars Tebje ,  Daniel Christoph Meisel

IPC: B81B7/00

CPC classification number: B81B7/008 ,  B81B2201/0235 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  B81C2203/0792 ,  G01P2015/0877

Abstract: A micromechanical structure, in particular a sensor arrangement, includes at least one micromechanical functional layer, a CMOS substrate region arranged below the at least one micromechanical functional layer, and an arrangement of one or more contact elements. The CMOS substrate region has at least one configurable circuit arrangement. The arrangement of one or more contact elements is arranged between the at least one micromechanical functional layer and the CMOS substrate region and is electrically connected to the micromechanical functional layer and the circuit arrangement. The configurable circuit arrangement is designed in such a way that the one or more contact elements are configured to be selectively connected to electrical connection lines in the CMOS substrate region.

Abstract translation: 微机械结构，特别是传感器装置，包括至少一个微机械功能层，布置在至少一个微机械功能层下方的CMOS衬底区域以及一个或多个接触元件的布置。 CMOS衬底区域具有至少一个可配置电路布置。 一个或多个接触元件的布置被布置在至少一个微机械功能层和CMOS衬底区域之间，并且电连接到微机械功能层和电路装置。 可配置电路布置被设计成使得一个或多个接触元件被配置为选择性地连接到CMOS衬底区域中的电连接线。

公开(公告)号：US08616059B2

公开(公告)日：2013-12-31

申请号：US13045934

申请日：2011-03-11

Applicant: Arnaud Walther ,  Guillaume Jourdan ,  Philippe Robert

Inventor： Arnaud Walther ,  Guillaume Jourdan ,  Philippe Robert

IPC: G01P15/097

CPC classification number: G01P15/123 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2203/0163 ,  B81B2203/051 ,  G01P15/0802

Abstract: A MEMS or NEMS device for detecting a force following a given direction, comprising a support and at least one seismic mass capable of moving under the effect of the force to be measured in the direction of the force, and a detector for detecting the movement of the seismic mass, the seismic mass being articulated relative to the support by at least one pivot link, and an actuator capable of varying the distance between the axis of the pivot link and the center of gravity of the exertion of the force on the seismic mass.

Abstract translation: 一种用于检测沿给定方向的力的MEMS或NEMS装置，包括支撑件和能够在力的方向上在待测量的力的作用下移动的至少一个地震块;以及检测器，用于检测 地震质量，相对于支撑件通过至少一个枢转连杆铰接的地震质量，以及能够改变枢轴连杆的轴线与地震质量上的力的重心之间的距离的致动器 。

公开(公告)号：US20130333471A1

公开(公告)日：2013-12-19

申请号：US13523101

申请日：2012-06-14

Applicant: Yu-Tsun Chien

Inventor： Yu-Tsun Chien

IPC: G01P15/125

CPC classification number: G01P15/125 ,  B81B2201/0235 ,  B81C1/00238 ,  G01P15/0802 ,  G01P2015/0831 ,  G01P2015/0837

Abstract: In a teeter-totter type MEMS accelerometer, the teeter-totter proof mass and the bottom set of electrodes (i.e., underlying the proof mass) are formed on a device wafer, while the top set of electrodes (i.e., overlying the teeter-totter proof mass) are formed on a circuit wafer that is bonded to the device wafer such that the top set of electrodes overlie the teeter-totter proof mass. The electrodes formed on the circuit wafer may be formed from an upper metallization layer on the circuit wafer, which also may be used to form various electrical connections and/or bond pads.

Abstract translation: 在跷跷板型MEMS加速度计中，在装置晶片上形成了跷跷板质量和底部电极组（即，证明质量下方），而顶部电极组（即覆盖跷跷板 形成在与器件晶片接合的电路晶片上，使得顶部电极组覆盖在跷跷板证明质量块上。 形成在电路晶片上的电极可以由电路晶片上的上金属化层形成，其也可以用于形成各种电连接和/或接合焊盘。

公开(公告)号：US08592285B2

公开(公告)日：2013-11-26

申请号：US13513055

申请日：2009-12-11

Applicant: Naoki Noda ,  Toshio Yokouchi ,  Masahiro Ishimori

Inventor： Naoki Noda ,  Toshio Yokouchi ,  Masahiro Ishimori

IPC: H01L29/84

CPC classification number: B81C1/00269 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K2101/40 ,  B81B2201/0235 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035

Abstract: A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.

Abstract translation: 接合半导体衬底的方法具有加压和加热的步骤，通过共晶接合将基板11与基板12接合，在基板11的接合部分30a和基板11的接合部分30a之间的含铝层32和锗层32的状态 覆盖基板21的接合部30b，锗层32的外端32a相对于含铝层31的外端31a向内侧退缩。

公开(公告)号：US08564077B2

公开(公告)日：2013-10-22

申请号：US12643391

申请日：2009-12-21

Applicant: Akinori Shiraishi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Yuichi Taguchi ,  Mitsutoshi Higashi

Inventor： Akinori Shiraishi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Yuichi Taguchi ,  Mitsutoshi Higashi

IPC: H01L29/84 ,  H01L23/52 ,  H01L21/50

CPC classification number: G01P1/023 ,  B81B7/0074 ,  B81B2201/0235 ,  G01D11/245 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15156 ,  H01L2924/153 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A package for electronic component comprises a rectangular package body having a flat cut surface to be abutted on a flat mounting surface of a mounting substrate, a first side surface intersecting with the flat cut surface, and a first notch part formed at a boundary between the flat cut surface and the first side surface, an electronic component installed in the package body, and a first pad electrically connected to the electronic component and formed on an inner wall surface of the first notch part.

Abstract translation: 一种电子部件用包装体，具有矩形包装体，该矩形包装体具有与安装基板的平坦安装面抵接的平坦切割面，与该平坦切断面交叉的第一侧面，以及形成在上述 平切面和第一侧表面，安装在封装主体中的电子部件，以及电连接到电子部件并形成在第一凹口部分的内壁表面上的第一焊盘。

公开(公告)号：US08525278B2

公开(公告)日：2013-09-03

申请号：US13213863

申请日：2011-08-19

Applicant: Chia-Hua Chu ,  Chung-Hsien Lin

Inventor： Chia-Hua Chu ,  Chung-Hsien Lin

IPC: H01L27/20 ,  H01L21/98

CPC classification number: B81C1/00238 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  H01L23/10 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05558 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11622 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/16145 ,  H01L2224/73257 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81065 ,  H01L2224/81203 ,  H01L2224/81805 ,  H01L2224/8182 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1437 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2224/05552

Abstract: A method and device having chip scale MEMS packaging is described. A first substrate includes a MEMS device and a second substrate includes an integrated circuit. The frontside of the first substrate is bonded to the backside of the second substrate. Thus, the second substrate provides a cavity to encase, protect or operate the MEMS device within. The bond may provide an electrical connection between the first and second substrate. In an embodiment, a through silicon via is used to carry the signals from the first substrate to an I/O connection on the frontside of the second substrate.

Abstract translation: 描述了具有芯片级MEMS封装的方法和装置。 第一衬底包括MEMS器件，第二衬底包括集成电路。 第一衬底的前侧结合到第二衬底的背面。 因此，第二衬底提供了一个空腔来封装，保护或操作其中的MEMS器件。 该键可以在第一和第二衬底之间提供电连接。 在一个实施例中，穿通硅通孔用于将信号从第一衬底传送到第二衬底的前侧上的I / O连接。

公开(公告)号：US08516891B2

公开(公告)日：2013-08-27

申请号：US12015105

申请日：2008-01-16

Applicant: Xin Zhang ,  Michael W. Judy

Inventor： Xin Zhang ,  Michael W. Judy

IPC: G01P15/02 ,  G01P15/125

CPC classification number: B81B3/0051 ,  B81B2201/0235 ,  B81B2201/0242

Abstract: A MEMS sensing system includes a movable mass having at least one contact surface, a stopper system for stopping the movement of the mass, the stopper system having at least one contact surface that contacts a corresponding contact surface of the mass if a sufficient movement of the mass occurs in a direction, at least one stopper gap formed between the at least one contact surface of the stopper system and the corresponding contact surface of the mass, and a spring system in communication with the at least one stopper gap.

Abstract translation: MEMS感测系统包括具有至少一个接触表面的可移动的质量块，用于阻止物料的运动的止动器系统，止动器系统具有至少一个接触表面，该接触表面与物体的相应的接触表面相接触， 质量发生在一个方向上，形成在止动器系统的至少一个接触表面和物体的相应接触表面之间的至少一个止动器间隙以及与至少一个止动器间隙连通的弹簧系统。

公开(公告)号：US20130209672A1

公开(公告)日：2013-08-15

申请号：US13763223

申请日：2013-02-08

Applicant: Jochen REINMUTH ,  Frank SCHNELL ,  Heribert WEBER ,  Erhard HIRTH ,  Yvonne BERGMANN

Inventor： Jochen REINMUTH ,  Frank SCHNELL ,  Heribert WEBER ,  Erhard HIRTH ,  Yvonne BERGMANN

IPC: H05K3/00

CPC classification number: H05K3/0094 ,  B81B2201/0235 ,  B81B2207/096 ,  B81C1/00301 ,  H01L21/743 ,  H01L21/76898 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2924/1461 ,  H05K3/4061 ,  H05K2201/09563 ,  H01L2924/00

Abstract: A method for manufacturing a component having a through-connection. The method includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, and introducing into the recess a pourable starting material which has a metal. The method furthermore includes carrying out a heating process, an electrically conductive structure forming the through-connection being developed from the pourable starting material.

Abstract translation: 一种用于制造具有通过连接的部件的方法。 该方法包括提供半导体衬底，在半导体衬底中形成凹陷，并将具有金属的可倾倒起始材料引入凹槽中。 该方法还包括进行加热过程，形成从可倾倒起始材料形成的贯通连接的导电结构。

公开(公告)号：US20130205895A1

公开(公告)日：2013-08-15

申请号：US13397318

申请日：2012-02-15

Applicant: Brian Lee Wardle ,  Fabio Ferrucci Fachin ,  Stefan Nikles ,  Matthew Varghese

Inventor： Brian Lee Wardle ,  Fabio Ferrucci Fachin ,  Stefan Nikles ,  Matthew Varghese

IPC: G01P15/00 ,  H05K13/04

CPC classification number: B81C1/00007 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81C1/00142 ,  B81C1/00158 ,  B81C1/0019 ,  G01P15/00 ,  G01P15/008 ,  G01P15/0802 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.