公开(公告)号：USD1073328S1

公开(公告)日：2025-05-06

申请号：US29881098

申请日：2022-12-28

Applicant: GUANGZHOU ISSYZONE TECHNOLOGY CO., LIMITED

Designer： Taiping Yang ,  Ning Wang ,  Guoyuan Lin

公开(公告)号：US12295165B2

公开(公告)日：2025-05-06

申请号：US18661741

申请日：2024-05-13

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： Han-Chin Chiu

IPC: H10D64/00 ,  H10D30/01 ,  H10D30/47 ,  H10D62/85

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The conductive layer is disposed on the second nitride semiconductor layer. The conductive layer has a first length extending in a first direction substantially parallel to the first surface of the substrate, a second length extending in a second direction substantially perpendicular to the first direction—from a cross section view perspective—wherein the second length is greater than the first length.

公开(公告)号：US12293804B2

公开(公告)日：2025-05-06

申请号：US18266610

申请日：2022-04-20

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui Miao ,  Jiawei Fu ,  Yuhui He

IPC: G11C5/02 ,  G06N3/0464 ,  G11C5/06 ,  G06N3/045 ,  G06N3/063

Abstract: The disclosure provides a convolution operation accelerator and a convolution operation method and belongs to the field of microelectronic devices. Input data of each word line may be subjected to a multiply-accumulate operation together with two upper and lower layers of convolution kernel units, so that natural sliding of the convolution kernel units in a y direction in two-dimensional input is achieved. The oblique bit lines and multiple copies of a convolution kernel in each layer of a non-volatile memory array may enable a multiplication operation between one piece of input data and convolution kernel data at different positions in the same convolution kernel. In this way, the natural sliding of the convolution kernel units in an x direction in the two-dimensional input is achieved.

公开(公告)号：US12292825B2

公开(公告)日：2025-05-06

申请号：US17726474

申请日：2022-04-21

Applicant: PHISON ELECTRONICS CORP.

Inventor： Sheng-Min Huang ,  Shih-Ying Song

IPC: G06F12/02 ,  G06F13/16

Abstract: A memory control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: generating a first operation command via one of a plurality of processing circuits, wherein the first operation command instructs to access a first memory group in a plurality of memory groups; and in response to a first state information, sending a first command sequence to the first memory group according to the first operation command to instruct the first memory group to perform an access operation. The first state information reflects a first activation state of the plurality of memory groups, and the first command sequence does not include a control command sequence configured to activate the first memory group.

公开(公告)号：US12292705B2

公开(公告)日：2025-05-06

申请号：US17880636

申请日：2022-08-03

Applicant: FUJIFILM Business Innovation Corp.

Inventor： Akira Shimodaira ,  Satoshi Tejima

IPC: G03G15/16 ,  G03G15/01

Abstract: An image forming apparatus includes a conveyance unit conveying a recording medium in contact with the recording medium's one surface along a conveyance path, a first image forming group, a second image forming group, a first intermediate transfer body being transferred a toner image formed by the first image forming group, a second intermediate transfer body being transferred a toner image formed by the second image forming group, a first transfer unit transferring the toner image from the first intermediate transfer body to the recording medium's other surface, and a second transfer unit transferring the toner image from the second intermediate transfer body to the recording medium's other surface. The first image forming group, the first intermediate transfer body, the second intermediate transfer body, and the second image forming group are located the other surface side of the recording medium in this order in a conveyance direction.

公开(公告)号：US12292674B2

公开(公告)日：2025-05-06

申请号：US17534416

申请日：2021-11-23

Applicant: Coretronic Corporation

Inventor： Pei-Rong Wu ,  Shi-Wen Lin

IPC: G03B21/16 ,  G02B6/42 ,  H05K7/20

Abstract: A heat dissipation module, configured for heat dissipation of at least one first heat source and at least one second heat source, and including a first heat sink, a second heat sink, a first pipe, and a second pipe, is provided. The first heat sink and the first heat source are connected to each other through the first pipe to form a first loop, so that a liquid medium flows through the first heat sink for heat exchange and then flows to the first heat source for circulating heat dissipation. The second heat sink and the second heat source are connected to each other through the second pipe to form a second loop, so that the liquid medium flows through the second heat sink for heat exchange and then flows to the second heat source for circulating heat dissipation. A projection device, including the heat dissipation module, is also provided.

公开(公告)号：US12289901B2

公开(公告)日：2025-04-29

申请号：US17380043

申请日：2021-07-20

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Yi-Lun Chou ,  Kye Jin Lee ,  Han-Chin Chiu ,  Xiuhua Pan

IPC: H10D30/47 ,  H01L23/31 ,  H10D62/17 ,  H10D62/824 ,  H10D62/85 ,  H10D62/854 ,  H01L23/29

Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is less than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.

公开(公告)号：US12289893B2

公开(公告)日：2025-04-29

申请号：US17740369

申请日：2022-05-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Chieh Lu ,  Qing Shi ,  Bo-Feng Young ,  Yu-Chuan Shih ,  Sai-Hooi Yeong ,  Blanka Magyari-Kope ,  Ying-Chih Chen ,  Tzer-Min Shen ,  Yu-Ming Lin ,  Chung-Te Lin

IPC: H10B53/30 ,  H01L29/78 ,  H10B53/10 ,  H10B53/20

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

公开(公告)号：US12289866B2

公开(公告)日：2025-04-29

申请号：US18297662

申请日：2023-04-10

Applicant: Acer Incorporated

Inventor： Yu-Ming Lin ,  Wen-Neng Liao ,  Cheng-Wen Hsieh ,  Shu-Hao Kuo ,  Tsung-Ting Chen

IPC: H05K7/20 ,  G06F1/18 ,  G06F1/20

Abstract: A graphics card including a circuit board module, a first heat dissipation fin, and a pair of fans is provided. The circuit board module includes a circuit board and a heat source. The circuit board has first to fourth sides surrounding the heat source. The first and second sides are opposite sides. The third and fourth sides are opposite sides. The first heat dissipation fin is in thermal contact with the heat source and has multiple channels communicating with the first to fourth sides. The fans disposed on the first and second sides respectively have first flow outlets facing the first heat dissipation fin and generate flows towards the first heat dissipation fin through the first flow outlets. The flows meet and squeeze in the channels to form turbulent flows and flow out of the graphics card through the third and fourth sides respectively. A computer host is also provided.

公开(公告)号：US12288975B2

公开(公告)日：2025-04-29

申请号：US17750415

申请日：2022-05-23

Applicant: Innolux Corporation

Inventor： Ming-Chun Tseng ,  Min-Hsin Lo ,  Hung-Sheng Liao ,  Chi-Lun Kao

IPC: H02H7/20 ,  H03K3/012

Abstract: The disclosure provides an electronic device including a driver circuit and a driving method thereof. The driver circuit includes an electronic unit, a driver unit, and a detection and protection circuit. The driver unit is electrically connected to the electronic unit. The detection and protection circuit is electrically connected to the electronic unit through a first node, and is electrically connected to a gate terminal of the driver unit through a second node. When a voltage of the first node is pulled down, the detection and protection circuit controls the driver unit to be turned off. The detection and protection circuit of the driver circuit of the disclosure protects the electronic unit from excessive current.