公开(公告)号：US08499468B2

公开(公告)日：2013-08-06

申请号：US12809180

申请日：2008-12-18

Applicant: Takahiro Watanabe ,  Kenichi Watanabe ,  Kenji Miyashita ,  Masahiro Jinbo

Inventor： Takahiro Watanabe ,  Kenichi Watanabe ,  Kenji Miyashita ,  Masahiro Jinbo

IPC: G01B1/00

CPC classification number: G01B21/20 ,  B24B47/225 ,  B24B49/02

Abstract: A relationship between a rim shape and a position of a mounting hole is obtained based on a detection signal from the second position detector (40) by controlling a measuring element shifter (6) to move the leading end of a measuring element for a lens (36) to have contact with an refracting face of the lens (Lm) held in the lens holder.

Abstract translation: 基于来自第二位置检测器（40）的检测信号，通过控制测量元件移位器（6）来移动用于透镜的测量元件的前端来获得边缘形状和安装孔的位置之间的关系（ 36）与保持在透镜保持器中的透镜（Lm）的折射面接触。

公开(公告)号：US08410613B2

公开(公告)日：2013-04-02

申请号：US13013103

申请日：2011-01-25

Applicant: Kenichi Watanabe

Inventor： Kenichi Watanabe

IPC: H01L23/522

CPC classification number: H01L21/76877 ,  H01L21/76804 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53204 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/562 ,  H01L23/58 ,  H01L23/585 ,  H01L29/0607 ,  H01L29/0611 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract translation: 半导体器件具有形成在衬底10上的绝缘膜40,42; 埋置在绝缘膜40,42的至少表面侧的互连件58; 绝缘膜60,62形成在绝缘膜42上并且包括孔形通孔60和具有以直角弯曲的图案的槽形通孔66a; 以及埋入孔形通孔60和槽形通孔66a中的埋入导体70,72a。 形成沟槽状的通孔66a的宽度小于孔状通孔66的宽度。可以防止埋入导体的填充不充分和层间绝缘膜的开裂。 导体插头上的步骤可以减少。 因此，可以防止与上部互连层的不良接触以及在形成膜中发生的问题。

公开(公告)号：US20120316025A1

公开(公告)日：2012-12-13

申请号：US13483581

申请日：2012-05-30

Applicant: Kazuo Oguri ,  Kenichi Watanabe ,  Takayoshi Urushibata

Inventor： Kazuo Oguri ,  Kenichi Watanabe ,  Takayoshi Urushibata

IPC: F16H3/46

CPC classification number: F16H3/663 ,  F16H2003/445 ,  F16H2200/0043 ,  F16H2200/2005 ,  F16H2200/2023 ,  F16H2200/2043

Abstract: An automatic transmission including a Ravigneaux planetary gear unit, an input member, an output member disposed on one side of the Ravigneaux planetary gear unit, five friction elements disposed on the other side of the Ravigneaux planetary gear unit, and a partition member cooperating with an automatic transmission case to define a transmission chamber in which the output member, the Ravigneaux planetary gear unit, and the respective friction elements are accommodated. The output member is supported on a cylindrical portion extending from the partition member toward the Ravigneaux planetary gear unit in an axial direction of the input member.

Abstract translation: 一种自动变速器，包括：Ravigneaux行星齿轮单元，输入构件，设置在Ravigneaux行星齿轮单元一侧的输出构件，设置在Ravigneaux行星齿轮单元另一侧的五个摩擦元件，以及与 自动变速箱以限定传动室，其中输出构件，拉维尼行星齿轮单元和相应的摩擦元件被容纳在其中。 输出构件被支撑在沿着输入构件的轴向方向从分隔构件向拉维尼亚行星齿轮单元延伸的圆柱形部分上。

公开(公告)号：US20120261833A1

公开(公告)日：2012-10-18

申请号：US13483044

申请日：2012-05-29

Applicant: Kenichi WATANABE ,  Tomoji NAKAMURA ,  Satoshi OTSUKA

Inventor： Kenichi WATANABE ,  Tomoji NAKAMURA ,  Satoshi OTSUKA

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes first and second conductor patterns embedded in a first interlayer insulation film and a third conductor pattern embedded in a second interlayer insulation film, the third conductor pattern including a main part and an extension part, the extension part being electrically connected to the first conductor pattern by a first via-plug, the extension part having a branched pattern closer to the main part compared with the first conductor pattern, the branched pattern making a contact with the second conductor pattern via a second via-plug, each of the main part, extension part including the branched pattern, first via-plug and second via-plug forming a damascene structure.

Abstract translation: 半导体器件包括嵌入在第一层间绝缘膜中的第一和第二导体图案以及嵌入在第二层间绝缘膜中的第三导体图案，所述第三导体图案包括主要部分和延伸部分，所述延伸部分电连接到 第一导体图案通过第一通孔插头，延伸部分具有与第一导体图案相比更靠近主要部分的分支图案，分支图案经由第二通孔插塞与第二导体图案接触，每个 主要部分，包括分支图案的延伸部分，第一通孔塞和形成镶嵌结构的第二通孔塞。

公开(公告)号：US08265820B2

公开(公告)日：2012-09-11

申请号：US12471560

申请日：2009-05-26

Applicant: Nobuo Hara ,  Kenichi Watanabe ,  Yasuhiro Oomura ,  Takafumi Nonaka

Inventor： Nobuo Hara ,  Kenichi Watanabe ,  Yasuhiro Oomura ,  Takafumi Nonaka

IPC: G01M17/00 ,  G06F7/00 ,  G06F11/30 ,  G06F19/00 ,  G07C5/00

CPC classification number: B60G3/14 ,  B60G21/007 ,  B60G2300/124 ,  B60G2300/45 ,  B62K5/10

Abstract: A saddle riding type vehicle includes a support mechanism arranged to support a pair of wheels to be movable up and down relative to a vehicle body, a lock mechanism connectable to the support mechanism and arranged to limit up-and-down motion of the pair of wheels, various sensors arranged to detect vehicle states, and a controller arranged to control the lock mechanism based on results of detection by the various sensors. The controller controls the lean limitation to the up-and-down motion of the pair of wheels and its cancellation automatically. The rider need not carry out a special control for operating the lock mechanism. In addition, the lock mechanism is controlled according to the vehicle states, which allows the rider to travel lightly and comfortably.

Abstract translation: 鞍座式车辆包括：支撑机构，被布置成支撑一对车轮相对于车体上下移动;锁定机构，其可连接到所述支撑机构并且被布置成限制所述一对车轮的上下运动; 车轮，布置成检测车辆状态的各种传感器，以及布置成基于各种传感器的检测结果来控制锁定机构的控制器。 控制器控制一对车轮的上下运动的精益限制及其自动取消。 骑手不需要执行操作锁定机构的特殊控制。 此外，根据车辆状态来控制锁定机构，这允许骑车者轻轻地和舒适地行进。

公开(公告)号：US20120191887A1

公开(公告)日：2012-07-26

申请号：US13347159

申请日：2012-01-10

Applicant: TATSUYA YAMAUCHI ,  Masahiro Kobayashi ,  Ryo Yamagata ,  Takashi Tamura ,  Kenichi Watanabe

Inventor： TATSUYA YAMAUCHI ,  Masahiro Kobayashi ,  Ryo Yamagata ,  Takashi Tamura ,  Kenichi Watanabe

IPC: G06F13/42

CPC classification number: G06F13/4282 ,  G06F2213/0026

Abstract: In order to suppress occurrence of a random pattern signal is suppressed without the use of a sideband signal in a long distance data transmission exceeding that defined in a PCIe interface specification, provided is a computer system, including a first component having a transmitting unit which transmits a control signal, a second component having a receiving unit which receives the control signal, a transmission path which connects the first component and the second component along which a signal is transmitted and received, wherein: in case of the transmitting unit of the first component transmits a ternary signal with three states of 0/1/Idle to the receiving unit of the second component, the transmitting unit of the first component substitutes a combination of signals representing 0/1 for a signal representing the Idle state, and transmits the substituted signals instead of the ternary signal to the receiving unit of the second component.

Abstract translation: 为了抑制随机模式信号的发生，在长距离数据传输中不使用超出PCIe接口规范中规定的边带信号的情况下，提供了一种计算机系统，其包括具有发送单元的第一部件 控制信号，具有接收控制信号的接收单元的第二分量，连接发送和接收信号的第一分量和第二分量的传输路径，其中：在第一分量的发送单元的情况下， 将具有0/1 /空闲三种状态的三态信号发送到第二分量的接收单元，第一分量的发送单元代表表示空闲状态的信号的代表0/1的信号的组合，并且发送取代 信号而不是第三组件的接收单元的三进制信号。

公开(公告)号：US20120190154A1

公开(公告)日：2012-07-26

申请号：US13434177

申请日：2012-03-29

Applicant: Tetsuo Yoshimura ,  Kenichi Watanabe ,  Satoshi Otsuka

Inventor： Tetsuo Yoshimura ,  Kenichi Watanabe ,  Satoshi Otsuka

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01G4/005 ,  H01G4/228 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively.

Abstract translation: 半导体器件包括衬底，在衬底上形成的绝缘膜，形成在绝缘膜中的第一和第二导电插塞，电容器元件和布线。 电容器元件包括下电极，电介质膜和上电极。 下电极连接到第一插头的端部并形成在绝缘膜上，并且包括第一阻挡膜。 电介质膜形成在下电极的上表面和侧表面上。 上电极形成在电介质膜上，并且包括比下电极宽的第二阻挡金属膜。 布线连接到第二插头的端部并形成在绝缘膜上，并且包括形成在第一层上的第一层和第二层。 第一层和第二层分别包括第一和第二阻挡金属膜。

公开(公告)号：US08182649B2

公开(公告)日：2012-05-22

申请号：US12445697

申请日：2007-10-12

Applicant: Kenichi Watanabe ,  Takeshi Segawa ,  Hironobu Fujimoto

Inventor： Kenichi Watanabe ,  Takeshi Segawa ,  Hironobu Fujimoto

IPC: B32B38/10

CPC classification number: H01L21/6838 ,  H01L21/67132 ,  Y10S156/941 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1944 ,  Y10T156/1978

Abstract: It is an object to provide a fixing jig which can unmovably suction a chip group produced by segmenting a semiconductor wafer into pieces, and can suction one chip by detaching the chip selectively and reliably from the chip group. A fixing jig 3 is composed of a jig base 30 and an contact layer 31. A concave part 2 is formed on one side of the jig base 30. The concave part 2 is sectioned into small chambers 15 by a partition 12 having a height almost equivalent to that of a sidewall 35. The contact layer 31 is disposed on the upper edge of the sidewall 35 and the partition 12 for covering the concave part 2. A through hole 17 that is communicated with the outside is formed in each small chamber 15.

Abstract translation: 本发明的目的是提供一种固定夹具，其可以将通过将半导体晶片分割成片而产生的芯片组不可移动地吸引，并且可以通过从芯片组中选择性且可靠地分离芯片来吸引一个芯片。 固定夹具3由夹具基座30和接触层31构成。凹部2形成在夹具基座30的一侧。凹部2由高度几乎为几厘米的隔板12分割成小室15 接触层31设置在侧壁35的上边缘和用于覆盖凹部2的隔壁12上。在每个小室15中形成有与外部连通的通孔17 。

公开(公告)号：US08173758B2

公开(公告)日：2012-05-08

申请号：US13073134

申请日：2011-03-28

Applicant: Nobumasa Ootake ,  Kazuhiro Yoshida ,  Kenichi Watanabe ,  Yasuhito Yamaryo

Inventor： Nobumasa Ootake ,  Kazuhiro Yoshida ,  Kenichi Watanabe ,  Yasuhito Yamaryo

IPC: C08G77/16 ,  C08G77/18

CPC classification number: C08G77/04 ,  C08G77/14

Abstract: A polysiloxane represented by the formula (1) or (2): where R, R1, R2, m and n are defined in the specification.

Abstract translation: 由式（1）或（2）表示的聚硅氧烷：其中R，R 1，R 2，m和n在说明书中定义。

公开(公告)号：US08169051B2

公开(公告)日：2012-05-01

申请号：US12539723

申请日：2009-08-12

Applicant: Tetsuo Yoshimura ,  Kenichi Watanabe ,  Satoshi Otsuka

Inventor： Tetsuo Yoshimura ,  Kenichi Watanabe ,  Satoshi Otsuka

IPC: H01L29/92

CPC classification number: H01G4/005 ,  H01G4/228 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively.

Abstract translation: 半导体器件包括衬底，在衬底上形成的绝缘膜，形成在绝缘膜中的第一和第二导电插塞，电容器元件和布线。 电容器元件包括下电极，电介质膜和上电极。 下电极连接到第一插头的端部并形成在绝缘膜上，并且包括第一阻挡膜。 电介质膜形成在下电极的上表面和侧表面上。 上电极形成在电介质膜上，并且包括比下电极宽的第二阻挡金属膜。 布线连接到第二插头的端部并形成在绝缘膜上，并且包括形成在第一层上的第一层和第二层。 第一层和第二层分别包括第一和第二阻挡金属膜。