公开(公告)号：US20170221959A1

公开(公告)日：2017-08-03

申请号：US15009410

申请日：2016-01-28

Applicant: AMS SENSORS UK LIMITED

Inventor： Florin Udrea ,  Syed Zeeshan Ali ,  Richard Henry Hopper ,  Julian Gardner ,  Andrea De Luca

IPC: H01L27/146 ,  H01L27/16 ,  H01L31/024 ,  H01L31/112 ,  H01L31/028 ,  H01L31/09 ,  H01L31/103 ,  H01L37/02 ,  H01L31/12

CPC classification number: H01L27/14669 ,  G01J5/024 ,  G01J5/12 ,  G01J5/20 ,  G01J2005/123 ,  G01J2005/202 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/16 ,  H01L31/024 ,  H01L31/028 ,  H01L31/09 ,  H01L31/103 ,  H01L31/112 ,  H01L31/12 ,  H01L37/025

Abstract: We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.

公开(公告)号：US20170219434A1

公开(公告)日：2017-08-03

申请号：US15009300

申请日：2016-01-28

Applicant: AMS Sensors UK Limited

Inventor： Florin Udrea ,  Syed Zeeshan Ali ,  Richard Henry Hopper ,  Julian Gardner ,  Andrea De Luca

IPC: G01J3/42 ,  H01L27/16 ,  H01L37/02 ,  H01L31/028 ,  H01L23/34 ,  G01J3/28 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/18 ,  H01L27/146 ,  H01L31/16

CPC classification number: G01J3/42 ,  G01J3/2803 ,  G01J5/024 ,  G01J5/0853 ,  G01J5/12 ,  G01J5/20 ,  G01J2005/123 ,  G01J2005/202 ,  H01L23/34 ,  H01L27/1446 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14649 ,  H01L27/14669 ,  H01L27/14683 ,  H01L27/16 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/16 ,  H01L31/1804 ,  H01L37/025

Abstract: We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.

公开(公告)号：US20200150066A1

公开(公告)日：2020-05-14

申请号：US16186843

申请日：2018-11-12

Applicant: AMS Sensors UK Limited

Inventor： Florin Udrea ,  Syed Zeeshan Ali

IPC: G01N27/04 ,  G01N27/12 ,  G01N27/14 ,  G01N27/22 ,  G01N33/00

Abstract: A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

公开(公告)号：US10527571B2

公开(公告)日：2020-01-07

申请号：US15123630

申请日：2015-02-27

Applicant: AMS SENSORS UK LIMITED

Inventor： Florin Udrea ,  Syed Zeeshan Ali ,  Julian Gardner

IPC: G01N27/00 ,  G01N27/04 ,  G01N27/14 ,  H05B3/26 ,  H05B3/14 ,  G01N33/00 ,  H01L21/8238

Abstract: It is disclosed herein a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device is made using partly CMOS or CMOS based processing steps, and it includes a semiconductor substrate, a dielectric region over the semiconductor substrate, a heater within the dielectric region and a patterned layer of noble metal above the dielectric region. The method includes the deposition of a photoresist material over the dielectric region, and patterning the photo-resist material to form a patterned region over the dielectric region. The steps of depositing the photo-resist material and patterning the photo-resist material may be performed in sequence using similar photolithography and etching steps to those used in a CMOS process. The resulting semiconductor device is then subjected to further processing steps which ensure that a dielectric membrane and a metal structure within the membrane are formed in the patterned region over the dielectric region.

公开(公告)号：US10288575B2

公开(公告)日：2019-05-14

申请号：US15168547

申请日：2016-05-31

Applicant: AMS Sensors UK Limited

Inventor： Syed Zeeshan Ali ,  Simon Jonathan Stacey ,  Florin Udrea

IPC: G01N27/18 ,  H05B1/02 ,  G01N21/3504 ,  G01N27/12 ,  G01N27/16 ,  G01N21/03

Abstract: We disclose herein an environmental sensor system comprising an environmental sensor comprising a first heater and a second heater in which the first heater is configured to consume a lower power compared to the second heater. The system also comprises a controller coupled with the environmental sensor. The controller is configured to detect if a measured value of a targeted environmental parameter is present. The controller is configured to switch on at least one of the first and second heaters based on the presence and/or result of the measured value of the targeted environmental parameter.