公开(公告)号：US20250069885A1

公开(公告)日：2025-02-27

申请号：US18946444

申请日：2024-11-13

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US12170197B2

公开(公告)日：2024-12-17

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20240209504A1

公开(公告)日：2024-06-27

申请号：US18390061

申请日：2023-12-20

Applicant: ASM IP Holding B.V.

Inventor： Janne-Petteri Niemelä ,  Elina Färm ,  Charles Dezelah ,  Jan Willem Maes ,  Patricio Romero

IPC: C23C16/455 ,  C23C16/14

CPC classification number: C23C16/45553 ,  C23C16/14

Abstract: The current disclosure relates to methods for forming a film comprising transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and a device comprising a layer that comprises a transition metal. In the method, transition metal is deposited on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reactor chamber and executing a cyclical deposition process. The cyclical deposition process comprises the steps of providing a transition metal precursor in vapor phase into the reaction chamber and providing a halogen precursor in vapor phase into the reaction chamber to form a film comprising elemental transition metal on a substrate. The halogen precursor comprises only one halogen atom. The disclosure further relates to a deposition assembly for depositing a material comprising transition metal on a substrate.

公开(公告)号：US20230042093A1

公开(公告)日：2023-02-09

申请号：US17934725

申请日：2022-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02 ,  H01L21/321 ,  B05D1/00 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/54 ,  C23C16/46 ,  C23C16/30

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US20210134591A1

公开(公告)日：2021-05-06

申请号：US17150153

申请日：2021-01-15

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02 ,  H01L21/321 ,  B05D1/00 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/54 ,  C23C16/46 ,  C23C16/30

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US20200010953A1

公开(公告)日：2020-01-09

申请号：US16575112

申请日：2019-09-18

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Tom E. Blomberg

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/04

Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

公开(公告)号：US20180151345A1

公开(公告)日：2018-05-31

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C14/08 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/042 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US11885020B2

公开(公告)日：2024-01-30

申请号：US17554009

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Jan Willem Maes ,  Elina Färm ,  Saima Ali ,  Antti Niskanen

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/54 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45559 ,  C23C16/54

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

公开(公告)号：US11885014B2

公开(公告)日：2024-01-30

申请号：US17849077

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/34 ,  C23C16/458 ,  C23C16/45527

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

公开(公告)号：US11749523B2

公开(公告)日：2023-09-05

申请号：US17934725

申请日：2022-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02 ,  H01L21/321 ,  B05D1/00 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/54 ,  C23C16/46 ,  C23C16/30 ,  H01L21/67 ,  B05D7/24 ,  H01L21/32

CPC classification number: H01L21/02211 ,  B05D1/62 ,  C23C16/04 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/463 ,  C23C16/54 ,  H01L21/0228 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/321 ,  B05D7/24 ,  C23C16/45525 ,  H01L21/32 ,  H01L21/67207

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.