公开(公告)号：US20250022704A1

公开(公告)日：2025-01-16

申请号：US18221240

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Qiang Ma ,  Biao Liu ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Taiki Hatakeyama ,  Shreyas Shukla ,  Mei-Yee Shek

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.

公开(公告)号：US20210283650A1

公开(公告)日：2021-09-16

申请号：US17335829

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US11033930B2

公开(公告)日：2021-06-15

申请号：US16242184

申请日：2019-01-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  B05D1/18

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US10964527B2

公开(公告)日：2021-03-30

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Biao Liu ,  Cheng Pan ,  Erica Chen ,  Chentsau Ying ,  Srinivas Nemani ,  Ellie Yieh

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20180366317A1

公开(公告)日：2018-12-20

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.