公开(公告)号：US12198936B2

公开(公告)日：2025-01-14

申请号：US18242082

申请日：2023-09-05

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/768

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

公开(公告)号：US11859278B2

公开(公告)日：2024-01-02

申请号：US16817120

申请日：2020-03-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Ahbijit Basu Mallick ,  Eugene Yu Jin Kong ,  Bo Qi

IPC: C23C16/26 ,  H01L23/532 ,  H01L21/02

CPC classification number: C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L23/53295

Abstract: Methods of forming carbon polymer films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to a first carbon precursor to form a substrate surface with terminations based on the reactive functional groups of the first carbon precursor and exposed to a second carbon precursor to react with the surface terminations and form a carbon polymer film. Processing tools and non-transitory memories to perform the process are also disclosed.

公开(公告)号：US11830729B2

公开(公告)日：2023-11-28

申请号：US17144972

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02112 ,  H01L21/02205

Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

公开(公告)号：US11791155B2

公开(公告)日：2023-10-17

申请号：US17004262

申请日：2020-08-27

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02304 ,  H01L21/02236 ,  H01L21/02362 ,  H01L21/02532 ,  H01L29/16

Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 Å. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.

公开(公告)号：US11682554B2

公开(公告)日：2023-06-20

申请号：US17235241

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02167 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/31116 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32697 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.

公开(公告)号：US11658026B2

公开(公告)日：2023-05-23

申请号：US17078985

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211

Abstract: Methods for depositing a silicon-containing film on a substrate are described. The method comprises heating a processing chamber to a temperature greater than or equal to 200° C.; maintaining the processing chamber at a pressure of less than or equal to 300 Torr; coflowing a silicon precursor and nitrous oxide (N2O) into the processing chamber, and depositing a conformal silicon-containing film on the substrate. The silicon-containing film has dielectric constant (k-value) in a range of from about 3.8 to about 4.0, has a breakdown voltage of greater than 8 MV/cm at a leakage current of 1 mA/cm2 and has a leakage current of less than 1 nA/cm2 at 2 MV/cm.

公开(公告)号：US11495454B2

公开(公告)日：2022-11-08

申请号：US16987704

申请日：2020-08-07

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/50 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40

Abstract: Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

公开(公告)号：US20220028686A1

公开(公告)日：2022-01-27

申请号：US16935385

申请日：2020-07-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Bhaskar Bhuyan ,  Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Xinke Wang ,  Mark Saly

IPC: H01L21/02 ,  B05D1/00

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

公开(公告)号：US20210254210A1

公开(公告)日：2021-08-19

申请号：US17173871

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: C23C16/40 ,  C23C16/52

Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

公开(公告)号：US20210118691A1

公开(公告)日：2021-04-22

申请号：US17137637

申请日：2020-12-30

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.