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    CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES
    11.
    发明申请
    CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES 有权

    公开(公告)号：US20210189564A1

    公开(公告)日：2021-06-24

    申请号：US17176411

    申请日：2021-02-16

    Applicant: Applied Materials, Inc.

    Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

    IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

    Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

    BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS
    12.
    发明申请
    BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20200273728A1

    公开(公告)日：2020-08-27

    申请号：US16834109

    申请日：2020-03-30

    Applicant: Applied Materials, Inc.

    Inventor： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

    IPC: H01L21/67 ,  H01L21/687 ,  H01L21/324 ,  H01J37/32

    Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

    Two piece electrode assembly with gap for plasma control
    13.
    发明授权
    Two piece electrode assembly with gap for plasma control 有权

    公开(公告)号：US10699879B2

    公开(公告)日：2020-06-30

    申请号：US15955588

    申请日：2018-04-17

    Applicant: Applied Materials, Inc.

    Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

    IPC: H01J37/32 ,  H01J37/04

    Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

    Thermal management systems and methods for wafer processing systems
    15.
    发明授权
    Thermal management systems and methods for wafer processing systems 有权

    公开(公告)号：US10468276B2

    公开(公告)日：2019-11-05

    申请号：US15581589

    申请日：2017-04-28

    Applicant: Applied Materials, Inc.

    Inventor： David Benjaminson ,  Dmitry Lubomirsky

    IPC: H02G1/08 ,  H01L21/67 ,  H01L21/324 ,  H01L21/687 ,  H01L21/66

    Abstract: A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.

    MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT
    17.
    发明申请
    MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT 审中-公开

    公开(公告)号：US20190272999A1

    公开(公告)日：2019-09-05

    申请号：US15909812

    申请日：2018-03-01

    Applicant: Applied Materials, Inc.

    Inventor： Tae Seung Cho ,  Soonwook Jung ,  Junghoon Kim ,  Satoru Kobayashi ,  Kenneth D. Schatz ,  Soonam Park ,  Dmitry Lubomirsky

    IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01J37/32 ,  H05H1/46

    Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

    OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING
    19.
    发明申请
    OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING 审中-公开

    公开(公告)号：US20190259580A1

    公开(公告)日：2019-08-22

    申请号：US16400615

    申请日：2019-05-01

    Applicant: Applied Materials, Inc.

    Inventor： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311 ,  G01J3/02 ,  G01N21/73 ,  G01J3/443

    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

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