Laser noise elimination in transmission thermometry

    公开(公告)号:US11292079B2

    公开(公告)日:2022-04-05

    申请号:US16550563

    申请日:2019-08-26

    Abstract: Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.

    Support cylinder for thermal processing chamber

    公开(公告)号:US10128144B2

    公开(公告)日:2018-11-13

    申请号:US15600336

    申请日:2017-05-19

    Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

    Monitoring laser processing of semiconductors by raman spectroscopy
    16.
    发明授权
    Monitoring laser processing of semiconductors by raman spectroscopy 有权
    通过拉曼光谱法监测半导体的激光加工

    公开(公告)号:US09508608B2

    公开(公告)日:2016-11-29

    申请号:US14305435

    申请日:2014-06-16

    Inventor: Jiping Li

    Abstract: A Raman probe is used to detect crystal structure of a substrate undergoing thermal processing in a thermal processing system. The Raman probe may be coupled to a targeting system of a laser thermal processing system. The Raman probe includes a laser positioned to direct probe radiation through the targeting system to the substrate, a receiver attuned to Raman radiation emitted by the substrate, and a filter that blocks laser radiation reflected by the substrate. The Raman probe may include more than one laser, more than one receiver, and more than one filter. The Raman probe may provide more than one wavelength of incident radiation to probe the substrate at different depths.

    Abstract translation: 拉曼探头用于检测在热处理系统中进行热处理的衬底的晶体结构。 拉曼探针可以耦合到激光热处理系统的靶向系统。 拉曼探针包括激光器,其定位成将探针辐射通过靶向系统引导到衬底,接收器接合由衬底发射的拉曼辐射,以及滤光器,其阻挡由衬底反射的激光辐射。 拉曼探头可以包括多于一个的激光器,多于一个接收器和多于一个的滤光器。 拉曼探头可以提供多于一个的入射辐射波长来探测不同深度的基底。

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