公开(公告)号：US20210123136A1

公开(公告)日：2021-04-29

申请号：US17084184

申请日：2020-10-29

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Liqi Wu ,  Pratham Jain ,  Jeffrey W. Anthis ,  Mark Saly ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34 ,  C23C16/56

Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US10760159B2

公开(公告)日：2020-09-01

申请号：US15649584

申请日：2017-07-13

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  Thomas Knisley ,  Benjamin Schmiege ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

公开(公告)号：US20190309412A1

公开(公告)日：2019-10-10

申请号：US16376176

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Cong Trinh ,  Mihaela Balseanu ,  Lakmal C. Kalutarage

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

公开(公告)号：US12281382B2

公开(公告)日：2025-04-22

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20250125154A1

公开(公告)日：2025-04-17

申请号：US18485998

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Lala Zhu ,  Yimin Huang ,  Shi Che ,  Yi Jin ,  Dongqing Yang ,  Lakmal C. Kalutarage ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods and systems of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. Methods may include forming a low quality oxide within one or more of the recesses, where the low quality oxide and a silicon-containing material each contain an exposed surface. Methods include contacting the low quality oxide and the high quality semiconductor material with a passivating agent selective to a surface defect of the low quality oxide. Methods include contacting the substrate with an etching agent and/or a cleaning agent, where the contacting with the cleaning agent removes the high quality semiconductor material at an equal or faster rate than the low quality oxide.

公开(公告)号：US20240087881A1

公开(公告)日：2024-03-14

申请号：US17896753

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Michael Haverty ,  Shruba Gangopadhyay ,  Bo Xie ,  Yijun Liu ,  Ruitong Xiong ,  Rui Lu ,  Xiaobo Li ,  Li-Qun Xia ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02348

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20220384176A1

公开(公告)日：2022-12-01

申请号：US17873793

申请日：2022-07-26

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Joseph Knisley

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/311

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US11417515B2

公开(公告)日：2022-08-16

申请号：US16632164

申请日：2018-07-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/311

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20220076960A1

公开(公告)日：2022-03-10

申请号：US17014251

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.

公开(公告)号：US20180061629A1

公开(公告)日：2018-03-01

申请号：US15804503

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.