公开(公告)号：US11282676B2

公开(公告)日：2022-03-22

申请号：US16444549

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/46

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.

公开(公告)号：US20240141492A1

公开(公告)日：2024-05-02

申请号：US18125215

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Prasanth Narayanan ,  Vijayabhaskara Venkatagiriyappa ,  Keiichi Tanaka ,  Ning Li ,  Robert B. Moore ,  Robert C. Linke ,  Mandyam Sriram ,  Mario D. Silvetti ,  Michael Racine ,  Tae Kwang Lee

IPC: C23C16/458

CPC classification number: C23C16/4581 ,  C23C16/4583

Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

公开(公告)号：US11923172B2

公开(公告)日：2024-03-05

申请号：US17666906

申请日：2022-02-08

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01J37/32091 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/0262 ,  H01L21/306

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

公开(公告)号：US11713508B2

公开(公告)日：2023-08-01

申请号：US17845191

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/45544 ,  C23C16/45589 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32431 ,  H01J37/32449

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20230146837A1

公开(公告)日：2023-05-11

申请号：US17522629

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Mandyam Sriram ,  Sanjeev Baluja

IPC: C23C16/46 ,  F28F3/12 ,  F28F21/08

CPC classification number: C23C16/46 ,  F28F3/12 ,  F28F21/083 ,  F28F21/084 ,  F28F2225/00

Abstract: Pedestal heater radiators, pedestal assemblies including the pedestal heater radiators and methods of decreasing deposition non-uniformity are described. The pedestal heater radiator has a first radiator body and a second radiator body with different emissivities. The first radiator body and second radiator body are sized and positioned to decrease the heat loss differential between sides of the pedestal.

公开(公告)号：US20220195600A1

公开(公告)日：2022-06-23

申请号：US17129660

申请日：2020-12-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20220165540A1

公开(公告)日：2022-05-26

申请号：US17666906

申请日：2022-02-08

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/46

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

公开(公告)号：US20200256228A1

公开(公告)日：2020-08-13

申请号：US16789796

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Hari Ponnekanti ,  Mario D. Silvetti ,  Kevin Griffin

IPC: F01N1/16 ,  F01N11/00 ,  F01N13/08

Abstract: Exhaust systems for handling multiple effluent streams are described. Some embodiments include pressure drops to prevent perturbations from one effluent source from affecting a second effluent source. Some embodiments incorporate an exhaust assembly with multiple inlets and pumps and a single outlet. The exhaust assembly includes shared auxiliary components like purge and cooling systems.

公开(公告)号：US20230313378A1

公开(公告)日：2023-10-05

申请号：US17709931

申请日：2022-03-31

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Lei Zhou ,  Muhannad Mustafa ,  Shih Chung Chen ,  Zhihui Liu ,  Chi-Chou Lin ,  Bin Cao ,  Janardhan Devrajan ,  Mario D. Silvetti ,  Mandyam Sriram

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45544

Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

公开(公告)号：US20230059232A1

公开(公告)日：2023-02-23

申请号：US17407086

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Kevin Griffin

IPC: C23C16/458 ,  H01L21/687

Abstract: Pedestal assemblies, purge rings for pedestal assemblies, and processing methods for increasing residence time of an edge purge gas in heated pedestal assemblies are described. Purge rings have an inner diameter face and an outer diameter face defining a thickness of the purge ring, a top surface and a bottom surface defining a height of the purge ring, and a thermal expansion feature. Purge rings comprise a plurality of apertures extending through the thickness and aligned circumferentially with a plurality of circumferentially spaced purge outlets in a substrate support.