公开(公告)号：US20240141492A1

公开(公告)日：2024-05-02

申请号：US18125215

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Prasanth Narayanan ,  Vijayabhaskara Venkatagiriyappa ,  Keiichi Tanaka ,  Ning Li ,  Robert B. Moore ,  Robert C. Linke ,  Mandyam Sriram ,  Mario D. Silvetti ,  Michael Racine ,  Tae Kwang Lee

IPC: C23C16/458

CPC classification number: C23C16/4581 ,  C23C16/4583

Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

公开(公告)号：US20220154337A1

公开(公告)日：2022-05-19

申请号：US16950096

申请日：2020-11-17

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/455 ,  C01B32/907 ,  C01B21/082 ,  C23C16/32 ,  C23C16/36 ,  C23C16/30 ,  C23C16/34

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US20220119942A1

公开(公告)日：2022-04-21

申请号：US17563773

申请日：2021-12-28

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Steven D. Marcus ,  Tai T. Ngo ,  Kevin Griffin

IPC: C23C16/44 ,  C23C16/455

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

公开(公告)号：US20220059362A1

公开(公告)日：2022-02-24

申请号：US17516096

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela A. Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US20220028660A1

公开(公告)日：2022-01-27

申请号：US17498231

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela A. Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US11028478B2

公开(公告)日：2021-06-08

申请号：US16006010

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US10957532B2

公开(公告)日：2021-03-23

申请号：US16567044

申请日：2019-09-11

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/455 ,  C23C16/36

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

公开(公告)号：US10319583B2

公开(公告)日：2019-06-11

申请号：US15455744

申请日：2017-03-10

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3105

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.

公开(公告)号：US10170298B2

公开(公告)日：2019-01-01

申请号：US15805831

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/687

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US10147599B2

公开(公告)日：2018-12-04

申请号：US15789370

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.