公开(公告)号：US20220275501A1

公开(公告)日：2022-09-01

申请号：US17682431

申请日：2022-02-28

Applicant: Applied Materials, Inc.

Inventor： Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi

IPC: C23C16/02 ,  C23C16/455 ,  C23C16/04 ,  H01J37/32

Abstract: Methods of surface pretreatment during selective deposition are disclosed. One or more embodiment of the disclosure provides surface pretreatments which facilitate the removal of blocking layers. Some embodiments of the disclosure include a surface pretreatment comprising exposure of a substrate with a first surface and a second surface to modify the first surface, a blocking layer is deposited on the modified first surface, a film is selectively deposited on the second surface over the blocking layer, and the blocking layer is removed.

公开(公告)号：US20240420996A1

公开(公告)日：2024-12-19

申请号：US18209035

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Jiajie Cen ,  Zhiyuan Wu ,  Kevin Kashefi ,  Yong Jin Kim ,  Yang Zhou ,  Zheng Ju

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/311

Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include forming a hardmask on the dielectric layer; selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and on the hardmask; treating the microelectronic device with a plasma to remove the self-assembled monolayer (SAM) from the hardmask; forming a barrier layer on the dielectric layer and on the hardmask; selectively depositing a metal liner on the barrier layer on the sidewall; and performing a gap fill process on the metal liner.

公开(公告)号：US20240381753A1

公开(公告)日：2024-11-14

申请号：US18649723

申请日：2024-04-29

Applicant: Applied Materials, Inc.

Inventor： Yongkee Chae ,  Xun Li ,  Jun-Nan Liu ,  Shinobu Abe ,  Cheng-Pei Ouyang ,  Su-Ho Cho ,  Yong Jin Kim ,  Thomas Werner Zilbauer

IPC: H10K71/16 ,  H10K30/40 ,  H10K30/57 ,  H10K30/85

Abstract: A method includes obtaining a base structure of a tandem solar cell device and forming a transparent conductive oxide (TCO) layer on the base structure using a low damage sputter deposition (LDSD) process. The LDSD process includes a rotary facing sputter deposition process.

公开(公告)号：US20240297073A1

公开(公告)日：2024-09-05

申请号：US18117203

申请日：2023-03-03

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Bhaskar Jyoti Bhuyan ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Xiangjin Xie ,  Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Michael Haverty ,  Mark Saly ,  Kevin Kashefi

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76831 ,  H01L21/76877

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

公开(公告)号：US20230253248A1

公开(公告)日：2023-08-10

申请号：US18119080

申请日：2023-03-08

Applicant: Applied Materials, Inc.

Inventor： Yang Zhou ,  Yong Jin Kim ,  Ge Qu ,  Zhiyuan Wu ,  Carmen Leal Cervantes ,  Feng Chen ,  Kevin Kashefi ,  Bhaskar Jyoti Bhuyan ,  Drew Phillips ,  Aaron Dangerfield

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L21/28568

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C≡C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R′C═CR″, wherein R′ and R″ independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.