公开(公告)号：US20140191277A1

公开(公告)日：2014-07-10

申请号：US14150418

申请日：2014-01-08

Applicant: Epistar Corporation

Inventor： Hong-Che CHEN ,  Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Yu-Chen YANG ,  Jia-Kuen WANG ,  Chih-Nan LIN

IPC: H01L33/48

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

Abstract translation: 发光装置包括：发光半导体堆叠，其包括凹部和台面，其中所述凹部包括底部，所述台面包括上表面; 在所述凹部中和所述台面的上表面的一部分上的第一绝缘层; 以及包括第一层和第二层的第一电极，其中所述第一层包括第一导电材料并且位于所述台面的上表面的另一部分上，并且所述第二层包括第二导电材料并且位于所述第一层上 。

公开(公告)号：US20140084324A1

公开(公告)日：2014-03-27

申请号：US14093924

申请日：2013-12-02

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/20 ,  H01L33/60

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract translation: 本申请的实施例的发光装置包括设置有第一主侧，第二主侧和有源层的半导体层序列; 形成在半导体层序列中的倾斜沟槽，具有靠近第二主侧的顶端，底端以及连接顶端和底端的内侧壁。 在该实施例中，内侧壁是倾斜表面。 发光装置还包括设置在斜面沟槽和第二主侧的内侧壁上的电介质层; 形成在所述电介质层上的第一金属层; 载体基材; 以及连接载体衬底和半导体层序列的第一连接层。

公开(公告)号：US20240421262A1

公开(公告)日：2024-12-19

申请号：US18743847

申请日：2024-06-14

Applicant: EPISTAR CORPORATION

Inventor： Yen-Liang KUO ,  Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Chung-Hao WANG

IPC: H01L33/46

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and comprising an upper surface; a reflective structure comprising a reflective structure opening having a first side surface and a second side surface; a connection layer covering the reflective structure; and a metal reflective layer covering the connection layer; wherein in a cross-sectional view of the light-emitting device, a first portion of a projection of the first side surface to the upper surface of the contact electrode comprises a first length, a second portion of a projection of the second side surface to the upper surface of the contact electrode comprises a second length, and the first length is smaller than the second length.

公开(公告)号：US20240194724A1

公开(公告)日：2024-06-13

申请号：US18442843

申请日：2024-02-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  I-Lun MA ,  Bo-Jiun HU ,  Yu-Ling LIN ,  Chien-Chih LIAO

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L33/24 ,  H01L33/385 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/12 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US20230197904A1

公开(公告)日：2023-06-22

申请号：US18113344

申请日：2023-02-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20210391504A1

公开(公告)日：2021-12-16

申请号：US17357164

申请日：2021-06-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung LIN ,  Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

公开(公告)号：US20210296536A1

公开(公告)日：2021-09-23

申请号：US17202001

申请日：2021-03-15

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chao-Hsing CHEN ,  Chi-Ling LEE ,  Chen OU ,  Min-Hsun HSIEH

IPC: H01L33/38 ,  H01L33/42 ,  H01L25/13

Abstract: A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.

公开(公告)号：US20190273186A1

公开(公告)日：2019-09-05

申请号：US16416488

申请日：2019-05-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46

Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

公开(公告)号：US20190245116A1

公开(公告)日：2019-08-08

申请号：US16384890

申请日：2019-04-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20190019919A1

公开(公告)日：2019-01-17

申请号：US16035299

申请日：2018-07-13

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/40 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.