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    OPTOELECTRONIC DEVICE
    12.
    发明申请
    OPTOELECTRONIC DEVICE 有权

    公开(公告)号：US20180233630A1

    公开(公告)日：2018-08-16

    申请号：US15952197

    申请日：2018-04-12

    Applicant: EPISTAR CORPORATION

    Inventor： Chang-Huei JING ,  Chien-Fu SHEN

    IPC: H01L33/38 ,  H01L33/00 ,  H01L25/075

    Abstract: An optoelectronic device comprises a substrate; a groove on the substrate; a plurality of semiconductor units on the substrate and separated by the groove, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a connecting part crossing the groove for connecting two of the plurality of semiconductor units, wherein the connecting part comprises one end on the first semiconductor layer and another end on the second semiconductor layer; a first electrode comprising a plurality of first extensions jointly connected to the one end of the connecting part; and a second electrode comprising a plurality of second extensions jointly connected to the another end of the connecting part, wherein an amount of the plurality of first extensions is different from an amount of the plurality of second extensions.

    OPTOELECTRONIC DEVICE
    13.
    发明申请
    OPTOELECTRONIC DEVICE 审中-公开
    光电器件

    公开(公告)号：US20170040493A1

    公开(公告)日：2017-02-09

    申请号：US15271632

    申请日：2016-09-21

    Applicant: EPISTAR CORPORATION

    Inventor： Jia-Kuen WANG ,  Chien-Fu SHEN ,  Hung-Che CHEN ,  Chao-Hsing CHEN

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32

    CPC classification number: H01L33/38 ,  H01L33/0095 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

    Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer arranged above the semiconductor stack and having a first major plane and a first boundary with a first gradually reduced thickness, and a second metal layer arranged above the first metal layer and having a second major plane and a second boundary with a second gradually reduced thickness, wherein the second major plane parallels to the first major plane and the second boundary exceeds the first boundary, wherein a first angle formed between the first boundary and the semiconductor stack, and/or a second angle formed between the second boundary and the semiconductor stack, is/are less than 10°.

    Abstract translation: 光电子器件包括半导体叠层，第一金属层，其布置在半导体堆叠之上并且具有第一主平面和具有第一逐渐减小厚度的第一边界，以及布置在第一金属层上方并具有第二主体的第二金属层 平面和具有第二逐渐减小的厚度的第二边界，其中所述第二主平面平行于所述第一主平面，并且所述第二边界超过所述第一边界，其中在所述第一边界和所述半导体叠层之间形成的第一角，和/ 在第二边界和半导体堆叠之间形成的第二角度小于10°。

    OPTOELECTRONIC DEVICE
    14.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号：US20160233385A1

    公开(公告)日：2016-08-11

    申请号：US15097468

    申请日：2016-04-13

    Applicant: EPISTAR CORPORATION

    Inventor： Chang-Huei JING ,  Chien-Fu SHEN

    IPC: H01L33/38 ,  H01L33/00 ,  H01L27/15

    CPC classification number: H01L33/387 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic device comprises a substrate; a groove on the substrate; a plurality of semiconductor units on the substrate and separated by the groove, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a connecting part crossing the groove for connecting two of the plurality of semiconductor units, wherein the connecting part comprises one end on the first semiconductor layer and another end on the second semiconductor layer; a first electrode comprising a plurality of first extensions jointly connected to the one end of the connecting part; and a second electrode comprising a plurality of second extensions jointly connected to the another end of the connecting part, wherein an amount of the plurality of first extensions is different from an amount of the plurality of second extensions.

    Abstract translation: 光电器件包括衬底; 衬底上的凹槽; 多个半导体单元，位于所述基板上并由所述凹槽分离，其中每个半导体单元包括第一半导体层，第二半导体层和介于所述第一半导体层和所述第二半导体层之间的有源区; 所述连接部分与所述凹槽交叉，用于连接所述多个半导体单元中的两个，其中所述连接部分包括在所述第一半导体层上的一端和所述第二半导体层上的另一端; 第一电极，其包括共同连接到所述连接部分的一端的多个第一延伸部; 以及第二电极，其包括共同连接到所述连接部分的另一端的多个第二延伸部，其中所述多个第一延伸部的量与所述多个第二延伸部的量不同。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    16.
    发明公开
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240154065A1

    公开(公告)日：2024-05-09

    申请号：US18410823

    申请日：2024-01-11

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Chien-Chih LIAO ,  Tzu-Yao TSENG ,  Tsun-Kai KO ,  Chien-Fu SHEN

    IPC: H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405

    Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220367563A1

    公开(公告)日：2022-11-17

    申请号：US17877550

    申请日：2022-07-29

    Applicant: EPISTAR CORPORATION

    Inventor： Cheng-Yu CHEN ,  Hui-Chun YEH ,  Chien-Fu SHEN

    IPC: H01L27/15 ,  H01L33/38

    Abstract: A method for manufacturing a light-emitting device, includes: forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layer, a second semiconductor layer and an active region formed therebetween; removing portions of the semiconductor stack to form a plurality of mesas and exposing a part of the first semiconductor layer, wherein the part of the first semiconductor layer includes a first portion and a second portion; forming a plurality of trenches by removing the first portion of the part of the first semiconductor to exposing a top surface of the substrate and a side wall of the first semiconductor, wherein the plurality of trenches defining a plurality of light-emitting units in the semiconductor stack; wherein in a top view, the plurality of trenches includes a first trench extending along a first direction and a second trench extending along a second direction not parallel with the first trench; and wherein the second trench includes an end; forming connection electrodes on the semiconductor stack to electrically connect the adjacent light-emitting units; and separating the substrate and the second portion of the part of the first semiconductor layer along a first dicing line not parallel with the second direction; wherein the first dicing line intersects the end of the second trench.

    LIGHT-EMITTING DEVICE
    19.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210210659A1

    公开(公告)日：2021-07-08

    申请号：US17206647

    申请日：2021-03-19

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

    IPC: H01L33/46 ,  H01L33/38

    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

    LIGHT-EMITTING STRUCTURE
    20.
    发明申请
    LIGHT-EMITTING STRUCTURE 有权

    公开(公告)号：US20210183942A1

    公开(公告)日：2021-06-17

    申请号：US17170407

    申请日：2021-02-08

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

    IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

    Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

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