公开(公告)号：US20230067254A1

公开(公告)日：2023-03-02

申请号：US17983947

申请日：2022-11-09

Applicant: EPISTAR CORPORATION ,  iReach Corporation

Inventor： Hsin-Chan CHUNG ,  Shou-Lung CHEN

IPC: H01S5/042 ,  H01S5/028 ,  H01S5/183 ,  H01S5/023 ,  H01S5/0225 ,  H01S5/0233 ,  H01S5/0235

Abstract: A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

公开(公告)号：US20200350742A1

公开(公告)日：2020-11-05

申请号：US16863277

申请日：2020-04-30

Applicant: EPISTAR CORPORATION ,  iReach Corporation

Inventor： Hsin-Chan CHUNG ,  Shou-Lung CHEN

IPC: H01S5/042 ,  H01S5/028 ,  H01S5/022 ,  H01S5/183

Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

公开(公告)号：US20200105975A1

公开(公告)日：2020-04-02

申请号：US16700614

申请日：2019-12-02

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Wen-Luh LIAO ,  Chun-Yu LIN ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

公开(公告)号：US20190229233A1

公开(公告)日：2019-07-25

申请号：US16374282

申请日：2019-04-03

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng YU ,  Ching-Yuan TSAI ,  Yao-Ru CHANG ,  Hsin-Chan CHUNG ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Cheng-Hsing CHIANG ,  Kuo-Feng HUANG ,  Hsu-Hsuan TENG ,  Hung-Ta CHENG ,  Yung-Fu CHANG

IPC: H01L33/06 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/64 ,  H01L33/62 ,  H01L33/60 ,  H01L33/46

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20170133556A1

公开(公告)日：2017-05-11

申请号：US15410441

申请日：2017-01-19

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Wen-Luh LIAO ,  Chun-Yu LIN ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG

IPC: H01L33/30 ,  H01L33/24 ,  H01L33/44 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/305 ,  H01L33/38 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and a light-absorbing layer having a first portion surrounding the first semiconductor layer in a top view.

公开(公告)号：US20160197242A1

公开(公告)日：2016-07-07

申请号：US15070727

申请日：2016-03-15

Applicant: EPISTAR CORPORATION

Inventor： Ching-Yuan TSAI ,  Hsin-Chan CHUNG ,  Wen-Luh LIAO

IPC: H01L33/44 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light-emitting element comprises a light-emitting stack comprising an active layer for emitting a light; a window layer on the light-emitting stack; and a first insulative layer having a first refractive index on the window layer; wherein the first insulative layer has a first refractive index, and the window layer has a second refractive index, and a difference between the first refractive index and the second refractive index is larger than 1.5.

Abstract translation: 发光元件包括发光层，其包括用于发光的有源层; 在发光叠层上的窗口层; 以及在所述窗口层上具有第一折射率的第一绝缘层; 其中所述第一绝缘层具有第一折射率，并且所述窗口层具有第二折射率，并且所述第一折射率与所述第二折射率之间的差大于1.5。