公开(公告)号：US20200075807A1

公开(公告)日：2020-03-05

申请号：US16549822

申请日：2019-08-23

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

公开(公告)号：US20240136463A1

公开(公告)日：2024-04-25

申请号：US18391644

申请日：2023-12-20

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  A61B5/021 ,  A61B5/024 ,  A61B5/145 ,  A61B5/1455 ,  G01J3/10 ,  H01L25/16 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US20220102582A1

公开(公告)日：2022-03-31

申请号：US17550449

申请日：2021-12-14

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

公开(公告)号：US20170331001A1

公开(公告)日：2017-11-16

申请号：US15591544

申请日：2017-05-10

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng YU ,  Ching-Yuan TSAI ,  Yao-Ru CHANG ,  Hsin-Chan CHUNG ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Cheng-Hsing CHIANG ,  Kuo-Feng HUANG ,  Hsu-Hsuan TENG ,  Hung-Ta CHENG ,  Yung-Fu CHANG

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/002 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20190229233A1

公开(公告)日：2019-07-25

申请号：US16374282

申请日：2019-04-03

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng YU ,  Ching-Yuan TSAI ,  Yao-Ru CHANG ,  Hsin-Chan CHUNG ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Cheng-Hsing CHIANG ,  Kuo-Feng HUANG ,  Hsu-Hsuan TENG ,  Hung-Ta CHENG ,  Yung-Fu CHANG

IPC: H01L33/06 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/64 ,  H01L33/62 ,  H01L33/60 ,  H01L33/46

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20190131496A1

公开(公告)日：2019-05-02

申请号：US16228575

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

公开(公告)号：US20220059717A1

公开(公告)日：2022-02-24

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

公开(公告)号：US20190081213A1

公开(公告)日：2019-03-14

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

IPC: H01L33/38 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

公开(公告)号：US20180033918A1

公开(公告)日：2018-02-01

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20200168757A1

公开(公告)日：2020-05-28

申请号：US16697340

申请日：2019-11-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  G01J3/10 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.