-
公开(公告)号：US20180374992A1
公开(公告)日：2018-12-27
申请号：US16043981
申请日：2018-07-24
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Chih CHIU , Shih-I CHEN , You-Hsien CHANG , Hao-Min KU , Ching-Yuan TSAI , Kuan-Chih KUO , Chih-Hung HSIAO , Rong-Ren LEE
IPC: H01L33/22 , H01L33/24 , H01L33/10 , H01L33/02 , H01L33/30 , H01L33/38 , H01L33/14 , H01L33/20 , H01L33/40 , H01L33/42
Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.
-
公开(公告)号：US20180013037A1
公开(公告)日：2018-01-11
申请号：US15699658
申请日：2017-09-08
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Chih CHIU , Shih-I CHEN , You-Hsien CHANG , Hao-Min KU , Ching-Yuan TSAI , Kuan-Chih KUO , Chih-Hung HSIAO , Rong-Ren LEE
IPC: H01L33/22 , H01L33/10 , H01L33/02 , H01L33/38 , H01L33/24 , H01L33/30 , H01L33/42 , H01L33/14 , H01L33/20 , H01L33/40
CPC classification number: H01L33/22 , H01L33/02 , H01L33/025 , H01L33/10 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/305 , H01L33/38 , H01L33/405 , H01L33/42
Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.
-
公开(公告)号：US20180351036A1
公开(公告)日：2018-12-06
申请号：US16041398
申请日：2018-07-20
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
CPC classification number: H01L33/06 , H01L33/002 , H01L33/0079 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L33/642 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
-
Patent Agency Ranking
公开(公告)号：US20190229233A1
公开(公告)日：2019-07-25
申请号：US16374282
申请日：2019-04-03
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
-
公开(公告)号：US20170040492A1
公开(公告)日：2017-02-09
申请号：US15332730
申请日：2016-10-24
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Chih CHIU , Shih-I CHEN , You-Hsien CHANG , Hao-Min KU , Ching-Yuan TSAI , Kuan-Chih KUO , Chih-Hung HSIAO , Rong-Ren LEE
CPC classification number: H01L33/22 , H01L33/02 , H01L33/025 , H01L33/10 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/305 , H01L33/38 , H01L33/405 , H01L33/42
Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.
Abstract translation: 半导体发光器件包括用于发射光的外延结构，其包括边缘，第一部分和围绕第一部分的第二部分，其中第二部分中的掺杂材料的浓度高于掺杂材料的浓度 在第一部分中，外延结构上的主要光提取表面包括对应于第一部分的第一光提取区域和对应于第二部分和边缘的第二光提取区域，其中第二部分在 边缘和第一部分。
-
公开(公告)号：US20160197242A1
公开(公告)日：2016-07-07
申请号：US15070727
申请日：2016-03-15
Applicant: EPISTAR CORPORATION
Inventor： Ching-Yuan TSAI , Hsin-Chan CHUNG , Wen-Luh LIAO
CPC classification number: H01L33/44 , H01L33/14 , H01L33/38 , H01L33/42 , H01L33/46 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A light-emitting element comprises a light-emitting stack comprising an active layer for emitting a light; a window layer on the light-emitting stack; and a first insulative layer having a first refractive index on the window layer; wherein the first insulative layer has a first refractive index, and the window layer has a second refractive index, and a difference between the first refractive index and the second refractive index is larger than 1.5.
Abstract translation: 发光元件包括发光层，其包括用于发光的有源层; 在发光叠层上的窗口层; 以及在所述窗口层上具有第一折射率的第一绝缘层; 其中所述第一绝缘层具有第一折射率，并且所述窗口层具有第二折射率，并且所述第一折射率与所述第二折射率之间的差大于1.5。
-
公开(公告)号：US20170331001A1
公开(公告)日：2017-11-16
申请号：US15591544
申请日：2017-05-10
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
CPC classification number: H01L33/06 , H01L33/002 , H01L33/0079 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
-
公开(公告)号：US20160027965A1
公开(公告)日：2016-01-28
申请号：US14866232
申请日：2015-09-25
Applicant: EPISTAR CORPORATION
Inventor： Ching-Yuan TSAI , Hsin-Chan CHUNG , Wen-Luh LIAO
CPC classification number: H01L33/44 , H01L33/14 , H01L33/38 , H01L33/42 , H01L33/46 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A light-emitting element comprises a light-emitting stack comprising an active layer, a first insulative layer having a first refractive index on the light-emitting stack, a second insulative layer having a second refractive index on the first insulative layer, and a transparent conducting structure having a third refractive index on the second insulative layer, wherein the second refractive index is between the first refractive index and the third refractive index, and the first refractive index is smaller than 1.4.
Abstract translation: 发光元件包括发光叠层，其包括有源层，在发光叠层上具有第一折射率的第一绝缘层，在第一绝缘层上具有第二折射率的第二绝缘层，以及透明 在所述第二绝缘层上具有第三折射率的导电结构，其中所述第二折射率在所述第一折射率和所述第三折射率之间，并且所述第一折射率小于1.4。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.011 seconds)
