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    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190081213A1

    公开(公告)日：2019-03-14

    申请号：US16128604

    申请日：2018-09-12

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

    IPC: H01L33/38 ,  H01L33/30

    CPC classification number: H01L33/38 ,  H01L33/30

    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20150108494A1

    公开(公告)日：2015-04-23

    申请号：US14520067

    申请日：2014-10-21

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/30

    CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

    Abstract translation: 本发明提供一种发光装置及其制造方法。 该发光装置包括：发光叠层; 以及半导体层，其具有连接到所述发光叠层的第一表面，与所述第一表面相对的第二表面和空隙; 其中所述空隙包括靠近所述第一表面的底部部分和所述第二表面上的开口，并且所述底部部分的尺寸大于所述开口的尺寸。

    LIGHT-EMITTING DEVICE
    6.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180277590A1

    公开(公告)日：2018-09-27

    申请号：US15926708

    申请日：2018-03-20

    Applicant: EPISTAR CORPORATION

    Inventor： Hsin-Chan CHUNG ,  Wen-Luh LIAO ,  Shih-Chang LEE

    IPC: H01L27/15 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

    Abstract: A light-emitting device includes: a substrate comprising a first side and a second side opposite to the first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area and an electrode pad area connected to the light extraction area; multiple electrode pads, wherein each of the multiple electrode pads is on one of the electrode pad areas; and a blocking layer between one of the semiconductor stacks and the substrate.

    LIGHT-EMITTING ELEMENT
    8.
    发明申请
    LIGHT-EMITTING ELEMENT 有权
    发光元件

    公开(公告)号：US20160027965A1

    公开(公告)日：2016-01-28

    申请号：US14866232

    申请日：2015-09-25

    Applicant: EPISTAR CORPORATION

    Inventor： Ching-Yuan TSAI ,  Hsin-Chan CHUNG ,  Wen-Luh LIAO

    IPC: H01L33/42 ,  H01L33/20 ,  H01L33/62 ,  H01L33/60

    CPC classification number: H01L33/44 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: A light-emitting element comprises a light-emitting stack comprising an active layer, a first insulative layer having a first refractive index on the light-emitting stack, a second insulative layer having a second refractive index on the first insulative layer, and a transparent conducting structure having a third refractive index on the second insulative layer, wherein the second refractive index is between the first refractive index and the third refractive index, and the first refractive index is smaller than 1.4.

    Abstract translation: 发光元件包括发光叠层，其包括有源层，在发光叠层上具有第一折射率的第一绝缘层，在第一绝缘层上具有第二折射率的第二绝缘层，以及透明 在所述第二绝缘层上具有第三折射率的导电结构，其中所述第二折射率在所述第一折射率和所述第三折射率之间，并且所述第一折射率小于1.4。

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