公开(公告)号：US11227975B2

公开(公告)日：2022-01-18

申请号：US16549822

申请日：2019-08-23

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Fan-Lei Wu ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Hung-Ta Cheng ,  Chih-Chaing Yang ,  Yao-Ru Chang ,  Yi Hsiao ,  Hsiang Chang

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

公开(公告)号：US10693039B2

公开(公告)日：2020-06-23

申请号：US15602421

申请日：2017-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

公开(公告)号：US10461223B2

公开(公告)日：2019-10-29

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

IPC: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

公开(公告)号：US10312407B2

公开(公告)日：2019-06-04

申请号：US16041398

申请日：2018-07-20

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/60 ,  H01L33/64

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US09748443B2

公开(公告)日：2017-08-29

申请号：US15410441

申请日：2017-01-19

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru Chang ,  Wen-Luh Liao ,  Chun-Yu Lin ,  Hsin-Chan Chung ,  Hung-Ta Cheng

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L33/24

CPC classification number: H01L33/44 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/305 ,  H01L33/38 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and a light-absorbing layer having a first portion surrounding the first semiconductor layer in a top view.

公开(公告)号：US09685588B2

公开(公告)日：2017-06-20

申请号：US15083743

申请日：2016-03-29

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.