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    LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS
    12.
    发明申请
    LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS 有权
    具有多个发光堆叠层的发光元件

    公开(公告)号：US20130075696A1

    公开(公告)日：2013-03-28

    申请号：US13683476

    申请日：2012-11-21

    Applicant: Epistar Corporation

    Inventor： Min-Hsun HSIEH ,  Yi-Chieh LIN ,  Rong-Ren LEE

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01L33/08

    Abstract: A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between the first MQW structure and the second MQW structure; and a second light-emitting element emitting a third light with a third dominant wavelength, wherein the first number is different from the second number.

    Abstract translation: 发光装置包括发射具有第一主波长的第一光的第一发光元件，其包括包括第一数量的MQW对的第一MQW结构; 在第一MQW结构上的第二MQW结构，包括第二数量的MQW对; 以及在所述第一MQW结构和所述第二MQW结构之间的隧道层; 以及发射具有第三主波长的第三光的第二发光元件，其中所述第一数量与所述第二数量不同。

    LIGHT-EMITTING DEVICE
    15.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20170047478A1

    公开(公告)日：2017-02-16

    申请号：US15335078

    申请日：2016-10-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

    IPC: H01L33/08 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62 ,  H01L33/10 ,  H01L33/56

    CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

    Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

    Abstract translation: 一种发光器件包括：第一发光半导体堆叠，包括第一有源层; 在第一发光半导体堆叠下面的第二发光半导体堆叠，其中第二发光半导体堆叠包括第二有源层; 第一发光半导体堆叠和第二发光半导体堆叠之间的波长滤波器; 所述波长滤波器和所述第二发光半导体叠层之间的保护层; 并且其中所述第一发光半导体堆叠还包括夹着所述第一有源层的第一半导体层和第二半导体层，所述第二发光半导体堆叠还包括夹持所述第二有源层的第三半导体层和第四半导体层， 其中所述第二半导体层具有第一带隙，所述第三半导体层具有第二带隙，并且所述保护层在所述第一带隙和所述第二带隙之间具有第三带隙。

    LIGHT-EMITTING DEVICE
    16.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20160233376A1

    公开(公告)日：2016-08-11

    申请号：US15051712

    申请日：2016-02-24

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/12 ,  H01L33/06

    CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/26 ,  H01L33/30 ,  H01L33/38

    Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and an active structure on the substrate, the active structure comprising a well layer and a barrier layer, wherein the well layer comprises multiple different elements of group VA; wherein the substrate has a first intrinsic lattice constant, the well layer has a second intrinsic lattice constant, the barrier layer has a third intrinsic lattice constant, and the third intrinsic lattice constant is between the second intrinsic lattice constant and the first intrinsic lattice constant.

    Abstract translation: 提供了一种发光装置。 发光装置包括：基板; 以及所述衬底上的活性结构，所述活性结构包括阱层和阻挡层，其中所述阱层包含组VA的多个不同元素; 其中所述衬底具有第一本征晶格常数，所述阱层具有第二本征晶格常数，所述势垒层具有第三本征晶格常数，并且所述第三本征晶格常数在所述第二本征晶格常数和所述第一本征晶格常数之间。

    SEMICONDUCTOR DEVICE
    17.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250006862A1

    公开(公告)日：2025-01-02

    申请号：US18756730

    申请日：2024-06-27

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Kuo-Feng HUANG ,  Shih-Hao CHENG

    IPC: H01L33/06 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01S5/343

    Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The active region is located between the first semiconductor structure and the second semiconductor structure. The active region includes a light-emitting region having N pair(s) of semiconductor stack(s). Each of the semiconductor stack includes a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1. The well layer includes a first group III-V semiconductor material including indium with a first percentage of indium content. The barrier layer includes a second group III-V semiconductor material including indium with a second percentage of indium content. The first group III-V semiconductor material and the second group III-V semiconductor material further includes phosphorus. The second percentage of indium content is less than the first percentage of indium content.

    SEMICONDUCTOR DEVICE
    18.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240079524A1

    公开(公告)日：2024-03-07

    申请号：US18242758

    申请日：2023-09-06

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Jen HSUEH ,  Shih-Chang LEE ,  Kuo-Feng HUANG ,  Wen-Luh LIAO ,  Jiong-Chaso SU ,  Yi-Chieh LIN ,  Hsuan-Le LIN

    IPC: H01L33/30 ,  H01L33/04

    CPC classification number: H01L33/30 ,  H01L33/04

    Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

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