公开(公告)号：US20200343402A1

公开(公告)日：2020-10-29

申请号：US16956366

申请日：2018-12-20

Applicant: First Solar, Inc.

Inventor： Paul King ,  Xiaoping Li ,  Roger Malik ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/103 ,  H01L31/0296 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can have an energy side configured to be exposed to a light source. The photovoltaic device can include an absorber layer. The absorber layer can include a first surface facing the energy side and a thickness defined between the first surface and a second surface. The absorber layer can include mercury having a mole fraction y, cadmium having a mole fraction (1−y), and tellurium. The mole fraction y of the mercury can vary through the thickness of the absorber layer with distance from the first surface of the absorber layer.

公开(公告)号：US20240063316A1

公开(公告)日：2024-02-22

申请号：US18380519

申请日：2023-10-16

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20220285569A1

公开(公告)日：2022-09-08

申请号：US17751189

申请日：2022-05-23

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US20210143288A1

公开(公告)日：2021-05-13

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20210036178A1

公开(公告)日：2021-02-04

申请号：US16966424

申请日：2019-01-14

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/18 ,  H01L31/0296 ,  H01L31/073

Abstract: According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.

公开(公告)号：US20200381567A1

公开(公告)日：2020-12-03

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20150040970A1

公开(公告)日：2015-02-12

申请号：US14452306

申请日：2014-08-05

Applicant: First Solar, Inc.

Inventor： Raffi Garabedian ,  Roger Malik ,  Jeremy Theil ,  Jigish Trivedi ,  Ming Yu

IPC: H01L31/0304 ,  C23C16/22 ,  H01L21/64 ,  H01L31/18

CPC classification number: H01L31/0304 ,  C23C14/243 ,  C23C14/568 ,  C23C16/22 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/64 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/03046 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/184 ,  H01L2221/67 ,  Y02E10/544 ,  Y02P70/521

Abstract: An inline vacuum deposition system contains thermal source pairs configured in adjacent deposition zones. Dopant sources allow the electrical characteristics of the sequentially formed layers to be controlled for a preferred deposition growth profile.

Abstract translation: 在线真空沉积系统包含配置在相邻沉积区中的热源对。 掺杂源允许顺序形成的层的电特性被控制用于优选的沉积生长曲线。