公开(公告)号：US20200381567A1

公开(公告)日：2020-12-03

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US11502212B2

公开(公告)日：2022-11-15

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US11450778B2

公开(公告)日：2022-09-20

申请号：US16305455

申请日：2017-05-31

Applicant: First Solar, Inc.

Inventor： Kenneth Ring ,  William H. Huber ,  Hongying Peng ,  Markus Gloeckler ,  Gopal Mor ,  Feng Liao ,  Zhibo Zhao ,  Andrei Los

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

公开(公告)号：US20140166088A1

公开(公告)日：2014-06-19

申请号：US13719440

申请日：2012-12-19

Applicant: First Solar, Inc.

Inventor： Jongwoo Choi ,  Hongying Peng ,  Jinbo Coo

IPC: H01L31/0264 ,  H01L31/18

CPC classification number: H01L31/1884 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

Abstract: An article, such as a photovoltaic device, and methods for making such articles, are provided. For example, one embodiment is an article comprising a plurality of layers comprising an absorber layer and a window stack. The window stack comprises antimony.

Abstract translation: 提供了诸如光伏器件的制品以及制造这种物品的方法。 例如，一个实施例是包括多个包括吸收层和窗口叠层的层的制品。 窗户堆叠包括锑。

公开(公告)号：US20230082990A1

公开(公告)日：2023-03-16

申请号：US17986747

申请日：2022-11-14

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.