公开(公告)号：US11211239B2

公开(公告)日：2021-12-28

申请号：US16786542

申请日：2020-02-10

Applicant: Gigaphoton Inc.

Inventor： Atsushi Ueda ,  Takashi Saito

IPC: H01J61/28 ,  H01J61/02 ,  H01J61/12

Abstract: An EUV light generation apparatus includes: a chamber; an EUV light condensing mirror positioned inside the chamber and having a reflective surface that determines a first focal point and a second focal point, the reflective surface and the second focal point being positioned on respective sides of a first surface; at least one magnet configured to generate a magnetic field at and around the first focal point; a first gas supply unit configured to supply first gas to the reflective surface in the chamber and opened near an outer peripheral part of the reflective surface; a second gas supply unit configured to supply second gas into the chamber and opened at a position between the first surface and the second focal point; and a discharge device configured to discharge gas inside the chamber and opened at a position between the first focal point and the at least one magnet.

公开(公告)号：US10990016B2

公开(公告)日：2021-04-27

申请号：US16598042

申请日：2019-10-10

Applicant: Gigaphoton Inc.

Inventor： Atsushi Ueda

IPC: H05G2/00 ,  G03F7/20 ,  G03F1/24 ,  H01L21/3065

Abstract: An extreme ultraviolet light generation device includes: a chamber (2) having inside a plasma generating region (22) in which plasma is generated from a droplet of a target substance; an EUV light focusing mirror (23) having a reflection surface (23A) that reflects EUV light generated by the droplet being turned into the plasma in the plasma generating region; a magnetic field generation unit configured to generate a magnetic field ML for converging, toward a wall of the chamber, a charged particle generated by the droplet being turned into the plasma; and an etching gas supply unit (32) configured to supply etching gas along the reflection surface from an outer periphery of the EUV light focusing mirror, the etching gas supply unit being configured such that flow speed of etching gas supplied from one side of a plane S is higher than flow speed of etching gas supplied from the other side.

公开(公告)号：US10268119B2

公开(公告)日：2019-04-23

申请号：US15945672

申请日：2018-04-04

Applicant: GIGAPHOTON INC.

Inventor： Shinji Nagai ,  Atsushi Ueda ,  Takashi Saito

IPC: G03F7/20 ,  G21K5/02 ,  H05G1/00 ,  G21K1/06 ,  H01J37/32 ,  H05G2/00

Abstract: An extreme ultraviolet light generating device may include a chamber, an EUV light focusing mirror provided therein, including a reflection surface having a concave curved shape and an outer peripheral portion around an outer edge of the reflection surface, and configured to focus EUV light radiated from plasma generated when a target is irradiated with laser light, a gas supplying device including peripheral heads provided on or along the outer peripheral portion; and a discharge device including a discharge path forming a discharge port near the outer peripheral portion, and configured to discharge an ion or a particle from the discharge port. The peripheral heads each may blow out a gas flow from the outer peripheral portion or a vicinity thereof along the reflection surface, and allow gas flows to join on the reflection surface to thereby form a gas flow along the reflection surface toward the discharge port.

公开(公告)号：US11366394B2

公开(公告)日：2022-06-21

申请号：US17492280

申请日：2021-10-01

Applicant: Gigaphoton Inc.

Inventor： Koichiro Koge ,  Atsushi Ueda ,  Takayuki Osanai

IPC: G03F7/20 ,  G21K1/06 ,  H05G2/00 ,  H01S3/16 ,  H01S3/223

Abstract: An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance LSTOP [mm] calculated by the following equation: LSTOP=272.8·EAVG0.4522·P−1 EAVG [eV] representing average kinetic energy of ions generated in the plasma generation region and P [Pa] representing a gas pressure inside the first partition wall.

公开(公告)号：US11350514B2

公开(公告)日：2022-05-31

申请号：US17160486

申请日：2021-01-28

Applicant: Gigaphoton Inc.

Inventor： Koichiro Koge ,  Atsushi Ueda ,  Takayuki Osanai

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.