公开(公告)号：US20140277626A1

公开(公告)日：2014-09-18

申请号：US14289773

申请日：2014-05-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Shoji IKUHARA ,  Toshihiro MORISAWA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G05B13/048 ,  G05B2219/31357 ,  H01J37/32935

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.

Abstract translation: 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制循环中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。

公开(公告)号：US20130274908A1

公开(公告)日：2013-10-17

申请号：US13859812

申请日：2013-04-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Teruo NAKATA ,  Keita NOGI ,  Satomi INOUE

IPC: G05B15/02

CPC classification number: G05B15/02 ,  G05B19/41865 ,  G05B2219/32328 ,  G05B2219/45031 ,  Y02P90/083 ,  Y02P90/18 ,  Y02P90/20 ,  Y02P90/26 ,  Y02P90/265 ,  Y02P90/28

Abstract: Provided is a method that may quickly and simply select the allocation of the type of wafers to the processing chamber having a higher productivity in a semiconductor processing device in which a plurality of conveyance robots is disposed in a conveyance mechanism to which a processing chamber is connected and an object to be processed is delivered between the plurality of conveyance robots, when processings are performed on a plurality of types of wafers in parallel. From the information on the arrangement of the processing chambers of the semiconductor processing device and input type of wafers to be processed, the processing chamber allocation candidate is comprehensively generated and a simulation that manufactures all processing targets for each of the processing chamber allocation candidates is performed to calculate a productivity and the candidates are displayed in the order from a higher productivity to support the adoption of a user.

Abstract translation: 提供了一种方法，其可以在半导体处理装置中快速简单地选择对具有较高生产率的处理室的类型的分配，其中多个输送机器人设置在处理室被连接到的输送机构中 并且当在多个类型的晶片上并行执行处理时，在多个输送机器人之间传送被处理物体。 根据关于半导体处理装置的处理室的布置的信息和要处理的晶片的输入类型，综合地生成处理室分配候选，并且执行为处理室分配候选中的每一个生成所有处理目标的模拟 计算生产率，候选人按照更高的生产率显示顺序，以支持用户的采用。

公开(公告)号：US20200035445A1

公开(公告)日：2020-01-30

申请号：US16286303

申请日：2019-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Hao XU ,  Hiroshige UCHIDA ,  Shigeru Nakamoto ,  Kousuke FUKUCHI ,  Satomi INOUE

IPC: H01J37/22 ,  H01J37/32

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.

公开(公告)号：US20180269042A1

公开(公告)日：2018-09-20

申请号：US15982827

申请日：2018-05-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: H01J37/32

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

公开(公告)号：US20160225681A1

公开(公告)日：2016-08-04

申请号：US14825098

申请日：2015-08-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/3065 ,  G01N21/68 ,  H01L21/67

CPC classification number: G01N21/68 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/67253

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Abstract translation: 等离子体处理装置，等离子体处理方法和等离子体处理分析方法，其中在用于光谱测量数据的波长，时间间隔和可变参数中确定用于改变蚀刻条件的用于控制的波长，时间间隔和蚀刻条件参数的适当组合 以确保稳定的蚀刻条件。 具体地说，对于波长，时间间隔和蚀刻条件参数的两种以上的组合中的每一种，获得代表波长和时间间隔的发光强度与蚀刻相关性的回归方程。 此外，对于每个组合，当为蚀刻条件参数设定的值改变时，根据回归方程计算出变化量。 在组合中，将变化量最小的组合确定为用于控制的波长，时间间隔和改变的蚀刻条件参数的组合。

公开(公告)号：US20160211186A1

公开(公告)日：2016-07-21

申请号：US14851744

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32963

Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.

Abstract translation: 提供一种能够进行稳定的端点检测的半导体晶片的处理装置和处理方法。 在等离子体处理装置或方法中，其中包括预先形成在安装在位于真空容器内的处理室内的样品台上的晶片的表面上的多个膜层的膜结构的处理目标膜层，通过 使用与处理室形成的等离子体，使用由多个不同时间间隔内的光的接收结果构成的数据来检测多个波长的光的强度，该光接收器从内部接收多个波长的光 的处理室。

公开(公告)号：US20200294777A1

公开(公告)日：2020-09-17

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kosa HIROTA ,  Masahiro SUMIYA ,  Koichi NAKAUNE ,  Nanako TAMARI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US20170372878A1

公开(公告)日：2017-12-28

申请号：US15677260

申请日：2017-08-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito TOGAMI ,  Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32458 ,  H01J37/32908 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/0266 ,  H01J2237/2445 ,  H01J2237/3341

Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

公开(公告)号：US20170178874A1

公开(公告)日：2017-06-22

申请号：US15277272

申请日：2016-09-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yohei KAWAGUCHI ,  Tatehito USUI ,  Masahito TOGAMI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  G01N21/84 ,  G01B11/06

CPC classification number: H01J37/32972 ,  G01B11/0616 ,  G01N21/84 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32935 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.

公开(公告)号：US20160351405A1

公开(公告)日：2016-12-01

申请号：US15060822

申请日：2016-03-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Kousuke FUKUCHI ,  Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3081 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.

Abstract translation: 等离子体处理方法包括在处理室中形成等离子体; 并对预先设置在包括多个膜层的晶片的上表面上的膜结构进行处理的膜进行蚀刻。 膜结构包括：下膜，其包括至少一个膜层和凹槽结构; 以及包括至少一个覆盖所述凹槽结构的内侧和上端的薄膜层的上部薄膜。 等离子体处理方法包括：通过蚀刻去除上部膜，直到下部膜的槽结构的上端露出; 对槽结构内的上膜的膜层进行蚀刻; 并且通过在完成去除时使用下膜的沟槽结构内的膜层的厚度值来确定终点。