公开(公告)号：US20190170653A1

公开(公告)日：2019-06-06

申请号：US16272354

申请日：2019-02-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: G01N21/68 ,  H01J37/32

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

公开(公告)号：US20180068909A1

公开(公告)日：2018-03-08

申请号：US15437026

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Yuji NAGATANI ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.

公开(公告)号：US20160284610A1

公开(公告)日：2016-09-29

申请号：US14852189

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

Abstract translation: 一种处理层结构的等离子体处理方法，其特征在于，预先形成在设置在真空容器内的处理室中的晶片的上表面上并且具有被处理层和底层涂层的处理层结构， 通过将实际图案数据与实际图案数据进行比较的结果来计算在待处理的层处理的层的蚀刻量的步骤，该检测图案数据通过组合通过处理该层获得的干涉光的参数波长的两种强度图案而获得 具有不同厚度的三层或多层底涂层的结构以及处理任何晶片之前要处理的层和具有作为在任何晶片上的层结构的处理期间获得的干涉光的波长的参数的面积图案 。

公开(公告)号：US20190051502A1

公开(公告)日：2019-02-14

申请号：US15892041

申请日：2018-02-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Shota UMEDA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US20160177449A1

公开(公告)日：2016-06-23

申请号：US14973592

申请日：2015-12-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: C23C16/513

CPC classification number: H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Abstract translation: 使用等离子体处理设置在处理室中的晶片的等离子体装置包括设置在光源和另一窗口之间的一个窗口，另一个窗口，光接收单元，光源和光分路单元， 通过光源到朝向处理室的光路和沿另一方向的光路，并且从另一窗口反射处理室中的光;以及检测单元，其检测从等离子体发射的光并由 光接收单元使用一个分支光和其他分支和反射光。 该装置根据基于检测结果调整的处理条件处理晶片。

公开(公告)号：US20140294555A1

公开(公告)日：2014-10-02

申请号：US13975612

申请日：2013-08-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michinori KAWAGUCHI ,  Satomi INOUE ,  Yoshiro SUEMITSU ,  Keita NOGI

IPC: H01L21/677

CPC classification number: H01L21/67745

Abstract: A method for operating a vacuum processing apparatus, the vacuum processing apparatus including: a plurality of cassette stands on which a cassette capable of housing a plurality of wafers therein can be placed; a plurality of vacuum processing vessels each having a processing chamber arranged therein, wherein the wafer is arranged and processed in the processing chamber; and at least one transport robot transporting the wafer on a transport path between either one of the plurality of cassettes and the plurality of vacuum processing vessels, the vacuum processing apparatus sequentially transporting in a predetermined transport order the plurality of wafers from either one of the plurality of cassettes to a predetermined one of the plurality of vacuum processing vessels and processing the plurality of wafers. The method includes a number determining step, a remaining-time determining step and a transport order skip step.

Abstract translation: 一种真空处理装置的操作方法，所述真空处理装置包括：能够放置能够容纳多个晶片的盒的多个盒架; 多个真空处理容器，每个具有布置在其中的处理室，其中所述晶片在所述处理室中被布置和处理; 以及至少一个传送机器人，其将所述晶片传送到所述多个盒中的任一个与所述多个真空处理容器之间的传送路径上，所述真空处理装置以预定的传送顺序依次传送来自所述多个盒中的任一个的多个晶片 将多个真空处理容器中的一个预定的一个放入盒中并处理多个晶片。 该方法包括数字确定步骤，剩余时间确定步骤和传输顺序跳过步骤。

公开(公告)号：US20130108400A1

公开(公告)日：2013-05-02

申请号：US13633155

申请日：2012-10-02

Applicant: Hitachi High-Technologies Corporation

Inventor： Keita NOGI ,  Teruo NAKATA ,  Yoshiro SUEMITSU ,  Michinori KAWAGUCHI ,  Satomi INOUE

IPC: H01L21/677

CPC classification number: H01L21/67276

Abstract: Transportation control in a vacuum processing device with high transportation efficiency without lowering throughput is provided. A control unit is configured to update in real time and holds device state information showing an action state of each of a process chamber, a transportation mechanism unit, a buffer room, and a holding mechanism unit, the presence of a process subject member, and a process state thereof; select a transport algorithm from among transport algorithm judgment rules that are obtained by simulating in advance a plurality of transport algorithms for controlling transportation of a process subject member for each condition of a combination of the number and arrangement of the process chambers and process time of a process subject member based on the device state information and process time of the process subject member; and compute a transport destination of the process subject member based on the selected transport algorithm.

Abstract translation: 提供了具有高运输效率而不降低生产量的真空处理装置中的运输控制。 控制单元被配置为实时更新并保持表示处理室，运送机构单元，缓冲室和保持机构单元的动作状态的装置状态信息，处理对象构件的存在和 其处理状态; 从传输算法判断规则中选择一种传输算法，该传输算法判断规则是通过预先模拟用于控制处理室的数量和布置的组合的每个条件的处理对象构件的传送的多个传输算法而获得的，以及处理室的处理时间 基于过程主体的设备状态信息和处理时间处理主题成员; 并基于所选择的传输算法计算过程主体成员的传输目的地。

公开(公告)号：US20180277377A1

公开(公告)日：2018-09-27

申请号：US15714181

申请日：2017-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Soichiro ETO ,  Takeshi OHMORI ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.

公开(公告)号：US20180025894A1

公开(公告)日：2018-01-25

申请号：US15445203

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  G01J3/28

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

公开(公告)号：US20170358504A1

公开(公告)日：2017-12-14

申请号：US15673151

申请日：2017-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.