Photostructured Mechanical Devices and Methods for Making Same
    11.
    发明申请
    Photostructured Mechanical Devices and Methods for Making Same 审中-公开
    光电结构机械设备及其制作方法

    公开(公告)号:US20110167941A1

    公开(公告)日:2011-07-14

    申请号:US12686976

    申请日:2010-01-13

    Inventor: Henry Helvajian

    CPC classification number: B81C1/00634 B81B2201/051 B81B2203/0338

    Abstract: A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices may include one or more of chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

    Abstract translation: 使用用于将器件嵌入可光可陶瓷陶瓷体积内的光学结构化工艺步骤来处理可光电陶瓷,该器件可以包括化学,机械,电子,电磁,光学和声学设备中的一种或多种,​​所有这些都部分地通过在 陶瓷或通过陶瓷体的表面端口设置器件材料,使用内部连接和表面接口互连这些器件。

    Pulse modulation laser writing system
    12.
    发明授权
    Pulse modulation laser writing system 有权
    脉冲调制激光写入系统

    公开(公告)号:US07526357B2

    公开(公告)日:2009-04-28

    申请号:US11010878

    申请日:2004-12-13

    CPC classification number: B23K26/0861 B23K26/0626

    Abstract: A pulse modulation laser writing system generates a motion control file for controlled motion of a sample under modulated laser beam exposure and generates a laser script file for generating a sequence of laser writing processes, such as, ablation, welding, texturing, and dosing, the sample while under motion control. The system enables laser writing processing of complex multimaterial samples in a single manufacturing process.

    Abstract translation: 脉冲调制激光写入系统产生运动控制文件,用于在调制激光束曝光下对样本进行受控运动,并产生用于产生激光写入过程序列的激光脚本文件,例如消融,焊接,纹理和计量。 样品在运动控制下。 该系统能够在单个制造过程中对复杂多材料样品进行激光写入处理。

    Photostructured optical devices and methods for making same
    13.
    发明授权
    Photostructured optical devices and methods for making same 有权
    光结构光学器件及其制造方法

    公开(公告)号:US09146377B2

    公开(公告)日:2015-09-29

    申请号:US12686986

    申请日:2010-01-13

    Inventor: Henry Helvajian

    Abstract: A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices including chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

    Abstract translation: 使用光电结构化工艺步骤处理可光致结构陶瓷,用于将可见光陶瓷体积中的器件嵌入,所述器件包括化学,机械,电子,电磁,光学和声学器件,其部分通过在陶瓷内产生器件材料或通过设置 器件材料通过陶瓷体积的表面端口,其中设备使用内部连接和表面接口互连。

    Photostructured Optical Devices and Methods for Making Same
    15.
    发明申请
    Photostructured Optical Devices and Methods for Making Same 有权
    光电装置及其制造方法

    公开(公告)号:US20110170210A1

    公开(公告)日:2011-07-14

    申请号:US12686986

    申请日:2010-01-13

    Inventor: Henry Helvajian

    Abstract: A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices including chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

    Abstract translation: 使用光电结构化工艺步骤处理可光致结构陶瓷,用于将可见光陶瓷体积中的器件嵌入,所述器件包括化学,机械,电子,电磁,光学和声学器件,其部分通过在陶瓷内产生器件材料或通过设置 器件材料通过陶瓷体积的表面端口,其中设备使用内部连接和表面接口互连。

    Ultraminiature broadband light source and method of manufacturing same
    16.
    发明授权
    Ultraminiature broadband light source and method of manufacturing same 失效
    超微型宽带光源及其制造方法

    公开(公告)号:US07755292B1

    公开(公告)日:2010-07-13

    申请号:US11625545

    申请日:2007-01-22

    CPC classification number: H01K1/14 G01J3/10 H01K1/18 H01K7/00

    Abstract: An ultraminiature light source using a double-spiral shaped tungsten filament includes end contact portions which are separated to allow for radial and length-wise unwinding of the spiral. The double-spiral filament is spaced relatively far apart at the end portions thereof so that contact between portions of the filament upon expansion is avoided. The light source is made by fabricating a double-spiral ultraminiature tungsten filament from tungsten foil and housing the filament in a ceramic package having a reflective bottom and a well wherein the filament is suspended. A vacuum furnace brazing process attaches the filament to contacts of the ceramic package. Finally, a cover with a transparent window is attached onto the top of the ceramic package by solder reflow in a second vacuum furnace process to form a complete hermetically sealed package.

    Abstract translation: 使用双螺旋形钨丝的超微型光源包括端部接触部分,其被分离以允许螺旋的径向和纵向展开。 双螺旋丝在其端部处间隔相对较远,从而避免了在膨胀时细丝部分之间的接触。 光源通过从钨箔制造双螺旋超薄钨丝制成,并将灯丝容纳在具有反射底部和阱的陶瓷封装中,其中灯丝被悬挂。 真空炉钎焊工艺将灯丝连接到陶瓷封装的触点。 最后,通过在第二真空炉工艺中通过回流焊接将具有透明窗口的盖子附接到陶瓷封装的顶部,以形成完整的密封封装。

    Laser assisted chemical etching method for release microscale and nanoscale devices
    17.
    发明授权
    Laser assisted chemical etching method for release microscale and nanoscale devices 有权
    激光辅助化学蚀刻方法用于释放微米级和纳米级器件

    公开(公告)号:US07419915B2

    公开(公告)日:2008-09-02

    申请号:US11061485

    申请日:2005-02-17

    Abstract: A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.

    Abstract translation: 使用蚀刻剂和激光器进行局部精确加热的方法使得可以通过改进的工艺控制精确地蚀刻和释放MEMS器件,同时扩大用于制造MEMS的材料的数量,包括埋入并随后从体硅释放的二氧化硅图案化膜, 作为图案化结构的释放的直接写入方法,其能够仅去除允许器件执行精确释放所需的材料,之后可以进一步处理散装材料以用于额外的电气或封装功能。

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