公开(公告)号：US10979021B2

公开(公告)日：2021-04-13

申请号：US16210582

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Peter Pfann ,  Stefan Helmut Schmalzl ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H03H7/01 ,  H03H9/64 ,  H03H9/52 ,  H03H9/05 ,  H03H9/60 ,  H03H9/58 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/02 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: In accordance with an embodiment, a method of operating an RF system includes generating a first RF signal having a first frequency; filtering the generated first RF signal to form a first filtered transmitted signal; producing a first coupled signal and a first transmitted signal from the first filtered transmitted signal; transmitting the first transmitted signal; transmitting a second RF signal having a second frequency; bandpass filtering the first coupled signal to form a first tunable bandpass filtered signal; and measuring a parameter of the first tunable bandpass filtered signal.

公开(公告)号：US20190190490A1

公开(公告)日：2019-06-20

申请号：US16210703

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Ruediger Bauder ,  Andreas Bogner ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/205 ,  H03H7/01

CPC classification number: H03H9/542 ,  H01L41/187 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/21157 ,  H03H3/02 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/0161 ,  H03H7/12 ,  H03H7/1741 ,  H03H7/463 ,  H03H9/0004 ,  H03H9/02007 ,  H03H9/02015 ,  H03H9/02031 ,  H03H9/0547 ,  H03H9/175 ,  H03H9/205 ,  H03H9/48 ,  H03H9/52 ,  H03H9/54 ,  H03H9/547 ,  H03H9/584 ,  H03H9/585 ,  H03H9/587 ,  H03H9/588 ,  H03H9/589 ,  H03H9/60 ,  H03H9/605 ,  H03H9/6479 ,  H03H9/66 ,  H03H9/70 ,  H03H11/1291 ,  H03H2007/013 ,  H03H2009/02204 ,  H03H2210/025 ,  H03H2210/026 ,  H03J1/0008 ,  H03J3/20 ,  H04B1/0057 ,  H04B1/006 ,  H04B1/0475 ,  H04B1/10 ,  H04B1/1036 ,  H04B1/18 ,  H04B1/40 ,  H04B1/50 ,  H04B1/525

Abstract: A notch filter includes an inductor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

公开(公告)号：US20190181827A1

公开(公告)日：2019-06-13

申请号：US16210756

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Ruediger Bauder

IPC: H03H9/02 ,  H03H9/17 ,  H03J3/20 ,  H03H7/01

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

公开(公告)号：US20180294790A1

公开(公告)日：2018-10-11

申请号：US15934387

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Carsten Ahrens ,  Ruediger Bauder

IPC: H03H3/02 ,  H03H9/58

Abstract: Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.

公开(公告)号：US20140209852A1

公开(公告)日：2014-07-31

申请号：US13754986

申请日：2013-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/0251 ,  H01L23/367 ,  H01L23/3738 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/49562 ,  H01L23/525 ,  H01L23/62 ,  H01L24/32 ,  H01L27/24 ,  H01L27/2436 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/41725 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611 ,  H01L45/128 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.

Abstract translation: 半导体器件包括在半导体本体中包括多个晶体管单元的晶体管，每个晶体管单元包括控制端子和第一和第二负载端子。 半导体器件还包括电连接第一负载端子的第一电连接。 半导体器件还包括电连接第二负载端子的第二电连接。 晶体管还包括在150℃和400℃之间的相变温度Tc显示出固相变化的相变材料。

公开(公告)号：US20190181837A1

公开(公告)日：2019-06-13

申请号：US16210670

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Stefan Helmut Schmalzl ,  Peter Pfann ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/66 ,  H03H9/48 ,  H03H9/00 ,  H04B1/00 ,  H04B1/50 ,  H04B1/04 ,  H03H7/01

Abstract: In accordance with an embodiment, an RF system includes a transmit path having a transmit RF filter and an adjustable transmit phase shifter/matching network coupled between the transmit RF filter and a transmit antenna port, where the adjustable transmit phase shifter/matching network is configured to transform an impedance of the transmit RF filter at a receive frequency from a first lower impedance to a first higher impedance at the transmit antenna port; and a receive path having a receive RF filter and an adjustable receive phase shifter/matching network coupled between the receive RF filter and a receive antenna port, where the adjustable receive phase shifter/matching network is configured to transform an impedance of the receive RF filter at a transmit frequency from a second lower impedance to a second higher impedance at the receive antenna port.

公开(公告)号：US20190181832A1

公开(公告)日：2019-06-13

申请号：US16210610

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Stefan Helmut Schmalzl ,  Peter Pfann ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H03H7/01 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H03H7/46 ,  H04B1/18 ,  H04B1/10

Abstract: In accordance with an embodiment, a method of operating an RF system includes filtering a wideband RF signal using an adjustable center frequency bandpass filter to produce a filtered RF signal; amplifying the filtered RF signal to produce an amplified RF signal; and band stop filtering the amplified RF signal to produce a band stopped RF signal.

公开(公告)号：US20190181825A1

公开(公告)日：2019-06-13

申请号：US16210637

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Stefan Helmut Schmalzl ,  Peter Pfann ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H7/12 ,  H03H7/46 ,  H03H7/01 ,  H04B1/00 ,  H04B1/525

Abstract: In accordance with an embodiment, an RF system includes a transmit path having a first tunable transmit band stop filter, and a power amplifier coupled to an output of the first tunable transmit band stop filter, where the first tunable transmit band stop filter is configured reject a receive frequency and pass a transmit frequency; a receive path comprising an LNA; and a duplex filter having a transmit path port coupled to an output of the power amplifier, a receive path port coupled to an input of the LNA, and an antenna port, where the duplex filter is configured to pass the transmit frequency and reject the receive frequency between the antenna port and the transmit path port, pass the receive frequency and reject the transmit frequency between the antenna port and the receive path port.

公开(公告)号：US09756726B2

公开(公告)日：2017-09-05

申请号：US14071296

申请日：2013-11-04

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Peter Scherl ,  Magdalena Hoier ,  Hans-Joerg Timme

IPC: H05K7/10 ,  H05K7/12 ,  H05K1/11 ,  H05K1/14 ,  H01L23/00 ,  H05K3/36 ,  H05K3/32 ,  H05K3/40

CPC classification number: H05K1/11 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45028 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45184 ,  H01L2224/4554 ,  H01L2224/48091 ,  H01L2224/48092 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48511 ,  H01L2224/85 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/181 ,  H05K1/111 ,  H05K1/14 ,  H05K3/32 ,  H05K3/36 ,  H05K3/4015 ,  H05K2201/04 ,  H05K2203/0285 ,  Y10T29/49126 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2224/48247 ,  H01L2224/43 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: An electronic device may comprise a semiconductor element and a wire bond connecting the semiconductor element to a substrate. Using a woven bonding wire may improve the mechanical and electrical properties of the wire bond. Furthermore, there may be a cost benefit. Woven bonding wires may be used in any electronic device, for example in power devices or integrated logic devices.

公开(公告)号：US20160104780A1

公开(公告)日：2016-04-14

申请号：US14975565

申请日：2015-12-18

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Franz Hirler ,  Francisco Javier Santos Rodriguez

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/04 ,  H01L21/3065 ,  H01L21/324 ,  H01L29/45 ,  H01L21/78 ,  H01L21/306

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/306 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/78 ,  H01L29/045 ,  H01L29/45 ,  H01L29/7846 ,  H01L29/7848

Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.

Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。