公开(公告)号：US09842832B2

公开(公告)日：2017-12-12

申请号：US15183179

申请日：2016-06-15

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC: H01L25/16 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H05K1/18

CPC classification number: H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

公开(公告)号：US20170301625A1

公开(公告)日：2017-10-19

申请号：US15636117

申请日：2017-06-28

Applicant: Intel Corporation

Inventor： Ravindranath V. Mahajan ,  Christopher J. Nelson ,  Omkar G. Karhade ,  Feras Eid ,  Nitin A. Deshpande ,  Shawna M. Liff

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/367 ,  H01L25/065

CPC classification number: H01L23/5381 ,  H01L21/563 ,  H01L21/568 ,  H01L23/145 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24145 ,  H01L2224/24245 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92224 ,  H01L2224/92242 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/12042 ,  H01L2924/1432 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/0665

Abstract: Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

公开(公告)号：US20160300824A1

公开(公告)日：2016-10-13

申请号：US15183179

申请日：2016-06-15

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC: H01L25/16 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

公开(公告)号：US12272650B2

公开(公告)日：2025-04-08

申请号：US16804835

申请日：2020-02-28

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Debendra Mallik ,  Nitin A. Deshpande ,  Amruthavalli Pallavi Alur

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/13 ,  H01L23/498 ,  H01L23/522

Abstract: Embodiments may relate to a microelectronic package that includes a substrate with a cavity therein. A component may be positioned within the substrate, and exposed by the cavity. A solder bump may be positioned within the cavity and coupled with the component, and a bridge die may be coupled with the solder bump. Other embodiments may be described or claimed.

公开(公告)号：US20250112168A1

公开(公告)日：2025-04-03

申请号：US18477813

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Gwang-Soo Kim ,  Harini Kilambi ,  Han Ju Lee

IPC: H01L23/544 ,  H01L23/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/065

Abstract: Alignment markers are created on a carrier wafer prior to attachment of integrated circuit dies to the carrier wafer. The alignment markers can be used in aligning integrated circuit dies to the carrier wafer during attachment of the integrated circuit dies to the carrier wafer. A reconstituted wafer can be created from the integrated circuit dies attached to the carrier wafer and the alignment markers are part of the reconstituted wafer. The alignment markers can further be used to align a wafer bonding layer to the reconstituted wafer. The wafer bonding layer can be used in attaching the reconstituted wafer to an interposer, another wafer, or another microelectronic structure. The alignment markers are located outside an outer lateral boundary of the integrated circuit dies (such as between integrated circuit dies) and are not connected to any metal lines in the integrated circuit dies in the reconstituted wafer.

公开(公告)号：US20250060531A1

公开(公告)日：2025-02-20

申请号：US18938732

申请日：2024-11-06

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Xiaoqian Li ,  Tarek A. Ibrahim ,  Ravindranath Vithal Mahajan ,  Nitin A. Deshpande

IPC: G02B6/122 ,  G02B6/12

Abstract: Photonic packages and device assemblies that include photonic integrated circuits (PICs) coupled to optical lenses on lateral sides of the PICS. An example photonic package comprises a package support, an integrated circuit (IC), an insulating material, a PIC having an active side and a lateral side substantially perpendicular to the active side. At least one optical structure is on the active side. A substantial portion of the active side is in contact with the insulating material, and the PIC is electrically coupled to the package support and to the IC. The photonic package further includes an optical lens coupled to the PIC on the lateral side. In some embodiments, the photonic package further includes an interposer between the PIC or the IC and the package support.

公开(公告)号：US20250006653A1

公开(公告)日：2025-01-02

申请号：US18346108

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Bhaskar Jyoti Krishnatreya ,  Francisco Maya ,  Siyan Dong ,  Alveera Gill ,  Tan Nguyen ,  Keith E. Zawadzki

IPC: H01L23/544 ,  H01L23/00 ,  H01L25/065

Abstract: An apparatus comprising an integrated circuit device comprising a fiducial area of a first layer, the fiducial area comprising a metal area and a metal free area; and a plurality of zones that are metal free in multiple layers adjacent to the first layer, wherein the zones are defined by a footprint based on the fiducial area of the first layer and a second fiducial area of a second integrated circuit device, the footprint comprising multiple slits.

公开(公告)号：US11923307B2

公开(公告)日：2024-03-05

申请号：US16902958

申请日：2020-06-16

Applicant: Intel Corporation

Inventor： Bai Nie ,  Gang Duan ,  Omkar G. Karhade ,  Nitin A. Deshpande ,  Yikang Deng ,  Wei-Lun Jen ,  Tarek A. Ibrahim ,  Sri Ranga Sai Boyapati ,  Robert Alan May ,  Yosuke Kanaoka ,  Robin Shea McRee ,  Rahul N. Manepalli

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L23/5381 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5386

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US11887962B2

公开(公告)日：2024-01-30

申请号：US16902927

申请日：2020-06-16

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Sairam Agraharam ,  Edvin Cetegen ,  Anurag Tripathi ,  Malavarayan Sankarasubramanian ,  Jan Krajniak ,  Manish Dubey ,  Jinhe Liu ,  Wei Li ,  Jingyi Huang

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L24/30 ,  H01L23/49827 ,  H01L23/5384 ,  H01L24/17 ,  H01L2224/1703

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US20240006332A1

公开(公告)日：2024-01-04

申请号：US17856801

申请日：2022-07-01

Applicant: Intel Corporation

Inventor： Dimitrios Antartis ,  Nitin A. Deshpande ,  Siyan Dong ,  Omkar Karhade ,  Gwang-soo Kim ,  Shawna Liff ,  Siddhartha Mal ,  Debendra Mallik ,  Khant Minn ,  Haris Khan Niazi ,  Arnab Sarkar ,  Yi Shi ,  Botao Zhang

IPC: H01L23/544 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L23/544 ,  H01L24/08 ,  H01L23/481 ,  H01L2224/08145 ,  H01L2223/54426

Abstract: An integrated circuit (IC) device comprises a host component and an IC die directly bonded to the host component. The IC die comprises a substrate material layer and a die metallization level between the substrate material layer and host component. The IC die includes an upper die alignment fiducial between the die metallization level and host component. The upper die alignment fiducial at least partially overlaps one or more metallization features within the die metallization level. In embodiments, at least two orthogonal edges of the upper die alignment fiducial do not overlap any of the metallization features within the die metallization level. In embodiments, the IC die includes a lower die alignment fiducial between the substrate material layer and the die metallization level. The lower die alignment fiducial may at least partially overlap one or more second metallization features within a second die metallization level of the IC die.