公开(公告)号：US20230395445A1

公开(公告)日：2023-12-07

申请号：US17833650

申请日：2022-06-06

Applicant: Intel Corporation

Inventor： Srinivas V. Pietambaram ,  Kristof Darmawikarta ,  Tarek A. Ibrahim ,  Jeremy D. Ecton ,  Brandon Christian Marin ,  Gang Duan ,  Suddhasattwa Nad ,  Yi Yang ,  Benjamin T. Duong ,  Junxin Wang ,  Sameer R. Paital

IPC: H01L23/15 ,  H01L23/498 ,  H01L21/48 ,  H05K1/03 ,  H05K3/40

CPC classification number: H01L23/15 ,  H01L23/49827 ,  H01L21/486 ,  H05K1/0306 ,  H05K3/4061

Abstract: In one embodiment, a substrate includes a glass core layer defining a plurality of holes between a first side of the glass core layer and a second side of the glass core layer opposite the first side and a conductive metal inside the holes of the glass core layer. The conductive metal electrically couples the first side of the glass core layer and the second side of the glass core layer. The substrate also includes a dielectric material between the conductive metal and the inside surfaces of the holes of the glass core layer.

公开(公告)号：US20230197679A1

公开(公告)日：2023-06-22

申请号：US17558457

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Jason M. Gamba ,  Brandon C. Marin ,  Srinivas V. Pietambaram ,  Xiaoxuan Sun ,  Omkar G. Karhade ,  Xavier Francois Brun ,  Yonggang Li ,  Suddhasattwa Nad ,  Bohan Shan ,  Haobo Chen ,  Gang Duan

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L25/0652 ,  H01L24/16 ,  H01L24/14 ,  H01L24/73 ,  H01L24/13 ,  H01L23/5383 ,  H01L2224/16227 ,  H01L2224/14177 ,  H01L2224/73204 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01031

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

公开(公告)号：US11658055B2

公开(公告)日：2023-05-23

申请号：US16363426

申请日：2019-03-25

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Rahul Manepalli

IPC: H01L21/683 ,  H01L25/065 ,  H01L23/538

CPC classification number: H01L21/6836 ,  H01L23/5383 ,  H01L25/0655

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a package substrate having a first surface and a second surface opposite from the first surface, and a monolayer having a plurality of first molecules over the first surface of the package substrate. In an embodiment, the first molecules each comprise a first functional group attached to the first surface, and a first release moiety attached to the first functional group.

公开(公告)号：US20230090449A1

公开(公告)日：2023-03-23

申请号：US17448693

申请日：2021-09-23

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Gang Duan ,  Jeremy Ecton ,  Brandon Marin ,  Ravindranath Mahajan

IPC: H01L23/00

Abstract: Methods, systems, apparatus, and articles of manufacture to produce nano-roughened integrated circuit packages are disclosed. An example integrated circuit (IC) package includes a substrate, a semiconductor die, and a metal interconnect to electrically couple the semiconductor die to the substrate, the metal interconnect including a nano-roughened surface.

公开(公告)号：US20220406736A1

公开(公告)日：2022-12-22

申请号：US17352726

申请日：2021-06-21

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Srinivas Pietambaram ,  Suddhasattwa Nad ,  Jeremy Ecton

IPC: H01L23/64 ,  H01L23/15 ,  H01L23/48 ,  H01L49/02 ,  H01L21/768

Abstract: Disclosed herein are high-permeability magnetic thin films for coaxial metal inductor loop structures formed in through glass vias of a glass core package substrate, and related methods, devices, and systems. Exemplary coaxial metal inductor loop structures include a high-permeability magnetic layer within and on a surface of a through glass via extending through the glass core package substrate and a conductive layer on the high-permeability magnetic layer.

公开(公告)号：US20220352076A1

公开(公告)日：2022-11-03

申请号：US17243784

申请日：2021-04-29

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Brandon Marin ,  Srinivas Pietambaram ,  Suddhasattwa Nad

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/00

Abstract: An electronic substrate may be fabricated having at least two glass layers separated by an etch stop layer, wherein a bridge is embedded within one of the glass layers. The depth of a cavity formed for embedding the bridge is control by the thickness of the glass layer rather than by controlling the etching process used to form the cavity, which allows for greater precision in the fabrication of the electronic substrate. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

公开(公告)号：US20220102259A1

公开(公告)日：2022-03-31

申请号：US17033392

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Jieying Kong ,  Yiyang Zhou ,  Suddhasattwa Nad ,  Jeremy Ecton ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon Marin ,  Zhiguo Qian ,  Sarah Blythe ,  Bohan Shan ,  Jason Steill ,  Sri Chaitra Jyotsna Chavali ,  Leonel Arana ,  Dingying Xu ,  Marcel Wall

IPC: H01L23/498 ,  H01L21/48

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

公开(公告)号：US11257748B2

公开(公告)日：2022-02-22

申请号：US16623328

申请日：2017-06-30

Applicant: Intel Corporation

Inventor： Rahul N. Manepalli ,  Suddhasattwa Nad

IPC: H01L23/498 ,  H01L21/48

Abstract: The present disclosure provides a substrate for an integrated circuit. The substrate includes a dielectric layer. The substrate further includes a plurality of conductive elements at least partially embedded within the dielectric layer and having a substantially smooth outer surface. The substrate further includes an interlayer disposed between the individual conductive elements and the dielectric layer. The interlayer has a first surface comprising a plurality of protrusions interlocked with the dielectric layer and a second surface adhered to the outer surface of the individual conductive elements.

公开(公告)号：US20210289638A1

公开(公告)日：2021-09-16

申请号：US17336008

申请日：2021-06-01

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K3/18 ,  H05K5/00

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

公开(公告)号：US20200273787A1

公开(公告)日：2020-08-27

申请号：US16623328

申请日：2017-06-30

Applicant: Intel Corporation

Inventor： Rahul N. Manepalli ,  Suddhasattwa Nad

IPC: H01L23/498 ,  H01L21/48

Abstract: The present disclosure provides a substrate for an integrated circuit. The substrate includes a dielectric layer. The substrate further includes a plurality of conductive elements at least partially embedded within the dielectric layer and having a substantially smooth outer surface. The substrate further includes an interlayer disposed between the individual conductive elements and the dielectric layer. The interlayer has a first surface comprising a plurality of protrusions interlocked with the dielectric layer and a second surface adhered to the outer surface of the individual conductive elements.