公开(公告)号：US11621358B2

公开(公告)日：2023-04-04

申请号：US16808150

申请日：2020-03-03

Applicant: KANEKA CORPORATION

Inventor： Kunta Yoshikawa ,  Hisashi Uzu

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/20

Abstract: A solar cell in which performance degradation caused by an alkali component is suppressed. A solar cell is a back-contact solar cell that comprises a semiconductor substrate; a p-type semiconductor layer, and a first electrode layer corresponding thereto, layered sequentially on one part of the rear side of the semiconductor substrate; an n-type semiconductor layer, and a second electrode layer corresponding thereto, layered sequentially on another part of the rear side of the semiconductor substrate. One part of the n-type semiconductor layer lies directly atop one part of the adjacent p-type semiconductor layer. The first electrode layer is separate from the n-type semiconductor layer and covers the p-type semiconductor layer. The second electrode layer covers the entirety of an overlapping portion where the n-type semiconductor layer lies atop the p-type semiconductor layer.

公开(公告)号：US20190319149A1

公开(公告)日：2019-10-17

申请号：US16341848

申请日：2017-10-04

Applicant: KANEKA CORPORATION

Inventor： Kunihiro Nakano ,  Hisashi Uzu ,  Kenji Yamamoto

IPC: H01L31/054 ,  H02S40/20

Abstract: A photovoltaic device according to the present disclosure is provided with: a condensing optical system having chromatic aberration; a first photoelectric converter, which is arranged on an optical axis of the condensing optical system; and a second photoelectric converter, which is arranged on an outer peripheral side of the first photoelectric converter when viewed from an optical axis direction of the condensing optical system, and which has a bandgap lower than a bandgap of the first photoelectric converter, wherein the first photoelectric converter is arranged on an inner side of a rectangle that circumscribes a condensing region of absorbable longest-wavelength light determined based on the bandgap.

公开(公告)号：US10333016B2

公开(公告)日：2019-06-25

申请号：US15941818

申请日：2018-03-30

Applicant: Kaneka Corporation

Inventor： Hisashi Uzu ,  Masashi Hino ,  Mitsuru Ichikawa ,  Ryota Mishima ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H01L31/0725 ,  H01G9/20 ,  H01L51/44 ,  H01L31/028

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

公开(公告)号：US20180019361A1

公开(公告)日：2018-01-18

申请号：US15717303

申请日：2017-09-27

Applicant: Kaneka Corporation

Inventor： Ryota Mishima ,  Masashi Hino ,  Hisashi Uzu ,  Tomomi Meguro

IPC: H01L31/0747 ,  H01G9/20 ,  H01G9/00 ,  H01L31/0216 ,  H01L31/0236

CPC classification number: H01L31/0747 ,  H01G9/0029 ,  H01G9/2009 ,  H01L27/301 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/0725 ,  H01L51/422 ,  Y02E10/549 ,  Y02P70/521

Abstract: A photoelectric conversion device includes, arranged in the following order from a light-receiving side: a transparent electroconductive layer; a first photoelectric conversion unit that is a perovskite-type photoelectric conversion unit; and a second photoelectric conversion unit. The first photoelectric conversion unit includes, arranged in the following order from the light-receiving side: a hole transporting layer; a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula RNH3MX3 or HC(NH2)2MX3; and an electron transporting layer. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. A product of a resistivity ρ and a thickness t of the hole transporting layer satisfies ρt≧0.1 μQ·m2. The transparent electroconductive layer is in contact with the hole transporting layer.

公开(公告)号：US11996491B2

公开(公告)日：2024-05-28

申请号：US17481252

申请日：2021-09-21

Applicant: KANEKA CORPORATION

Inventor： Hisashi Uzu ,  Gensuke Koizumi

IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/0475 ,  H01L31/0747 ,  H10K30/80

CPC classification number: H01L31/0725 ,  H01L31/022441 ,  H01L31/0475 ,  H01L31/0747 ,  H10K30/80

Abstract: A solar cell module comprises cell groups each containing solar cells, and each solar cell includes photoelectric converters, N number of which being connected in series, and first, second and third terminals. When the first terminal on one end of a first cell group has a reference potential, the second terminal on the other end of the mth cell group is connected to the first terminal on one end of another cell group, and N number of the third terminals of the mth cell group are respectively connected to N number of the first terminals of an m+1th cell group. The difference in potential between the second terminal on the other end of the mth cell group and the first terminal on one end of the other cell group is 10% or less of the difference in potential between the second and first terminals of the mth cell group.

公开(公告)号：US10672930B2

公开(公告)日：2020-06-02

申请号：US15717294

申请日：2017-09-27

Applicant: Kaneka Corporation

Inventor： Ryota Mishima ,  Masashi Hino ,  Hisashi Uzu ,  Tomomi Meguro

IPC: H01L31/0747 ,  H01L27/30 ,  H01L51/42 ,  H01G9/20 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/028

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

公开(公告)号：US10177705B2

公开(公告)日：2019-01-08

申请号：US15325503

申请日：2015-07-10

Applicant: KANEKA CORPORATION

Inventor： Hisashi Uzu ,  Mitsuru Ichikawa ,  Masashi Hino ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H02S40/20 ,  H01G9/20 ,  G02B6/00 ,  H01L51/44 ,  H01L27/30 ,  H02S40/22

Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.

公开(公告)号：US20180019360A1

公开(公告)日：2018-01-18

申请号：US15717294

申请日：2017-09-27

Applicant: Kaneka Corporation

Inventor： Ryota Mishima ,  Masashi Hino ,  Hisashi Uzu ,  Tomomi Meguro

IPC: H01L31/0747 ,  H01L31/0224 ,  H01G9/20 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0236

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

公开(公告)号：US09634176B2

公开(公告)日：2017-04-25

申请号：US14893716

申请日：2014-04-01

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi ,  Masanori Kanematsu ,  Hisashi Uzu

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0445 ,  H01L31/048

CPC classification number: H01L31/1804 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/0747 ,  H01L31/186 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a crystalline silicon-based solar cell having a photoelectric conversion section includes a silicon-based layer of an opposite conductivity-type on a first principal surface side of a crystalline silicon substrate of a first conductivity-type, and a collecting electrode formed by an electroplating method on a first principal surface of the photoelectric conversion section. By applying laser light from a first or second principal surface side of the photoelectric conversion section, an insulation-processed region his formed where a short-circuit between the first principal surface and a second principal surface of the photoelectric conversion section is eliminated. On the collecting electrode and/or the insulation-processed region, a protecting layer s formed for preventing diffusion of a metal contained in the collecting electrode into the substrate. After the protecting layer is formed, the insulation-processed region is heated to eliminate leakage between the substrate and the silicon-based layer.

公开(公告)号：US09484485B2

公开(公告)日：2016-11-01

申请号：US14893494

申请日：2014-05-27

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi ,  Hisashi Uzu

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/048

CPC classification number: H01L31/1884 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a solar cell including a photoelectric conversion section having a first principal surface and a second principal surface, and a collecting electrode formed on the first principal surface of photoelectric conversion section. The photoelectric conversion section includes a semiconductor-stacked portion including a semiconductor junction, a first electrode layer which is a transparent electrode layer formed on the first principal surface side of the semiconductor-stacked portion, and a second electrode layer formed on the second principal surface side of the semiconductor-stacked portion. The collecting electrode includes a first electroconductive layer and a second electroconductive layer. In the manufacturing method, an insulating layer is formed on the first electrode layer, and the electrode layer exposed to the surface of the insulating layer-non-formed region is removed to eliminate a short circuit between the first and second electrode layers. The second electroconductive layer is formed by plating.

Abstract translation: 提供一种太阳能电池，其包括具有第一主表面和第二主表面的光电转换部分，以及形成在光电转换部分的第一主表面上的集电极。 光电转换部包括半导体层叠部，其包含半导体结，形成在半导体层叠部的第一主面侧的透明电极层的第一电极层和形成在第二主面上的第二电极层 侧的半导体层叠部。 集电极包括第一导电层和第二导电层。 在制造方法中，在第一电极层上形成绝缘层，并且去除暴露于绝缘层未形成区域的表面的电极层，以消除第一和第二电极层之间的短路。 第二导电层通过电镀形成。