-
公开(公告)号：US10529882B2
公开(公告)日：2020-01-07
申请号：US16152608
申请日：2018-10-05
Applicant: KANEKA CORPORATION
Inventor： Hisashi Uzu , Mitsuru Ichikawa , Toru Terashita , Kenji Yamamoto
IPC: H01L21/00 , H01L31/0725 , H01L31/0224 , H01L31/078 , H01L31/0368
Abstract: A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.
-
公开(公告)号：US20170155358A1
公开(公告)日：2017-06-01
申请号：US15325503
申请日：2015-07-10
Applicant: KANEKA CORPORATION
Inventor： Hisashi Uzu , Mitsuru Ichikawa , Masashi Hino , Tomomi Meguro , Kenji Yamamoto
CPC classification number: H02S40/20 , G02B6/00 , H01G9/2009 , H01L27/301 , H01L51/447 , H02S40/22 , Y02E10/52 , Y02E10/549
Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.
-
公开(公告)号：US20170110620A1
公开(公告)日：2017-04-20
申请号：US15126995
申请日：2015-03-25
Applicant: KANEKA CORPORATION
Inventor： Masashi Hino , Mitsuru Ichikawa , Tomomi Meguro
IPC: H01L31/18 , H01L31/0392
CPC classification number: H01L31/18 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/0749 , H01L31/1892 , H01L31/1896 , Y02E10/541 , Y02P70/521
Abstract: A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.
-
Patent Agency Ranking
公开(公告)号：US20190044016A1
公开(公告)日：2019-02-07
申请号：US16152608
申请日：2018-10-05
Applicant: KANEKA CORPORATION
Inventor： Hisashi Uzu , Mitsuru Ichikawa , Toru Terashita , Kenji Yamamoto
IPC: H01L31/0725 , H01L31/0368 , H01L31/0224
Abstract: A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.
-
公开(公告)号：US09893228B2
公开(公告)日：2018-02-13
申请号：US15126995
申请日：2015-03-25
Applicant: KANEKA CORPORATION
Inventor： Masashi Hino , Mitsuru Ichikawa , Tomomi Meguro
IPC: H01L31/18 , H01L31/0392
CPC classification number: H01L31/18 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/0749 , H01L31/1892 , H01L31/1896 , Y02E10/541 , Y02P70/521
Abstract: A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.
-
公开(公告)号：US10177705B2
公开(公告)日：2019-01-08
申请号：US15325503
申请日：2015-07-10
Applicant: KANEKA CORPORATION
Inventor： Hisashi Uzu , Mitsuru Ichikawa , Masashi Hino , Tomomi Meguro , Kenji Yamamoto
Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.
-
公开(公告)号：US20180226529A1
公开(公告)日：2018-08-09
申请号：US15941818
申请日：2018-03-30
Applicant: Kaneka Corporation
Inventor： Hisashi Uzu , Masashi Hino , Mitsuru Ichikawa , Ryota Mishima , Tomomi Meguro , Kenji Yamamoto
IPC: H01L31/0725 , H01G9/20 , H01L51/44 , H01L31/028
CPC classification number: H01L31/0725 , H01G9/2009 , H01L27/302 , H01L31/028 , H01L51/4246 , H01L51/44 , Y02E10/549 , Y02P70/521
Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.
-
公开(公告)号：US10333016B2
公开(公告)日：2019-06-25
申请号：US15941818
申请日：2018-03-30
Applicant: Kaneka Corporation
Inventor： Hisashi Uzu , Masashi Hino , Mitsuru Ichikawa , Ryota Mishima , Tomomi Meguro , Kenji Yamamoto
IPC: H01L31/0725 , H01G9/20 , H01L51/44 , H01L31/028
Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.013 seconds)
