公开(公告)号：US10333016B2

公开(公告)日：2019-06-25

申请号：US15941818

申请日：2018-03-30

Applicant: Kaneka Corporation

Inventor： Hisashi Uzu ,  Masashi Hino ,  Mitsuru Ichikawa ,  Ryota Mishima ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H01L31/0725 ,  H01G9/20 ,  H01L51/44 ,  H01L31/028

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

公开(公告)号：US20180019361A1

公开(公告)日：2018-01-18

申请号：US15717303

申请日：2017-09-27

Applicant: Kaneka Corporation

Inventor： Ryota Mishima ,  Masashi Hino ,  Hisashi Uzu ,  Tomomi Meguro

IPC: H01L31/0747 ,  H01G9/20 ,  H01G9/00 ,  H01L31/0216 ,  H01L31/0236

CPC classification number: H01L31/0747 ,  H01G9/0029 ,  H01G9/2009 ,  H01L27/301 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/0725 ,  H01L51/422 ,  Y02E10/549 ,  Y02P70/521

Abstract: A photoelectric conversion device includes, arranged in the following order from a light-receiving side: a transparent electroconductive layer; a first photoelectric conversion unit that is a perovskite-type photoelectric conversion unit; and a second photoelectric conversion unit. The first photoelectric conversion unit includes, arranged in the following order from the light-receiving side: a hole transporting layer; a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula RNH3MX3 or HC(NH2)2MX3; and an electron transporting layer. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. A product of a resistivity ρ and a thickness t of the hole transporting layer satisfies ρt≧0.1 μQ·m2. The transparent electroconductive layer is in contact with the hole transporting layer.

公开(公告)号：US20190081189A1

公开(公告)日：2019-03-14

申请号：US16186069

申请日：2018-11-09

Applicant: KANEKA CORPORATION

Inventor： Ryota Mishima ,  Masashi Hino ,  Tomomi Meguro

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/18

Abstract: A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 μm or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface. At least a part of the thin-film photoelectric conversion unit is deposited by a wet method.

公开(公告)号：US09893228B2

公开(公告)日：2018-02-13

申请号：US15126995

申请日：2015-03-25

Applicant: KANEKA CORPORATION

Inventor： Masashi Hino ,  Mitsuru Ichikawa ,  Tomomi Meguro

IPC: H01L31/18 ,  H01L31/0392

CPC classification number: H01L31/18 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.

公开(公告)号：US10944017B2

公开(公告)日：2021-03-09

申请号：US16186069

申请日：2018-11-09

Applicant: KANEKA CORPORATION

Inventor： Ryota Mishima ,  Masashi Hino ,  Tomomi Meguro

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L51/44 ,  H01L31/028 ,  H01L31/18

Abstract: A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 μm or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface. At least a part of the thin-film photoelectric conversion unit is deposited by a wet method.

公开(公告)号：US20170155358A1

公开(公告)日：2017-06-01

申请号：US15325503

申请日：2015-07-10

Applicant: KANEKA CORPORATION

Inventor： Hisashi Uzu ,  Mitsuru Ichikawa ,  Masashi Hino ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H02S40/20 ,  H01G9/20

CPC classification number: H02S40/20 ,  G02B6/00 ,  H01G9/2009 ,  H01L27/301 ,  H01L51/447 ,  H02S40/22 ,  Y02E10/52 ,  Y02E10/549

Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.

公开(公告)号：US20170110620A1

公开(公告)日：2017-04-20

申请号：US15126995

申请日：2015-03-25

Applicant: KANEKA CORPORATION

Inventor： Masashi Hino ,  Mitsuru Ichikawa ,  Tomomi Meguro

IPC: H01L31/18 ,  H01L31/0392

CPC classification number: H01L31/18 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.

公开(公告)号：US20150221802A1

公开(公告)日：2015-08-06

申请号：US14430540

申请日：2013-09-27

Applicant: KANEKA CORPORATION

Inventor： Tomomi Meguro ,  Kenji Yamamoto

IPC: H01L31/077 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0376

CPC classification number: H01L31/077 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/545 ,  Y02E10/548

Abstract: The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.

Abstract translation: 本发明的薄膜光电转换元件包括：以氧化锌为主要成分的透明导电膜; 接触层; 具有p型半导体层，i型半导体层和n型半导体层的光电转换单元; 和背面电极层，依次形成在基板的一个主面上。 接触层从基板侧依次具有本征结晶半导体层和p型结晶半导体层，并且接触层的本征结晶半导体层和透明导电膜彼此接触。 接触层的p型结晶半导体层优选为选自由氧化硅组成的组中的硅合金为主要成分的层; 氮化硅; 和碳化硅。

公开(公告)号：US10672930B2

公开(公告)日：2020-06-02

申请号：US15717294

申请日：2017-09-27

Applicant: Kaneka Corporation

Inventor： Ryota Mishima ,  Masashi Hino ,  Hisashi Uzu ,  Tomomi Meguro

IPC: H01L31/0747 ,  H01L27/30 ,  H01L51/42 ,  H01G9/20 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/028

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

公开(公告)号：US10177705B2

公开(公告)日：2019-01-08

申请号：US15325503

申请日：2015-07-10

Applicant: KANEKA CORPORATION

Inventor： Hisashi Uzu ,  Mitsuru Ichikawa ,  Masashi Hino ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H02S40/20 ,  H01G9/20 ,  G02B6/00 ,  H01L51/44 ,  H01L27/30 ,  H02S40/22

Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.