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    ACCELEROMETER ELEMENT FOR DETECTING OUT-OF-PLANE ACCELERATIONS
    12.
    发明公开
    ACCELEROMETER ELEMENT FOR DETECTING OUT-OF-PLANE ACCELERATIONS 审中-公开

    公开(公告)号：US20230305036A1

    公开(公告)日：2023-09-28

    申请号：US18189577

    申请日：2023-03-24

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Altti TORKKELI ,  Matti LIUKKU ,  Petteri KILPINEN

    IPC: G01P15/125 ,  G01P15/08

    CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0862

    Abstract: An accelerometer element is provided that includes a body, a mass and a spring system that couples the mass to the body. The spring system configures the mass to rotate reciprocally about a rotary axis. The mass includes a volume of a bulk material that forms two essentially closed surfaces and incorporates between those two closed surfaces one or more weight elements, each of which is formed of a substance whose weight per unit volume is different from weight per unit volume of the bulk material. The weight elements are incorporated in the mass so that the centre of gravity of the mass is offset from the rotary axis in an in-plane direction and the centre of gravity of the mass and the rotary axis are at the same level within the mass in the out-of-plane direction.

    MEMS STRUCTURE INCLUDING A CAP WITH A VIA
    13.
    发明申请
    MEMS STRUCTURE INCLUDING A CAP WITH A VIA 审中-公开

    公开(公告)号：US20200283292A1

    公开(公告)日：2020-09-10

    申请号：US16807783

    申请日：2020-03-03

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Altti TORKKELI ,  Antti IIHOLA

    IPC: B81C1/00 ,  G02B26/08

    Abstract: A microelectromechanical structure including a first wafer structure attached by bonding to a second wafer structure. The first wafer structure includes a build part of silicon wafer material, a through via, and an isolation structure separating the through via from the build part. The through via extends between a first electrical contact and a second electrical contact through the first wafer structure in a first direction. The first electrical contact of the first wafer structure is accessible externally and the second electrical contact of the first wafer structure connects to an internal electrical contact on the second wafer structure. In the first direction, the extent of the isolation structure includes a hollow section and a via fill section where the isolation structure is filled with solid electrically insulating material. enables considerable increase of gap height in MEMS structures.

    SCANNING MEMS REFLECTOR SYSTEM
    14.
    发明申请
    SCANNING MEMS REFLECTOR SYSTEM 审中-公开

    公开(公告)号：US20180059406A1

    公开(公告)日：2018-03-01

    申请号：US15682949

    申请日：2017-08-22

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Altti TORKKELI

    IPC: G02B26/10 ,  G02B26/08 ,  G01S7/481

    CPC classification number: G02B26/105 ,  G01S7/4817 ,  G02B26/0858 ,  G02B26/101

    Abstract: The actuation range obtained with a bending piezoelectric actuator in MEMS mirror system is mechanically amplified by fixing the moving end of the actuator to a suspender which suspends a reflector from a frame. The fixing point lies somewhere between the two ends of the suspender. The actuator and the suspender together form an actuator unit with a greater actuation range than one actuator can obtain by itself. In one embodiment, the suspender is a rigid lever. In another embodiment, the suspender is another bending actuator so that an additional increase in the actuation range can be obtained from the actuating movement of the second actuator.

    METHOD OF MANUFACTURING A MEMS STRUCTURE
    16.
    发明申请
    METHOD OF MANUFACTURING A MEMS STRUCTURE 有权
    制造MEMS结构的方法

    公开(公告)号：US20150336793A1

    公开(公告)日：2015-11-26

    申请号：US14712987

    申请日：2015-05-15

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Altti TORKKELI ,  Antti IIHOLA

    IPC: B81C1/00

    CPC classification number: B81C1/00412 ,  B81C1/00373 ,  B81C1/00396 ,  B81C1/00404 ,  B81C1/00531 ,  B81C1/00611

    Abstract: A method for creating MEMS structures comprises depositing and patterning a first mask on a wafer in order to define desired first areas to be etched in a first trench etching and desired second areas to be etched in a second trench etching. A first intermediate mask is deposited and patterned on top of the first mask. Recession trenches are etched on parts of the wafer. After the first intermediate mask is removed, first trenches are etched with further etching the recession trenches. The first trenches and the recession trenches are filled with a deposit layer. Part of the deposit layer is removed on second areas. A remainder is left on certain areas, to function as a second mask. A third mask is deposited. The third mask defines the final structure. The parts of the wafer on the second areas are etched in the second trench etching. The masks are then removed.

    Abstract translation: 一种用于创建MEMS结构的方法包括在晶片上沉积和图案化第一掩模，以便在第一沟槽蚀刻中定义要蚀刻的期望的第一区域和在第二沟槽蚀刻中要蚀刻的期望的第二区域。 在第一掩模的顶部上沉积并图案化第一中间掩模。 在晶片的部分上刻蚀了衰退沟槽。 在去除第一中间掩模之后，第一沟槽被蚀刻，进一步蚀刻凹陷沟槽。 第一个沟渠和经济衰退的沟槽上都铺满了一层沉积层。 部分沉积层在第二个区域被去除。 剩余部分留在某些区域，用作第二个掩模。 存放第三个掩模。 第三个掩码定义了最终结构。 在第二沟槽蚀刻中蚀刻第二区域上的晶片的部分。 然后取下面具。

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