中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

16 records (took 0.013 seconds)

    MULTI-LEVEL MICROMECHANICAL STRUCTURE
    1.
    发明申请
    MULTI-LEVEL MICROMECHANICAL STRUCTURE 有权
    多层微观结构

    公开(公告)号：US20160332864A1

    公开(公告)日：2016-11-17

    申请号：US15147197

    申请日：2016-05-05

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Antti IIHOLA ,  Altti TORKKELI ,  Ville-Pekka RYTKÖNEN ,  Matti LIUKKU

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0021 ,  B81B3/0094 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C1/00357 ,  B81C2201/0112 ,  B81C2201/0132

    Abstract: The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

    Abstract translation: 微机械装置技术领域本发明涉及包括仅包含均质硅材料的多层微机械结构的微机械装置。 装置层至少包括一个转子和至少两个定子。 转子和至少两个定子中的至少一些至少部分地凹陷到来自装置层的第一表面的至少两个不同的凹陷深度，并且至少一些转子和至少两个定子至少部分地凹入 与器件层的第二表面的至少两个不同的凹陷深度。

    MEMS REFLECTOR WITH CENTER SUPPORT
    4.
    发明申请
    MEMS REFLECTOR WITH CENTER SUPPORT 审中-公开

    公开(公告)号：US20190146211A1

    公开(公告)日：2019-05-16

    申请号：US16187064

    申请日：2018-11-12

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Altti TORKKELI ,  Matti LIUKKU

    IPC: G02B26/08 ,  G02B26/10

    Abstract: A scanning microelectromechanical reflector system comprising a reflector with a reflector body, a first cavity vertically aligned with the reflector body above the device plane and a second cavity vertically aligned with the reflector body below the device plane. The reflector also comprises a central attachment point located within a central opening in the reflector body. One or more flexures extend from the sidewalls of the central opening to the central attachment point. The flexures allow the central attachment point to remain stationary in the device plane when actuator units tilt the reflector body out of the device plane. The reflector system comprises a central support structure which extends through the cavity to the central attachment point of the reflector.

    MANUFACTURING METHOD OF A MULTI-LEVEL MICROMECHANICAL STRUCTURE
    6.
    发明申请
    MANUFACTURING METHOD OF A MULTI-LEVEL MICROMECHANICAL STRUCTURE 有权
    多层微观结构的制造方法

    公开(公告)号：US20160332872A1

    公开(公告)日：2016-11-17

    申请号：US15147233

    申请日：2016-05-05

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Antti IIHOLA ,  Altti TORKKELI

    IPC: B81C1/00

    CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/033 ,  B81B2203/0136 ,  B81C1/00603 ,  G01C19/56 ,  G01C19/5733 ,  G01C19/5769

    Abstract: A method for manufacturing a micromechanical device layer is performed on a device wafer comprising a single layer of homogenous material. The method comprises patterning a first mask on a first face of the device wafer, the first mask patterning at least lateral dimensions of comb structures and outlines of large device structures. First trenches are etched, the first trenches defining the lateral dimensions of the at least comb structures and outlines of large device structures in a single deep etching process. Recession etching may be used on one or two faces of the device wafer for creating structures at least partially recessed below the respective surfaces of the device wafer. A double mask etching process may be used on one or two faces of the device wafer for creating structures at least partially recessed to mutually varying depths from the respective face of the device wafer.

    Abstract translation: 在包括单层均质材料的器件晶片上进行微机械器件层的制造方法。 该方法包括在器件晶片的第一面上构图第一掩模，第一掩模至少构图梳状结构的横向尺寸和大型器件结构的轮廓。 蚀刻第一沟槽，第一沟槽在单个深刻蚀工艺中限定至少梳状结构的横向尺寸和大型器件结构的轮廓。 衰减蚀刻可以用在器件晶片的一个或两个面上，用于产生至少部分地凹入器件晶片的相应表面下方的结构。 可以在器件晶片的一个或两个面上使用双掩模蚀刻工艺，用于产生至少部分地凹陷到从器件晶片的相应面相互变化的深度的结构。

    METHOD FOR STRUCTURAL LAYER FABRICATION IN MICROMECHANICAL DEVICES
    8.
    发明公开
    METHOD FOR STRUCTURAL LAYER FABRICATION IN MICROMECHANICAL DEVICES 审中-公开

    公开(公告)号：US20230192480A1

    公开(公告)日：2023-06-22

    申请号：US18066755

    申请日：2022-12-15

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Altti TORKKELI ,  Hidetoshi FUJII

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00968 ,  B81B3/001 ,  B81C2201/0133 ,  B81C2201/0178

    Abstract: A method for manufacturing a structural layer in a silicon wafer is provide. The silicon wafer has at least two areas vertically recessed to at least two recess depths, with the first recess depth being greater than the second recess depth. The method includes forming a silicon dioxide pattern, a mask layer and a silicon dioxide pad layer, etching the structural layer in a main LOCOS oxidation process, and removing the formed layers exposing the recessed structural layer. The manufactured structural layer has a bump structure with the recess depth smaller than the second recess depth, and the recessed area has no edge steps.

    A MEMS REFLECTOR SYSTEM
    9.
    发明申请
    A MEMS REFLECTOR SYSTEM 审中-公开

    公开(公告)号：US20190064508A1

    公开(公告)日：2019-02-28

    申请号：US16043359

    申请日：2018-07-24

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Altti TORKKELI ,  Matti LIUKKU

    IPC: G02B26/08 ,  G02B26/10

    Abstract: A compact and robust microelectromechanical reflector system that comprises a support, a reflector, a peripheral edge of the reflector including edge points, and suspenders including piezoelectric actuators and suspending the reflector from the support. Two pairs of suspenders are fixed from two fixing points to the support such that in each pair of suspenders, first ends of a pair of suspenders are fixed to a fixing point common to the pair. A first axis of rotation is aligned to a line running though the two fixing points, and divides the reflector to a first reflector part and a second reflector part. In each pair of suspenders, a second end of one suspender is coupled to the first reflector part and a second end of the other suspender is coupled to the second reflector part.

    METHOD OF MANUFACTURING A MEMS STRUCTURE AND USE OF THE METHOD
    10.
    发明申请
    METHOD OF MANUFACTURING A MEMS STRUCTURE AND USE OF THE METHOD 有权
    制造MEMS结构的方法和方法的使用

    公开(公告)号：US20150336794A1

    公开(公告)日：2015-11-26

    申请号：US14706095

    申请日：2015-05-07

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Altti TORKKELI

    IPC: B81C1/00

    CPC classification number: B81C1/00412 ,  B81C1/00373 ,  B81C1/00396 ,  B81C1/00404 ,  B81C1/00531 ,  B81C1/00611

    Abstract: A method creates MEMS structures by selectively etching a silicon wafer that is patterned by using a masking layer. The method comprises depositing and patterning a first mask on a silicon wafer to define desired first areas on the wafer to be etched. First trenches are etched on parts of the wafer not covered by the first mask. The first trenches are filled with a deposit layer. A part of the deposit layer is removed on desired second areas to be etched and a remainder is left on areas to function as a second mask to define final structures. Parts of the wafer on the desired second areas is etched, and the second mask is removed. A gyroscope or accelerator can be manufactured by dimensioning the structures.

    Abstract translation: 一种方法通过选择性地蚀刻通过使用掩模层图案化的硅晶片来产生MEMS结构。 该方法包括在硅晶片上沉积和图案化第一掩模以限定待蚀刻晶片上的期望的第一区域。 第一沟槽被蚀刻在未被第一掩模覆盖的晶片的部分上。 第一个沟槽中充满了沉积层。 在要蚀刻的期望的第二区域上去除一部分沉积层，并且剩余部分留在用作第二掩模的区域上以限定最终结构。 在期望的第二区域上的晶片的部分被蚀刻，并且去除第二掩模。 可以通过对结构进行尺寸制作陀螺仪或加速器。

Patent Agency Ranking