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公开(公告)号：US09411177B2
公开(公告)日：2016-08-09
申请号：US14742431
申请日：2015-06-17
Applicant: Oracle International Corporation
Inventor： John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
IPC: G02F1/025 , G02B6/12 , H01L31/0232 , G02F1/00 , G02F1/015
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
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公开(公告)号：US20160204578A1
公开(公告)日：2016-07-14
申请号：US14062624
申请日：2013-10-24
Applicant: Oracle International Corporation
Inventor： Guoliang Li , Ashok V. Krishnamoorthy , Xuezhe Zheng , Ying L. Luo
CPC classification number: H01S5/142 , H01S5/021 , H01S5/0261 , H01S5/0265 , H01S5/0287 , H01S5/1032 , H01S5/12
Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier, with a semiconductor other than silicon, which provides a gain medium. In addition, a photonic chip, optically coupled to the semiconductor optical amplifier, includes: an optical waveguide that conveys the optical signal; and a pair of ring-resonator modulators that modulate the optical signal. Furthermore, the pair of ring-resonator modulators is included within an optical cavity in the optical source. For example, the optical cavity may be defined by a reflective coating on one edge of the semiconductor optical amplifier and a reflector on one end of the optical waveguide. Alternatively, the optical cavity may be defined by reflectors on ends of the optical waveguide.
Abstract translation: 描述光源。 该光源包括具有提供增益介质的硅以外的半导体的半导体光放大器。 此外，光耦合到半导体光放大器的光子芯片包括：传送光信号的光波导; 以及一对调制光信号的环形谐振器调制器。 此外，一对环形谐振器调制器被包括在光源中的光腔内。 例如，光腔可以由半导体光放大器的一个边缘上的反射涂层和光波导的一端上的反射器来限定。 或者，光学腔可由光波导端部上的反射器限定。
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公开(公告)号：US20150293383A1
公开(公告)日：2015-10-15
申请号：US14252607
申请日：2014-04-14
Applicant: Oracle International Corporation
Inventor： John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
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公开(公告)号：US08988770B2
公开(公告)日：2015-03-24
申请号：US13831541
申请日：2013-03-14
Applicant: Oracle International Corporation
Inventor： Xuezhe Zheng , Ashok V. Krishnamoorthy , Ivan Shubin , John E. Cunningham , Guoliang Li , Ying L. Luo
CPC classification number: H01S5/1028 , H01S5/02252 , H01S5/1025 , H01S5/141 , H01S5/142 , H01S5/18 , H01S5/4087
Abstract: A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source.
Abstract translation: 描述了提供具有波长的光信号的混合光源。 该混合光源包括与半导体反射器（例如蚀刻硅镜）对准的边缘耦合光放大器（例如III-V半导体光放大器）。 半导体反射器在大致垂直于光放大器的平面的方向上有效地耦合（即，具有低光损耗）的光从光放大器中出射。 制造在绝缘体上硅芯片上的对应的光耦合器（例如衍射光栅或反射镜）有效地将光耦合到亚微米上绝缘体上的光波导中。 绝缘体上的光波导将光耦合到附加的光子元件（包括反射器）以完成混合光源。
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公开(公告)号：US20140321803A1
公开(公告)日：2014-10-30
申请号：US14047910
申请日：2013-10-07
Applicant: Oracle International Corporation
Inventor： Hiren D. Thacker , Frankie Y. Liu , Robert David Hopkins, II , Jon Lexau , Xuezhe Zheng , Guoliang Li , Ivan Shubin , Ronald Ho , John E. Cunningham , Ashok V. Krishnamoorthy
IPC: G02B6/12
CPC classification number: G02B6/4274 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/72 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0652 , H01L25/0655 , H01L2224/0401 , H01L2224/13147 , H01L2224/1403 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/72 , H01L2224/73204 , H01L2224/73253 , H01L2224/81203 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06534 , H01L2225/06589 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/37001 , H05K3/36 , H05K2201/10484 , H01L2924/00
Abstract: A chip package includes an optical integrated circuit (such as a hybrid integrated circuit) and an integrated circuit that are adjacent to each in the chip package. The integrated circuit includes electrical circuits, such as memory or a processor, and the optical integrated circuit communicates optical signals with very high bandwidth. Moreover, a front surface of the integrated circuit is electrically coupled to a front surface of the optical integrated circuit by a top surface of the interposer, where the top surface faces the front surface of the integrated circuit and the front surface of the optical integrated circuit. Furthermore, the integrated circuit and the optical integrated circuit may be on a same side of the interposer. By integrating the optical integrated circuit and the integrated circuit in close proximity, the chip package may facilitate improved performance compared to chip packages with electrical interconnects.
Abstract translation: 芯片封装包括与芯片封装中的每一个相邻的光学集成电路（例如混合集成电路）和集成电路。 集成电路包括诸如存储器或处理器的电路，并且光学集成电路传送具有非常高带宽的光信号。 此外，集成电路的前表面通过插入件的顶表面电耦合到光集成电路的前表面，其中顶表面面向集成电路的前表面和光集成电路的前表面 。 此外，集成电路和光集成电路可以在插入器的同一侧上。 通过将光集成电路和集成电路集成在一起，与具有电互连的芯片封装相比，芯片封装可以有助于提高性能。
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Patent Agency Ranking
16.发明申请公开(公告)号：US20160266320A1
公开(公告)日：2016-09-15
申请号：US15163591
申请日：2016-05-24
Applicant: Oracle International Corporation
Inventor： Guoliang Li , Xuezhe Zheng , Ying L. Luo , Ashok V. Krishnamoorthy
CPC classification number: G02B6/29389 , G02B6/12007 , G02B6/125 , G02B6/293 , G02B6/29331 , G02B6/29335 , G02B6/29338 , G02B6/29343 , G02B6/29344 , G02B6/29352 , G02B6/29395 , G02F1/0147 , G02F1/225 , G02F1/2257 , G02F2001/212 , G02F2001/217 , H01S5/02252 , H01S5/0265 , H01S5/141 , H01S5/18 , H01S5/2027 , H01S5/3013 , H01S5/50
Abstract: An optical device includes an optical reflector based on a coupled-loopback optical waveguide. In particular, an input port, an output port and an optical loop in arms of the optical reflector are optically coupled to a directional coupler. The directional coupler evanescently couples an optical signal between the arms. For example, the directional coupler may include: a multimode interference coupler and/or a Mach-Zehnder Interferometer (MZI). Moreover, destructive interference during the evanescent coupling determines the reflection and transmission power coefficients of the optical reflector.
Abstract translation: 光学装置包括基于耦合回环光波导的光反射器。 特别地，光反射器的臂中的输入端口，输出端口和光环路光耦合到定向耦合器。 定向耦合器消失在臂之间耦合光信号。 例如，定向耦合器可以包括：多模干涉耦合器和/或马赫 - 曾德干涉仪（MZI）。 此外，ev逝耦合期间的破坏性干扰决定了光反射器的反射和发射功率系数。
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公开(公告)号：US20150362764A1
公开(公告)日：2015-12-17
申请号：US14742431
申请日：2015-06-17
Applicant: Oracle International Corporation
Inventor： John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
Abstract translation: 集成光学器件包括设置在光波导的顶表面上的电吸收调制器。 电吸收调制器包括设置在n型掺杂硅侧壁和p型掺杂硅侧壁之间的空腔中的锗。 通过在n型掺杂硅侧壁和p型掺杂硅侧壁之间施加电压，可以在光波导的平面中产生电场，但是垂直于光信号的传播方向。 该电场移动锗的带隙，从而调制光信号。
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公开(公告)号：US20150277053A1
公开(公告)日：2015-10-01
申请号：US14203876
申请日：2014-03-11
Applicant: Oracle International Corporation
Inventor： Xuezhe Zheng , Guoliang Li , Ying L. Luo , Ashok V. Krishnamoorthy
IPC: G02B6/293
CPC classification number: G02B6/29341 , G02B6/2852 , G02F1/3132 , H04J14/00
Abstract: In an optical device, a ring resonator, having a resonance wavelength, optically couples an optical signal that includes a wavelength from an input optical waveguide to an output optical waveguide. A monitoring mechanism in the optical device, which is optically coupled to the output optical waveguide, monitors an output optical signal on the output optical waveguide. For example, the monitoring mechanism may dither a temperature of the ring resonator at a frequency using a heater, and the output optical signal may be monitored by determining amplitude and phase information of the output optical signal at the frequency and twice the frequency. Moreover, control logic in the optical device adjusts the resonance wavelength based on the monitored output optical signal, where the adjustment is made without monitoring an input optical signal on the input optical waveguide.
Abstract translation: 在光学装置中，具有谐振波长的环形谐振器将包括来自输入光波导的波长的光信号光耦合到输出光波导。 光学装置中的光耦合到输出光波导的监视机构监视输出光波导上的输出光信号。 例如，监视机构可以使用加热器将环形谐振器的温度以一定的频率进行抖动，并且可以通过确定频率和频率两倍的输出光信号的幅度和相位信息来监视输出光信号。 此外，光学装置中的控制逻辑基于所监视的输出光信号来调节谐振波长，其中在不监视输入光波导上的输入光信号的情况下进行调整。
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公开(公告)号：US09142698B1
公开(公告)日：2015-09-22
申请号：US14252607
申请日：2014-04-14
Applicant: Oracle International Corporation
Inventor： John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
IPC: H01L31/18 , H01L31/0232
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
Abstract translation: 集成光学器件包括设置在光波导的顶表面上的电吸收调制器。 电吸收调制器包括设置在n型掺杂硅侧壁和p型掺杂硅侧壁之间的空腔中的锗。 通过在n型掺杂硅侧壁和p型掺杂硅侧壁之间施加电压，可以在光波导的平面中产生电场，但是垂直于光信号的传播方向。 该电场移动锗的带隙，从而调制光信号。
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公开(公告)号：US20150086219A1
公开(公告)日：2015-03-26
申请号：US14036964
申请日：2013-09-25
Applicant: Oracle International Corporation
Inventor： Guoliang Li , Ashok V. Krishnamoorthy , Xuezhe Zheng , Ying L. Luo , John E. Cunningham
CPC classification number: G02F1/2257 , G02B6/1225 , G02F2001/212 , G02F2202/32
Abstract: A photonic integrated circuit (PIC) is described. This PIC includes a semiconductor-barrier layer-semiconductor diode in an optical waveguide that conveys an optical signal, where the barrier layer is an oxide or a high-k material. Moreover, semiconductor layers in the semiconductor-barrier layer-semiconductor diode may include geometric features (such as a periodic pattern of holes or trenches) that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features. The optical waveguide is included in an optical modulator, such as a Mach-Zehnder interferometer (MZI).
Abstract translation: 描述了一种光子集成电路（PIC）。 该PIC包括传输光信号的光波导中的半导体阻挡层 - 半导体二极管，其中阻挡层是氧化物或高k材料。 此外，半导体阻挡层 - 半导体二极管中的半导体层可以包括几何特征（例如空穴或沟槽的周期性图案），其产生具有低于组的光速的光子晶体光子晶体光波导 第一半导体层和第二半导体层中的光的速度没有几何特征。 光波导包括在诸如Mach-Zehnder干涉仪（MZI）的光学调制器中。
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