公开(公告)号：US20110000896A1

公开(公告)日：2011-01-06

申请号：US12496080

申请日：2009-07-01

Applicant: Kamal Hadidi ,  Rajesh Dorai ,  Bernard G. Lindsay ,  Vikram Singh ,  George D. Papasouliotis

Inventor： Kamal Hadidi ,  Rajesh Dorai ,  Bernard G. Lindsay ,  Vikram Singh ,  George D. Papasouliotis

IPC: H05H1/34 ,  H01L21/465

CPC classification number: C23C14/48 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.

Abstract translation: 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

公开(公告)号：US07667208B2

公开(公告)日：2010-02-23

申请号：US11550140

申请日：2006-10-17

Applicant: Rajesh Dorai

Inventor： Rajesh Dorai

IPC: H01J37/244 ,  H01J37/252

CPC classification number: H01J37/3266 ,  H01J37/32412 ,  H01J2237/0045

Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

Abstract translation: 公开了一种限制二次电子在晶片上的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。 该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。 该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。 该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。

公开(公告)号：US07655922B2

公开(公告)日：2010-02-02

申请号：US11568000

申请日：2006-12-07

Applicant: Donna L. Smatlak ,  Gordon C. Angel ,  Rajesh Dorai

Inventor： Donna L. Smatlak ,  Gordon C. Angel ,  Rajesh Dorai

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055 ,  H01J2237/152 ,  H01J2237/31701

Abstract: Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.

Abstract translation: 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

公开(公告)号：US20080135775A1

公开(公告)日：2008-06-12

申请号：US11568000

申请日：2006-12-07

Applicant: Donna L. Smatlak ,  Gordon C. Angel ,  Rajesh Dorai

Inventor： Donna L. Smatlak ,  Gordon C. Angel ,  Rajesh Dorai

IPC: H01J1/50

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055 ,  H01J2237/152 ,  H01J2237/31701

Abstract: Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.

Abstract translation: 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

公开(公告)号：US08664561B2

公开(公告)日：2014-03-04

申请号：US12496080

申请日：2009-07-01

Applicant: Kamal Hadidi ,  Rajesh Dorai ,  Bernard G. Lindsay ,  Vikram Singh ,  George D. Papasouliotis

Inventor： Kamal Hadidi ,  Rajesh Dorai ,  Bernard G. Lindsay ,  Vikram Singh ,  George D. Papasouliotis

IPC: B23K10/00

CPC classification number: C23C14/48 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.

Abstract translation: 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

公开(公告)号：US08003498B2

公开(公告)日：2011-08-23

申请号：US12269344

申请日：2008-11-12

Applicant: Jonathan G. England ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

Inventor： Jonathan G. England ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

Abstract translation: 公开了用于处理基板的方法的几个实例。 在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体， 邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

公开(公告)号：US07812321B2

公开(公告)日：2010-10-12

申请号：US12137225

申请日：2008-06-11

Applicant: Peter Kurunczi ,  Rajesh Dorai ,  Costel Biloiu ,  Wilhelm Platow

Inventor： Peter Kurunczi ,  Rajesh Dorai ,  Costel Biloiu ,  Wilhelm Platow

IPC: H01J27/00 ,  H01J27/24 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/304

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract translation: 公开了提供多模离子源的技术。 在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

公开(公告)号：US20090124065A1

公开(公告)日：2009-05-14

申请号：US12269327

申请日：2008-11-12

Applicant: Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

Inventor： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC: H01L21/20

CPC classification number: H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

Abstract translation: 公开了用于处理衬底的方法的几个实例。 在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

公开(公告)号：US20090124064A1

公开(公告)日：2009-05-14

申请号：US12269276

申请日：2008-11-12

Applicant: Jonathan G. ENGLAND ,  Rajesh Dorai ,  Ludovic Godet

Inventor： Jonathan G. ENGLAND ,  Rajesh Dorai ,  Ludovic Godet

IPC: H01L21/20

CPC classification number: H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

公开(公告)号：US20080317968A1

公开(公告)日：2008-12-25

申请号：US12200178

申请日：2008-08-28

Applicant: Vikram SINGH ,  James Steve Buff ,  Rajesh Dorai

Inventor： Vikram SINGH ,  James Steve Buff ,  Rajesh Dorai

IPC: C23C14/00

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01J37/32009 ,  H01J37/32752

Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.

Abstract translation: 等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。 光栅位于腔室中。 用于支撑靶的压板位于腔室中。 光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。